hi-sincerity microelectronics corp. spec. no. : mos200910 issued date : 2009.04.07 revised date : page no. : 1/6 h02n60e, h02n60f hsmc product specification H02N65 series H02N65 series pin assignment g d s H02N65 series symbol: 3 2 1 3-lead plastic to-220fp package code: f pin 1: gate pin 2: drain pin 3: source 3-lead plastic to-220ab package code: e pin 1: gate pin 2 & tab: drain pin 3: source 1 2 3 tab n-channel power field effect transistor description this high voltage mosfet uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. in addition, this advanced mosfet is designed to withstand high energy in avalanche and commutation modes. the new energy efficient design also offers a drain-to-source diode with a fast recovery time. designed for high voltage, high speed switching applications in power supplies, converters and pwm motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. features ? robust high voltage termination ? avalanc he energy specified ? source-to-drain diode recovery time co mparable to a discrete fast recovery diode ? diode is characterized for use in bridge circuits ? i dss and v ds(on) specified at elevated temperature absolute maximum ratings symbol parameter value units i d drain to current (continuous) 2 a i dm drain to current (pulsed) 8 a v gs gate-to-source voltage (continue) 30 v total power dissipation (t c =25 o c) h02n60e (to-220ab) h02n60f (to-220fp) 44 23 w p d derate above 25 c h02n60e (to-220ab) h02n60f (to-220fp) 0.22 0.18 w/ c t j , t stg operating and storage temperature range -55 to 150 c e as single pulse drain-to-source avalanche enrgy-tj=25 c (v dd =100v, v gs =10v, i l =2a, l=10mh, r g =25 ) 120 mj t l maximum lead temperature for soldering purposes, 1/8? from case for 10 seconds 260 c
hi-sincerity microelectronics corp. spec. no. : mos200910 issued date : 2009.04.07 revised date : page no. : 2/6 h02n60e, h02n60f hsmc product specification thermal characteristics symbol parameter value units to-220ab 2.87 r jc thermal resistance junction to case max. to-220fp 5.5 c/w r ja thermal resistance junction to ambient max. 62.5 c/w electrical characteristics (tj=25 c, unless otherwise specified) symbol characteristic min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs =0v, i d =250ua) 650 - - v drain-source leakage current (v ds =650v, v gs =0v) - - 5 ua i dss drain-source leakage current (v ds =480v, v gs =0v, t j =125 c) - - 50 ua i gssf gate-source leakage current-forward (v gsf =30v, v ds =0v) - - 100 na i gssr gate-source leakage current-reverse (v gsr =-30v, v ds =0v) - - -100 na v gs(th) gate threshold voltage (v ds =v gs , i d =250ua) 2 - 4 v r ds(on) static drain-source on-resistance (v gs =10v, i d =1a)* - - 4.6 g fs forward transconductance (v ds 50v, i d =1a)* 1 - - mhos c iss input capacitance - 300 - c oss output capacitance - 30 - c rss reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz - 3 - pf t d(on) turn-on delay time - 13 - t r rise time - 12 - t d(off) turn-off delay time - 73 - t f fall time (v dd =300v, i d =2a, r g =25 , v gs =10v)* - 15 - ns q g total gate charge - 9.3 13 q gs gate-source charge - 2 - q gd gate-drain charge (v ds =300v, i d =2a, v gs =10v)* - 3.3 - nc *: pulse test: pulse width 300us, duty cycle 2% source-drain diode symbol characteristic min. typ. max. units v sd forward on voltage(1) i s =2a, v gs =0v, t j =25 o c - - 1.4 v t rr reverse recovery time - 235 - ns q rr reverse recovery charge i s =2a, v gs =0v, d is /d t =100a/us - 1.0 - nc **: negligible, dominated by circuit inductance
