View RF5110G_4969887.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 of 24 optimum technology matching ? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. ordering information rf mems ldmos RF5110G 3 v general purpose/gsm power amplifier the RF5110G is a high-power, high-gain, high-efficiency power amplifier. the device is manufactured on an advanced gaas hbt process, and has been designed for use as the final rf amplifier in gsm hand-held equipment in the 900 mhz band, and general purpose radio applications in standard sub-bands from 150 mhz to 960 mhz. on-board power control provides over 70 db of control range with an ana- log voltage input, and allows for power down with a logic "low" in standby operation. the device is self-contained with 50 input and the output can be easily matched to obtain optimum power and efficiency characteristics. features ? general purpose: single 2.8 v to 3.6 v supply 32 dbm output power 53% efficiency 150 mhz to 960 mhz operation ? gsm: single 2.7 v to 4.8 v supply +36 dbm output power at 3.5 v 32 db gain with analog gain con- trol 57% efficiency 800 mhz to 950 mhz operation supports gsm and e-gsm applications ? fm radio applications: 150 mhz/220 mhz/450 mhz 865 mhz to 928 mhz ? 3 v gsm cellular handsets ? gprs compatible RF5110G 3 v general purpose/gsm power amplifier RF5110Gpcba-410 fully assembled evaluation board rev a7 ds090521 9 rohs & pb-free product package style: qfn, 16-pin, 3 x 3
2 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. absolute maximum ratings parameter rating unit supply voltage -0.5 to +6.0 v dc power control voltage (v apc1,2 ) -0.5 to +3.0 v dc supply current 2400 ma input rf power +13 dbm duty cycle at max power 50 % output load vswr 10:1 operating case temperature -40 to +85 c storage temperature -55 to +150 c note: this table applies to radio operating within gsm specification. for rat- ings pertaining to general purpose radio applications, see theory of opera- tion section. parameter specification unit condition min. typ. max. overall general purpose radio: temp = 25c, v apc1,2 = 2.8 v, duty cycle = 100% operating frequency 150 mhz v cc = 3.3 v. see application schematic. output power 32 dbm gain 31.5 db efficiency 53 % operating frequency 220 mhz v cc = 3.3 v. see application schematic. output power 32 dbm gain 32 db efficiency 52 % operating frequency 450 mhz v cc = 3.0 v. see application schematic. output power 32 dbm gain 32.5 db efficiency 50.5 % operating frequency 865 928 mhz v cc = 3.3 v. see application schematic. output power 32 dbm gain 33.0 29.5 db equals typical at respective frequency corner efficiency 49 49 % equals typical at respective frequency corner caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the device under absolute maximum rating condi- tions is not implied. rohs status based on eu directive 2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. parameter specification unit condition min. typ. max. overall temp = 25c, v cc = 3.6 v, v apc1,2 = 2.8 v, p in = +4.5 dbm, freq = 880 mhz to 915 mhz, 37.5% duty cycle, pulse width = 1731 s operating frequency range 880 to 915 mhz see evaluation board schematic. usable frequency range 800 to 950 mhz using different evaluation board tune. maximum output power 33.8 34.5 dbm temp = 25c, v cc = 3.6 v, v apc1,2 = 2.8 v 33.1 dbm temp = +60c, v cc = 3.3 v, v apc1,2 = 2.8 v total efficiency 50 57 % at p out, max , v cc = 3.6 v 12 % p out = +20 dbm 5%p out = +10 dbm input power for max output +4.5 +7.0 +9.5 dbm output noise power -72 dbm rbw = 100 khz, 925 mhz to 935 mhz, p out, min < p out < p out, max , p in, min < p in < p in, max , v cc = 3.3 v to 5.0 v -81 dbm rbw = 100 khz, 935 mhz to 960 mhz, p out, min < p out < p out, max , p in, min < p in < p in, max , v cc = 3.3 v to 5.0 v forward isolation -22 dbm v apc1,2 = 0.3 v, p in = +9.5 dbm second harmonic -20 -7 dbm p in = +9.5 dbm third harmonic -25 -7 dbm p in = +9.5 dbm all other non-harmonic spurious -36 dbm input impedance 50 optimum source impedance 40 + j10 for best noise performance input vswr 2.5:1 p out, max -5 db < p out < p out, max 4:1 p out < p out, max -5 db output load vswr stability 8:1 spurious<-36 dbm, v apc1,2 = 0.3 v to 2.6 v, rbw = 100 khz ruggedness 10:1 no damage output load impedance 2.6 - j1.5 load impedance presented at rf out pad power control v apc1 v apc2 power control ?on? 2.6 v maximum p out , voltage supplied to the input power control ?off? 0.2 0.5 v minimum p out , voltage supplied to the input power control range 75 db v apc1,2 = 0.2 v to 2.6 v gain control slope 5 100 150 db/v p out =-10 dbm to +35 dbm apc input capacitance 10 pf dc to 2 mhz apc input current 4.5 5 ma v apc1,2 = 2.8 v 25 av apc1,2 = 0 v turn on/off time 100 ns v apc1,2 = 0 to 2.8 v power supply power supply voltage 3.5 v specifications 2.7 4.8 v nominal operating limits, p out < +35 dbm 5.5 v with maximum output load vswr 6:1, p out < +35 dbm power supply current 2 a dc current at p out, max
4 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. 15 200 335 ma idle current, p in < -30 dbm 110 ap in < -30 dbm, v apc1,2 = 0.2 v 110 ap in < -30 dbm, v apc1,2 = 0.2 v, temp = +85c
