CHA5056 rohs compliant ref: dsCHA50567211 - 30 jul 07 1/8 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 17-27ghz high power amplifier gaas monolithic microwave ic description the CHA5056 is three-stage monolithic high power amplifier. the backside of the chip is both rf and dc grounds. this helps to simplify the assembly process. the circuit is manufactured with a power phemt process, 0.15m gate length, via holes through the substrate. it is supplied in chip form. main features broadband performance 17-27ghz 21db linear gain esd protected 29dbm output power @1db compression dc power consumption @1db compression: 940ma@4.5v chip size: 3.15 x 2.2 x 0.1mm main characteristics tamb. = 25c, vd = 4.5v symbol parameter min typ max unit fop operating frequency range 17 27 ghz g small signal gain 21 db p1db output power @ 1db gain compression 29 dbm id1db drain current @ 1db gain compression 940 ma esd protection: electrostatic discharge sensitive d evice. observe handling precautions! typical on wafer measurement vd1 rfin rfout vg1,2 vg3 vd2 vd3 vd3 p1db and linear gain versus frequency 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 16 17 18 19 20 21 22 23 24 25 26 27 28 frequency (ghz) g a in (d b ) & p 1 d b (d b m )
CHA5056 17-27ghz high power amplifier ref: dsCHA50567211 - 30 jul 07 2/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 electrical characteristics tamb. = 25c; vd = 4,5v and id = 890ma, cw biasing mode. these values are representative of on wafer measurements. symbol parameter min typ max unit fop operating frequency range 17 27 ghz g small signal gain 21 db p1db pulsed output power at 1db compression (1) 2 9 dbm s11 input return loss 2.0:1 s22 ouput return loss 2.2:1 oip3 output ip3 39 dbm vd 1,2,3 dc drain voltage 4.5 v vg 1-2,3 dc gate voltage -1.7 v id small signal bias current (2) 890 ma id1db bias current at 1db compression 940 ma (1) these values are representative for pulsed on-wa fer measurements that are made without bonding wire s at the rf ports. (2) this parameter is fixed by gate voltage vg. absolute maximum ratings tamb. = 25c (1) symbol parameter values unit vd maximum drain bias voltage +5 v id maximum small signal bias current 1100 ma vg gate bias voltage -4 to +0.8 v pin maximum input power overdrive +13.0 dbm tch maximum channel temperature +175 c ta operating temperature range -40 to +85 c tstg storage temperature range -55 to +125 c (1) operation of this device above anyone of these parameters may cause permanent damage.
17-27ghz high power amplifier CHA5056 ref: dsCHA50567211 - 30 jul 07 3/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 gain & pout versus pin @freq=17ghz 8 10 12 14 16 18 20 22 24 26 28 30 32 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 pin (dbm) gain (db) & pout (dbm) gain (db) pout (dbm) linear gain & p1db & psat versus frequency 14 16 18 20 22 24 26 28 30 32 16 17 18 19 20 21 22 23 24 25 26 27 28 frequency (ghz) gain(db) & pout(dbm) linear gain (db) p1db (dbm) psat (dbm) typical measured performance pulsed on wafer measurement (without bonding wires at the rf ports) tamb = +25c, vd = +4.5v, small signal id = 890ma
CHA5056 17-27ghz high power amplifier ref: dsCHA50567211 - 30 jul 07 4/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 gain & pout versus pin @freq=21ghz 8 10 12 14 16 18 20 22 24 26 28 30 32 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 pin (dbm) gain (db) & pout (dbm) gain (db) pout (dbm) gain & pout versus pin @freq=27ghz 8 10 12 14 16 18 20 22 24 26 28 30 32 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 pin (dbm) gain (db) & pout (dbm) pout (dbm) gain (db)
17-27ghz high power amplifier CHA5056 ref: dsCHA50567211 - 30 jul 07 5/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 c/i3 versus single carrier level output power at 25 c 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 single carrier level output power (dbm) c/i3 (dbc) 17 ghz 19 ghz 20 ghz 21 ghz 23 ghz 25 ghz 26 ghz 27 ghz c/i3 versus temperature at 20ghz 21 23 25 27 29 31 33 35 37 39 41 43 45 47 49 51 53 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 single carrier level output power (dbm) c/i3 (dbc) -40c +25c +75c typical measured performance on jig measurement: tamb = +25c, vd = +4.5v, id = 890ma
CHA5056 17-27ghz high power amplifier ref: dsCHA50567211 - 30 jul 07 6/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 c/i3 versus temperature at 23ghz 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 single carrier level output power (dbm) c/i3 (dbc) -40c +25c +75c chip assembly and mechanical data units: m tol: +/-35m
17-27ghz high power amplifier CHA5056 ref: dsCHA50567211 - 30 jul 07 7/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 note: supply feed might be capacitively bypassed. 25 m m diameter gold wire is to be prefered. dc pads size: 114/114 m, rf pads size: 129/204 m, chip thickness: 100 m. rf wire bonding length: 700m max 10nf 10nf 120pf 120pf 120pf 120pf 120pf 120pf 10nf 10nf 10nf to vg1, 2 dc gate supply to vg3 dc gate supply to vd3 dc gate supply to vd1, 2 dc gate supply to vd3 dc drain supply
CHA5056 17-27ghz high power amplifier ref: dsCHA50567211 - 30 jul 07 8/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 vd1 rfin rfout vg1, 2 vg3 vd2 vd3 vd3 note due to esd protection rfin and rfout are dc grounde d, an external capacitance might be requested to isolate the product from external volt age that could be present on the rf accesses. esd protections are also implemented on gate access es. ordering information chip form: CHA5056-98f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of u se of such information nor for any infringement of patents or other rights of third parties which may result from its u se. no license is granted by implication or otherwi se under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are s ubject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical co mponents in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.
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