document number: 94074 for technical questions within your region, please contact one of the following: www.vishay.com revision: 23-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 2 x 25 a vs-hfa50pa60cpbf vishay semiconductors features ? ultrafast and ultrasoft recovery ? very low i rrm and q rr ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description vs-hfa50pa60cpbf is a state of the art center tap ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. with basic ratings of 600 v and 25 a per leg continuous current, the vs-hfa50pa60cpbf is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to snap-off during the t b portion of recovery. the hexfred features combine to offer designers a rectifier with lower noise and signific antly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snubbing, component count and heatsink sizes. the hexfred vs-hfa50pa60cpbf is ideally suited for applications in power supp lies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. product summary package to-247ac i f(av) 2 x 25 a v r 600 v v f at i f 1.7 v t rr (typ.) 23 ns t j max. 150 c diode variation single die to-247ac base common cathode common cathode 2 2 13 anode 1 anode 2 absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 600 v maximum continuous forward current per leg i f t c = 100 c 25 a per device 50 single pulse forward current i fsm 225 maximum repetitive forward current i frm 100 maximum power dissipation p d t c = 25 c 150 w t c = 100 c 60 operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94074 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa50pa60cpbf vishay semiconductors hexfred ? ultrafast soft recove ry diode, 2 x 25 a electrical specifications per leg (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 600 - - v maximum forward voltage v fm i f = 25 a see fig. 1 -1.31.7 i f = 50 a - 1.5 2.0 i f = 25 a, t j = 125 c - 1.3 1.7 maximum reverse leakage current i rm v r = v r rated see fig. 2 -1.520 a t j = 125 c, v r = 0.8 x v r rated - 600 2000 junction capacitance c t v r = 200 v see fig. 3 - 55 100 pf series inductance l s measured lead to lead 5 mm from package body -12-nh dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units reverse recovery time see fig. 5, 10 t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 23 - ns t rr1 t j = 25 c i f = 25 a di f /dt = 200 a/s v r = 200 v -5075 t rr2 t j = 125 c - 105 160 peak recovery current see fig. 6 i rrm1 t j = 25 c - 4.5 10 a i rrm2 t j = 125 c - 8.0 15 reverse recovery charge see fig. 7 q rr1 t j = 25 c - 112 375 nc q rr2 t j = 125 c - 420 1200 peak rate of fall of recovery current during t b see fig. 8 di (rec)m /dt1 t j = 25 c - 250 - a/s di (rec)m /dt2 t j = 125 c - 160 - thermal - mechanical specifications parameter symbol test conditio ns min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c junction to case, single leg conducting r thjc - - 0.83 k/w junction to case, both legs conducting - - 0.42 thermal resistance, junction to ambient r thja typical socket mount - - 40 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.25 - weight -6.0- g -0.21- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-247ac hfa50pa60c
document number: 94074 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa50pa60cpbf hexfred ? ultrafast soft recove ry diode, 2 x 25 a vishay semiconductors fig. 1 - maximum forward voltage drop vs. instantaneous forward current (per leg) fig. 2 - typical reverse current vs. reverse voltage (per leg) fig. 3 - typical junction capacitance vs. reverse voltage (per leg) fig. 4 - maximum thermal impedance z thjc characteristics (per leg) i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.6 1.0 1.4 1.8 2.2 2.6 1 100 10 94074_01 t j = 150 c t j = 125 c t j = 25 c i r - reverse current (a) v r - reverse voltage (v) 0 200 400 600 0.01 0.1 1 10 100 1000 10 000 94074_02 t j = 125 c t j = 150 c t j = 25 c c t - junction capacitance (pf) v r - reverse voltage (v) 1101001000 10 1000 100 94074_03 t j = 25 c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal response 94074_04 single pulse (thermal resistance) p dm t 2 t 1 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94074 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa50pa60cpbf vishay semiconductors hexfred ? ultrafast soft recove ry diode, 2 x 25 a fig. 5 - typical reverse recovery time vs. di f /dt (per leg) fig. 6 - typical re covery current vs. di f /dt (per leg) fig. 7 - typical stored charge vs. di f /dt (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt (per leg) t rr (ns) di f /dt (a/s) 100 1000 0 140 120 20 60 100 40 80 94074_05 v r = 200 v t j = 125 c t j = 25 c i f = 50 a i f = 25 a i f = 10 a i rr (a) di f /dt (a/s) 100 1000 0 30 20 25 5 10 15 94074_06 i f = 50 a i f = 25 a i f = 10 a v r = 200 v t j = 125 c t j = 25 c q rr (nc) di f /dt (a/s) 100 1000 0 1400 1000 200 400 600 1200 800 94074_07 i f = 50 a i f = 25 a i f = 10 a v r = 200 v t j = 125 c t j = 25 c di (rec)m /dt (a/s) di f /dt (a/s) 100 1000 100 10 000 1000 94074_08 i f = 50 a i f = 25 a i f = 10 a v r = 200 v t j = 125 c t j = 25 c
document number: 94074 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa50pa60cpbf hexfred ? ultrafast soft recove ry diode, 2 x 25 a vishay semiconductors fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94074 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa50pa60cpbf vishay semiconductors hexfred ? ultrafast soft recove ry diode, 2 x 25 a ordering information table 1 - vishay semiconductors product 2 - hexfred ? family 3 - electron irradiated 4 - current rating (50 = 50 a) 5 - pa = to-247ac device code 5 1 3 2 4 6 7 8 hf vs- a 50 pa 60 c pbf 6 7 - circuit configuration c = common cathode 8 - pbf = lead (pb)-free - voltage rating: (60 = 600 v) links to related documents dimensions www.vishay.com/doc?95223 part marking information www.vishay.com/doc?95226
document number: 95221 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ac outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are m easured at the outermost extrem es of the plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimension: inches (6) thermal pad contour optional with in dimensions e, h1, d2 and e1 (7) dimension e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to-220, d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e1 6.86 8.89 0.270 0.350 6 a1 1.14 1.40 0.045 0.055 e2 - 0.76 - 0.030 7 a2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.97 0.015 0.038 4 h1 6.09 6.48 0.240 0.255 6, 7 b2 1.20 1.73 0.047 0.068 l 13.52 14.02 0.532 0.552 b3 1.14 1.73 0.045 0.068 4 l1 3.32 3.82 0.131 0.150 2 c 0.36 0.61 0.014 0.024 l3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 l4 0.76 1.27 0.030 0.050 2 d 14.85 15.25 0.585 0.600 3 ? p 3.54 3.73 0.139 0.147 d1 8.38 9.02 0.330 0.355 q 2.60 3.00 0.102 0.118 d2 11.68 12.88 0.460 0.507 6 ? 90 to 93 90 to 93 e 10.11 10.51 0.398 0.414 3, 6 13 2 d d1 h1 q detail b c a b l e1 lead tip l4 l3 e e2 ? p 0.015 a b mm 0.014 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220ac (6) (6) (7) (6) (7) view a - a e1 (6) d2 (6) h1 thermal pad e detail b d l1 d 123 c c 2 x b2 2 x b
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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