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smps mosfet hexfet power mosfet v dss r ds(on) max i d 20v 6.5m ? 110a d-pak i-pak IRFR3711 irfu3711 applications benefits ultra-low gate impedance very low rds(on) at 4.5v v gs fully characterized avalanche voltage and current high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use high frequency buck converters for server processor power synchronous fet optimized for synchronous buck converters including capacitive induced turn-on immunity 100% r g tested absolute maximum ratin g s symbol parameter units v ds drain-source voltage v v gs gate-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c maximum power dissipation w p d @t c = 25c maximum power dissipation linear derating factor w/c t j , t stg junction and storage temperature range c thermal resistance symbol parameter typ max units r jc junction-to-case ??? 1.04 r ja junction-to-ambient (pcb mount) ??? 50 c/w r ja junction-to-ambient ??? 110 -55 to +150 max 100 69 440 20 20 2.5 0.96 120 irfr/u3711 www.freescale.net.cn 1 / 10
static @ t j = 25c (unless otherwise specified) symbol parameter min typ max units v (br)dss drain-to-source breakdown voltage 20 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.022 ??? v/c ??? 5.2 6.5 ??? 6.7 8.5 v gs(th) gate threshold voltage 1.0 ??? 3.0 v ??? ??? 140 ??? ??? 20 ??? ??? 100 gate-to-source forward leakage ??? ??? 200 gate-to-source reverse leakage ??? ??? -200 dynamic @ t j = 25c (unless otherwise specified) symbol parameter min typ max units g fs forward transconductance 53 ??? ??? s q g total gate charge ??? 29 44 q gs gate-to-source charge ??? 7.3 ??? q gd gate-to-drain ("miller") charge ??? 8.9 ??? q oss output gate charge ??? 33 ??? v gs = 0v, v ds = 10v r g gate resistance 0.3 ??? 2.5 ? t d(on) turn-on delay time ??? 12 ??? t r rise time ??? 220 ??? t d(off) turn-off delay time ??? 17 ??? t f fall time ??? 12 ??? c iss input capacitance ??? 2980 ??? c oss output capacitance ??? 1770 ??? c rss reverse transfer capacitance ??? 280 ??? avalanche characteristics symbol parameter units e as sin g le pulse avalanche ener gy mj i ar avalanche current a diode characteristics symbol parameter min typ max units continuous source current (body diode) pulsed source current (body diode) ??? 0.88 1.3 ??? 0.82 ??? t rr reverse recovery time ??? 50 75 ns q rr reverse recovery charge ??? 61 92 nc t rr reverse recovery time ??? 48 72 ns q rr reverse recovery charge ??? 65 98 nc typ 440 v diode forward voltage a ??? 110 ??? ??? i s i sm v sd ??? na ns nc pf 30 mosfet symbol showing the r ds(on) i dss i gss static drain-to-source on-resistance drain-to-source leakage current m ? a t j = 125c, i f = 16a, v r = 10v di/dt = 100a/s t j = 125c, i s = 30a, v gs = 0v conditions integral reverse p-n junction diode. t j = 25c, i s = 30a, v gs = 0v t j = 25c, i f = 16a, v r = 10v di/dt = 100a/s ??? ??? conditions v ds = 16v, i d = 30a i d = 15a v ds = 10v v gs = 4.5v v gs = 0v v ds = 10v 460 v ds = 20v, v gs = 0v v ds = 16v, v gs = 0v, t j = 125c v gs = 20v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 15a v gs = -20v v gs = 4.5v, i d = 12a max v gs = 4.5v v dd = 10v i d = 30a r g = 1.8 ? v ds = 16v, v gs = 0v ? = 1.0mhz v ds = v gs , i d = 250a irfr/u3711 www.freescale.net.cn 2 / 10
fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 110a irfr/u3711 www.freescale.net.cn 3 / 10
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 10 20 30 40 50 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 30a v = 10v ds v = 16v ds 0.1 1 10 100 1000 0.2 0.8 1.4 2.0 2.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd irfr/u3711 www.freescale.net.cn 4 / 10
fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %

+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package irfr/u3711 www.freescale.net.cn 5 / 10
25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 13a 19a 30a q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v irfr/u3711 www.freescale.net.cn 6 / 10
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets
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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 1.0mh r g = 25 ? , i as = 30a. pulse width 400s; duty cycle 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a. when mounted on 1" square pcb (fr-4 or g-10 material) . for recommended footprint and soldering techniques refer to application note #an-994 ! $ "".! /0( irfr/u3711 www.freescale.net.cn 10 / 10

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