5 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. pin function description interface schematic 1 vcc1 power supply for the pre-amplifier stage and interstage matching. this pin forms the shunt inductance needed for proper tuning of the interstage match. refer to the application schematic for proper configuration. note that position and value of the components are important. see pin 3. 2 gnd1 ground connection for the pre-amplifier stage. keep traces physically short and connect immediately to the ground plane for best performance. it is important for stability that this pin has it?s own vias to the groundplane, to minimize any common inductance. see pin 1. 3 rf in rf input. this is a 50 input, but the actual impedance depends on the interstage matching network connected to pin 1. an external dc blocking capacitor is required if this port is connected to a dc path to ground or a dc voltage. 4 gnd2 ground connection for the driver stage. to minimize the noise power at the output, it is recommended to connect this pin with a trace of about 40 mil to the ground plane. this will slightly reduce the small signal gain, and lower the noise power. it is important for stability that this pin have it?s own vias to the ground plane, minimizing common inductance. see pin 3. 5 vcc2 power supply for the driver stage and interstage matching. this pin forms the shunt inductance needed for proper tuning of the interstage match. please refer to the application schematic for proper configuration, and note that position and value of the components are important. 6 vcc2 same as pin 5. 7nc not connected. 8 2f0 connection for the second harmonic trap. this pin is internally connected to the rf out pins. the bonding wire together with an external capacitor form a series resonator that should be tuned to the second harmonic fre- quency in order to increase efficiency and reduce spurious outputs. same as pin 9. 9 rf out rf output and power supply for the output stage. bias voltage for the final stage is provided through this wide output pin. an external matching net- work is required to provide the optimum load impedance. 10 rf out same as pin 9. same as pin 9. 11 rf out same as pin 9. same as pin 9. 12 rf out same as pin 9. 13 nc not connected. 14 vcc power supply for the bias circuits. 15 apc2 power control for the output stage. see pin 16 for more details. see pin 16. 16 apc1 power control for the driver stage and pre-amplifier. when this pin is "low," all circuits are shut off. a "low" is typically 0.5 v or less at room tempera- ture. a shunt bypass capacitor is required. during normal operation this pin is the power control. control range varies from about 1.0 v for -10 dbm to 2.6 v for +35 dbm rf output power. the maximum power that can be achieved depends on the actual output matching; see the application infor- mation for more details. the maximum current into this pin is 5 ma when v apc1 = 2.6 v, and 0 ma when v apc = 0 v. pkg base gnd ground connection for the output stage. this pad should be connected to the ground plane by vias directly under the device. a short path is required to obtain optimum performance, as well as to provide a good thermal path to the pcb for maximum heat dissipation.
6 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. package drawing
7 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. theory of operation general purpose radio applications RF5110G has seen widespread use in gsm handset applications, but it can also be used as a final transmit pa for general pur- pose radio (fsk, ask). the application schematics in this data sheet outline matching for commonly used frequency bands. matching is shown for 150 mhz, 220 mhz, 450 mhz, and 865 mhz to 928 mhz. the standard 900 mhz gsm evaluation board can be easily converted for these bands, using the values indicated. the 865 mhz to 928 mhz conversion is the most direct, with adjustment required only on output match. the others show changes at input, 1st interstage, 2nd interstage, and output. common components can be used in most cases. the only key component is the choke seen on rf output. during develop- ment of the matches, one goal was to achieve stability (no spurious) into 5:1 output vswr. the 1 h value and construction proved essential in achieving this level of stability. this theory of operation applies to an open loop system utilizing no power control. in the traditional gsm application, power i s sampled at the RF5110G?s output and fed back to a log detect function. dac voltage (v set ) is also input to the log detector. log detector output drives the v apc pin of RF5110G such that output power corresponding to v set is obtained, with constant input power > 0 dbm applied. power can be set over the full range of defined levels, ranging from small signal to compression. in addition, the control loop is used for ramping in accordance with gsm specifications. if power control is used in the system under consideration, most of the open loop constraints covered here will not apply, aside from thermal considerations dis- cussed below. when used in an open loop system, RF5110G should be operated in compression. when running small signal, some variation in gain (and therefore output power) will be seen over temperature extremes between -40 c and 85 c. when operated in com- pression, the impact of this variation is substantially mitigated, making open loop application practical. ?compression? in thi s case is defined where efficiency exceeds 45%. in the graph section of this data sheet, curves in each frequency band are shown for gain/efficiency/junction temperature versus p out /v cc . as indicated in the graphs, high efficiency can be obtained at compressed output power with appropriate choice of supply voltage (v cc ). for example, see the efficiency curves for 450 mhz. operation at 31 dbm shows efficiency = 49% for v cc = 2.8 v. if 32 dbm output is required in design, using v cc = 3.3 v gives 47% efficiency. so, the system designer can choose an appropriate supply voltage which provides high efficiency at target p out . one important detail to consider is voltage level at v apc . as noted earlier, v apc level varies when operating within a power con- trol loop. this voltage controls output power from the pa. in open loop mode, v apc should be set at 2.8 v to ensure consistent output power from