hi-sincerity microelectronics corp. spec. no. : mos200910 issued date : 2009.04.07 revised date : page no. : 3/6 h02n60e, h02n60f hsmc product specification characteristics curve figure 1. on-region characteristic s figure 2. transfer characteristic s figure 3. on-resitance variation v s drain current and gate voltage figure 4. body diode forward voltage variation vs source current and temperature figure 5. capacitance characteristic s figure 6. gate charge characteristic s
hi-sincerity microelectronics corp. spec. no. : mos200910 issued date : 2009.04.07 revised date : page no. : 4/6 h02n60e, h02n60f hsmc product specification characteristics curve figure 7. breakdown voltage variation vs temperature figure 8. onresistance variation vs temperature
hi-sincerity microelectronics corp. spec. no. : mos200910 issued date : 2009.04.07 revised date : page no. : 5/6 h02n60e, h02n60f hsmc product specification to-220ab dimension a b e g i k m o p 3 2 1 c n h d tab f j l dim min. max. marking: note: green label is used for pb-free packing pin style: 1.gate 2 & tab.drain 3.source material: ? lead solder plating: sn60/pb40 (normal), sn/3.0ag/0.5cu or pure-tin (pb-free) ? mold compound: epoxy resin family, flammability solid bu rning class: ul94v-0 3-lead to-220ab plastic package hsmc package code: e to-220fp dimension important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of hsmc. ? hsmc reserves the right to make changes to its products without notice. ? hsmc semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? hsmc assumes no liability for any consequence of customer prod uct design, infringement of paten ts, or application assistance. head office and factory: ? head office (hi-sincerity microelectronics corp.): 10f.,no. 61, sec. 2, chung-shan n. rd. taipei taiwan r.o.c. tel: 886-2-25212056 fax: 886-2-25632712, 25368454 a 5.58 7.49 b 8.38 8.90 c 4.40 4.70 d 1.15 1.39 e 0.35 0.60 f 2.03 2.92 g 9.66 10.28 h - *16.25 i - *3.83 j 3.00 4.00 k 0.75 0.95 l 2.54 3.42 m 1.14 1.40 n - *2.54 o 12.70 14.27 p 14.48 15.87 *: typical, unit: mm marking: dim min. max. a 6.48 7.40 c 4.40 4.90 d 2.34 3.00 e 0.45 0.80 f 9.80 10.36 g 3.10 3.60 i 2.70 3.43 j 0.60 1.00 k 2.34 2.74 l 12.48 13.60 m 15.67 16.20 n 0.90 1.47 o 2.00 2.96 1/2/4/5 - *5 o note: green label is used for pb-free packing pin style: 1.gate 2.drain 3.source material: ? lead solder plating: sn60/pb40 (normal), sn/3.0ag/0.5cu or pure-tin (pb-free) ? mold compound: epoxy resin family, flammability solid bu rning class: ul94v-0 3-lead to-220fp plastic package hsmc package code: f a d f g i k l m 3 2 1 c j n 3 e 2 o 4 5 1 3 - *27 o *: typical, unit: mm
hi-sincerity microelectronics corp. spec. no. : mos200910 issued date : 2009.04.07 revised date : page no. : 6/6 h02n60e, h02n60f hsmc product specification soldering methods for hsmc?s products 1. storage environment: temperature=10 o c~35 o c humidity=65%15% 2. reflow soldering of surface-mount devices figure 1: temperature profile t p t l ramp-down ramp-up ts max ts min critical zone t l to t p t s preheat t l t p 25 t 25 o c to peak time temperature profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) <3 o c/sec <3 o c/sec preheat - temperature min (ts min ) - temperature max (ts max ) - time (min to max) (ts) 100 o c 150 o c 60~120 sec 150 o c 200 o c 60~180 sec ts m a x t o t l - ramp-up rate <3 o c/sec <3 o c/sec time maintained above: - temperature (t l ) - time (t l ) 183 o c 60~150 sec 217 o c 60~150 sec peak temperature (t p ) 240 o c +0/-5 o c 260 o c +0/-5 o c time within 5 o c of actual peak temperature (t p ) 10~30 sec 20~40 sec ramp-down rate <6 o c/sec <6 o c/sec time 25 o c to peak temperature <6 minutes <8 minutes 3. flow (wave) soldering (solder dipping) products peak temperature dipping time pb devices. 245 o c 5 o c 10sec 1sec pb-free devices. 260 o c 5 o c 10sec 1sec
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