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| bas19 ... bas21 bas19 ... bas21 fast switching surface mount si-planar diodes schnelle si-planar-dioden fr die oberfl?chenmontage version 2011-07-13 dimensions - ma?e [mm] 1 = a 2 = n.c./frei 3 = c power dissipation C verlustleistung 250 mw repetitive peak reverse voltage periodische spitzensperrspannung 120...250 v plastic case kunststoffgeh?use sot-23 (to-236) weight approx. C gewicht ca. 0.01 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped and reeled standard lieferform gegurtet auf rolle maximum ratings (t a = 25c) grenzwerte (t a = 25c) type typ continuous reverse voltage dauersperrspannung v r [v] repetitive peak reverse voltage periodische spitzensperrspannung v rrm [v] 1 ) bas19 100 120 BAS20 150 200 bas21 200 250 power dissipation ? verlustleistung p tot 250 mw 2 ) max. average forward current (dc) dauergrenzstrom i fav 200 ma 1 ) repetitive peak forward current periodischer spitzenstrom i frm 625 ma 1 ) non repetitive peak forward surge current sto?strom-grenzwert t p 1 s t p 1 s i fsm i fsm 0.5 a 2.5 a junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s - 55...+150c - 55+150c characteristics (t j = 25c) kennwerte (t j = 25c) forward voltage durchlass-spannung i f = 100 ma i f = 200 ma v f v f < 1.00 v < 1.25 v leakage current sperrstrom t j = 25c t j = 150c v = v r i r < 100 na v = v r i r < 100 a 1 tested with 100 a pulses C gemessen mit 100 a-impulsen 2 mounted on p.c. board with 3 mm 2 copper pad at each terminal montage auf leiterplatte mit 3 mm 2 kupferbelag (l?tpad) an jedem anschluss ? diotec semiconductor ag http://www.diotec.com/ 1 2 . 5 m a x 1 . 3 0 . 1 1.1 2.9 0.1 0.4 1 2 3 type code 1.9
bas19 ... bas21 characteristics (t j = 25c) kennwert e (t j = 25c) max. junction capacitance C max. sperrschichtkapazit?t v r = 0 v, f = 1 mhz c t < 5 pf reverse recovery time C sperrverzug i f = 10 ma ber/through i r = 10 ma bis/to i r = 1 ma t rr < 50 ns thermal resistance junction to ambient air w?rme widerstand sperrschicht C umgebende luft r tha < 420 k/w 1 ) pinning C anschlussbelegung marking C stempelung single diode einzeldiode 1 = a 2 = n.c./frei 3 = c hb or hc 1 mounted on p.c. board with 3 mm 2 copper pad at each terminal montage auf leiterplatte mit 3 mm 2 kupferbelag (l?tpad) an jedem anschluss 2 http://www.diotec.com/ ? diotec semiconductor ag [%] p tot power dissipation versus ambient temperature ) verlustleistung in abh. von der umgebungstemp. ) 1 1 120 100 80 20 0 0 150 50 100 t a [c] 60 40 forward characteristics (typical values) durchlasskennlinien (typische werte) t = 25c j t = 125c j [a] i f v f [v] 1.4 1.0 0.8 0.6 0.4 0 10 -3 10 -2 10 -1 1 10 2 1 3 |
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