extremely low r 30v p-channel mosfet v ds i d (at v gs =-10v) -8a r ds(on) (at v gs =-10v) < 32m w r ds(on) (at v gs =-4.5v) < 53m w symbol v ds the AON2409 combines advanced trench mosfet technology with a low resistance package to provide ds(on) . this device is ideal for load switch and battery protection applications. v maximum units -30v drain-source voltage -30 absolute maximum ratings t a =25c unless otherwise noted parameter g d s v gs i dm t j , t stg symbol t 10s steady-state a continuous drain current g i d t a =25c c thermal characteristics typ max maximum junction-to-ambient a c/w r q ja 37 66 c/w -8 gate-source voltage w t a =25c t a =70c 1.8 maximum junction-to-ambient a d 79 -55 to 150 units junction and storage temperature range 44 parameter v 2.8 t a =70c 20 power dissipation a -32 pulsed drain current c p d -6.3 AON2409 general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.1 -1.75 -2.3 v i d(on) -32 a 26.5 32 t j =125c 33.6 41 42 53 m w g fs 20 s v sd -0.7 -1 v i s 3.5 a c iss 530 pf c oss 114 pf c rss 75 pf r g 11 22 w q g (10v) 12 14.5 nc q g (4.5v) 6 7.5 nc q gs 1.8 nc q gd 3 nc t d(on) 7.7 ns t 5.5 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage r ds(on) static drain-source on-resistance i dss v ds =0v, v gs = 20v v gs =0v, v ds =-15v, f=1mhz switching parameters m w on state drain current maximum body-diode continuous current turn-on delaytime v =-10v, v =-15v, r =1.8 w , gate resistance total gate charge i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-8a input capacitance output capacitance zero gate voltage drain current gate-body leakage current v gs =-10v, v ds =-15v, i d =-8a gate source charge v ds =-5v, i d =-8a forward transconductance v gs =-4.5v, i d =-6a reverse transfer capacitance dynamic parameters diode forward voltage v gs =0v, v ds =0v, f=1mhz gate drain charge total gate charge m a v ds =v gs , i d =-250 m a i s =-1a,v gs =0v turn-on rise time t r 5.5 ns t d(off) 26.3 ns t f 11.5 ns t rr 12.2 ns q rr 25.4 nc body diode reverse recovery time i f =-8a, di/dt=500a/ m s v gs =-10v, v ds =-15v, r l =1.8 w , r gen =3 w turn-off fall time body diode reverse recovery charge i f =-8a, di/dt=500a/ m s turn-off delaytime turn-on rise time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction temperat ure of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. 30v p-channel mosfet AON2409 www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 0 5 10 15 20 0 1 2 3 4 5 6 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 10 20 30 40 50 60 70 0 5 10 15 20 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-6a v gs =-10v i d =-8a 25 c 125 c v ds =-5v v gs =-4.5v v gs =-10v 0 5 10 15 20 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-3.0v -3.5v -6v -10v -4.5v - 4v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 10 20 30 40 50 60 70 80 90 2 4 6 8 10 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-8a 25 c 125 c 30v p-channel mosfet AON2409 www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-8a 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - to - ambient t a =25 c operating area (note f) figure 10: single pulse power rating junction - to - ambient (note h) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note h) d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse r q ja =79 c/w 30v p-channel mosfet AON2409 www.freescale.net.cn 4 / 5
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i 30v p-channel mosfet AON2409 www.freescale.net.cn 5 / 5
|
