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| Datasheet File OCR Text: |
| switching diode features z for high-speed switching applications z connected in series marking: kjg or a7 maximum ratings @ta =25 parameter symbol limit unit reverse voltage v r 75 v forward current i o 150 ma forward power dissipation p d 200 mw junction temperature t j 150 storage temperature t stg -55~ + 150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 100a 75 v reverse voltage leakage current i r v r =75v v r =20v 2.5 25 a na forward voltage v f i f =1ma i f =10ma i f =50ma i f =150ma 715 855 1000 1250 mv diode capacitance c d v r =0v f=1mhz 2 pf reveres recovery time t rr i f =i r =10ma i rr =0.1i r r l =100 ? 4 n s sot-323 1 2 3 z z 2012-1 willas electronic corp. sot-323 plastic-encapsulate d iodes BAV99W preliminary
outline drawing dimensions in inches and (millimeters) sot-323 rev.d .056(1.40) .047(1.20) .096(2.45) .078(2.00) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .008(0.20) .004(0.10)max. .087(2.20) .070(1.80) .054(1.35) .045(1.15) 2012-1 willas electronic corp. sot-323 plastic-encapsulate d iodes BAV99W preliminary |
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