AM7321P analog power preliminary publication order number: ds-am7321_b 1 these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. p-channel 20-v (d-s) mosfet ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe dfn3x3-8pp saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature v ds (v) r ds(on) m( ) i d (a) 14 @ v gs = -4.5v -13 19 @ v gs = -2.5v -12 product summary -20 symbol maximum units v ds -20 v gs 8 t a =25 o c -13 t a =70 o c -11 i dm 50 i s -2.1 a t a =25 o c 3.5 t a =70 o c 2.0 t j , t stg -55 to 150 o c power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a ss s g 12 3 4 dfn3x3-8pp top view dd d d 87 6 5 s d g p-channel mosfet symbol maximum units t <= 10 sec 35 o c/w steady state 81 o c/w thermal resistance ratings parameter maximum junction-to-ambient a r ja
AM7321P analog power preliminary publication order number: ds-am7321_b 2 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without fu rther notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its produ cts for any particular purpose, nor does apl assume any liability arising out of the application or use of any product or circuit, and specifically dis claims any and all liability, including without lim itation special, consequential or incidental damages. ?typical? parameters which may be provide d in apl data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operati ng parameters, including ?typicals? must be validat ed for each customer application by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in sy stems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the apl product could create a situ ation where personal injury or death may occur. should buyer purchase or use apl products for any s uch unintended or unauthorized application, buyer s hall indemnify and hold apl and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, da mages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with suc h unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = -250 ua -1 gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = -16 v, v gs = 0 v -1 v ds = -16 v, v gs = 0 v, t j = 55 o c -5 on-state drain current a i d(on) v ds = -5 v, v gs = -10 v -50 a v gs = -4.5 v, i d = -11.5 a 14 v gs = -2.5 v, i d = -9.3 a 19 forward tranconductance a g fs v ds = -15 v, i d = -11.5 a 29 s diode forward voltage v sd i s = 2.5 a, v gs = 0 v -0.8 v total gate charge q g 25 gate-source charge q gs 11 gate-drain charge q gd 17 input capacitance c iss 2300 output capacitance c oss 600 reverse transfer capacitance c rss 300 turn-on delay time t d(on) 15 rise time t r 13 turn-off delay time t d(off) 100 fall-time t f 54 specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static v dd = -15 v, r l = 6 , i d = -1 a, v gen = -10 v limits dynamic b nc ns test conditions drain-source on-resistance a v ds =-15v, v gs =0v, f=1mhz pf r ds(on) unit v m symbol v ds = -15 v, v gs = -4.5 v, i d = -11.5 a parameter
AM7321P analog power preliminary publication order number: ds-am7321_b 3 typical electrical characteristics (p-channel) figure 1. on-region characteristics figure 2. on- resistance variation with drain current and gate voltage figure 4. on-resistance with gate to source voltag e figure 6. body diode forward voltage variation with source current and temperature figure 5. transfer characteristics 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j - juncation t emperature (oc) normalized rd s (on) v gs = 10v i d = 11.5a figure 3. on-resistance variation with temperature -5 0 -4 0 -3 0 -2 0 -1 0 0 -3 -2 -1 0 vds - dra in to s o urc e vo lta ge (v) 2 .5 v 3 v 3 .5 v 4 v t hru 1 0 v 0.01 0.014 0.018 0.022 0.026 0.03 -20 -16 -12 -8 -4 0 i d - drain current (a) r ( ? ) vgs = 10v vgs = 4.5v 0 0 .01 0 .02 0 .03 0 .04 0 .05 0 2 4 6 8 1 0 v gs - gate to source voltage (v) r ( ? ) i d = 1 1.5 a -50 -40 -30 -20 -10 0 -5 -4 -3 -2 -1 0 v gs - gate to source voltage (v) i - drain current (a) 25c 125c -55c 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 vsd - source to drain current (v) is - source current (a) tj = 150c tj = 25c figure 6. body diode forward voltage variation with source current and temperature
AM7321P analog power preliminary publication order number: ds-am7321_b 4 typical electrical characteristics (p-channel) figure 9. maximum safe operating area figure 10. single pulse maximum power dissipation normalized thermal transient junction to ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration (s) p dm t1 t2 1. duty cycal d = t1/t2 2. per unit bas e r j a =70c/w 3. t j m - t a = p dm z jc 4. sureface mounted single pulse 0.5 0.2 0.2 0.1 0.05 0.02 figure 11. transient thermal response curve 0 1 0 0 0 2 0 0 0 3 0 0 0 4 0 0 0 -2 0 -1 5 -1 0 -5 0 v ds (v) capacit ance (pf) ciss coss crss figure 8. capacitance characteristics 0 5 10 15 20 25 30 35 40 45 50 0.01 0.1 1 10 100 1000 pulse t ime (s) power (w) -0.4 -0.2 0 0.2 0.4 0.6 0.8 -50 -25 0 25 50 75 100 125 150 t j - juncation t emperature (oc) v variance (v) figure 7. gate charge characteristics -5 -4 -3 -2 -1 0 0 8 16 24 32 40 q g, charge (nc) vgs gate-source voltage ( v ) i d =11.5a
AM7321P analog power preliminary publication order number: ds-am7321_b 5 package information
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