RF5110G in volume production. another design consideration is maintaining acceptable junction temperature. in the gsm radio, output power in excess of 34 dbm is common. this is allowable due to the limit on transmit duty cycle and pulse width. the worst case condition sees duty cycle at 50%, with pulse width equal to approximately 2 msec. in this situation, the pa cuts off before junction temperatu re reaches the maximum that would be seen with longer pulse width. for the non?gsm radio, it is assumed pulse width will exceed 2 msec. thus, restrictions must be imposed on allowable maximum output power. the most conservative analysis is used, that for 100% duty cycle. thermal scans have shown r th (thermal resistance) of RF5110G + the evaluation board to be 36 c/w. r th for the evaluation board has been calculated at 10.4 c/w, giving RF5110G r th_jc = 25.6 c/w. data sheet curves show projected junction temperatures (t j ) for each general purpose radio frequency band. r th of RF5110G + the evalu- ation board is taken into account. a conservative goal is t j 150 c when operating at a maximum specified ambient tempera- ture of 85 c. maximum output power will then be bounded by that limit. observing the t j curves in bands from 150 mhz to 928 mhz, one sees that 32 dbm is always at or below 150 c. this shows that the output load line in each match was intention- ally set for high efficiency. to ensure equivalent performance in one?s system, care should be taken to achieve efficiency equa l to or better than that seen in the data. thermal performance can be predicted with a simple calculation at a desired output power: p_dc = v cc x i cc p out (watt) = [10^(p out (dbm) / 10)] / 1000
8 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. dissipated power = p diss = p_dc ? p out r th = r th_jc_RF5110G + r th_system_board (r th_jc_RF5110G = 25.6 c/w) junction temperature @ 85 c ambient = t j = 85 c + p diss x r th efficiency calculation alone may not suffice, as the system board may be substantially thicker than that of the RF5110G evalu- ation board. this will increase r th for the system, and likewise t j . layout considerations are important in repeating RF5110G evaluation board performance in a system design. via arrange- ment underneath the part is critical, as are other via arrangements and supply trace routings (see ?gsm applications? section for the gsm case). layout files for the RF5110G evaluation board can be obtained by contacting rfmd applications/sales. as already stated, output match is a primary consideration in achieving desired performance. in moving from the RF5110G evaluation board to the system board, the first approach would be to implement the same matching topology/values as seen in application schematics. performance on the system board can then be checked, particularly with regard to gain and efficiency at target output power. if needed, matching values can be adjusted to obtain equivalent performance. observing each output match from 150 mhz to 900 mhz, it can be seen that topology takes 1 of 2 possible configurations: c ? l ? c: 150 mhz, 220 mhz, 900 mhz l ? c: 450 mhz other areas which impact response are the 1st and 2nd interstage matches, found at pins 1 and 5/6, respectively. small sig- nal responses for each match are shown in this data sheet. checking response on the system board will verify that input/inter- stage matches are in line (output to some extent as well). this verification can be done by placing sma connectors at the input/output of RF5110G, and observing small signal response. following the guidelines contained within this section should ensure successful implementation of RF5110G in general radio applications. gsm applications the RF5110G is a three-stage device with 32 db gain at full power. therefore, the drive required to fully saturate the output i s +3 dbm. based upon hbt (heterojunction bipolar transistor) technology, the part requires only a single positive 3 v supply to operate to full specification. power control is provided through a single pin interface, with a separate power down control pin . the final stage ground is achieved through the large pad in the middle of the backside of the package. first and second stage grounds are brought out through separate ground pins for isolation from the output. these grounds should be connected directly with vias to the pcb ground plane, and not connected with the output ground to form a so called ?local ground plane? on the top layer of the pcb. the output is brought out through the wide output pad, and forms the rf output signal path. the amplifier operates in near class c bias mode. the final stage is ?deep ab?, meaning the quiescent current is very low. as the rf drive is increased, the final stage self-biases, causing the bias point to shift up and, at full power, draws about 2000 ma. the optimum load for the output stage is approximately 2.6 . this is the load at the output collector, and is created by the series inductance formed by the output bond wires, vias, and microstrip, and 2 shunt capacitors external to the part. the opti- mum load impedance at the rf output pad is 2.6-j1.5 . with this match, a 50 terminal impedance is achieved. the input is internally matched to 50 with just a blocking capacitor needed. this data sheet defines the configuration for gsm operation. the input is dc coupled; thus, a blocking cap must be inserted in series. also, the first stage bias may be adjusted by a resis - tive divider with high value resistors on this pin to v pc and ground. for nominal operation, however, no external adjustment is necessary as internal resistors set the bias point optimally. v cc 1 and v cc 2 provide supply voltage to the first and second stage, as well as provides some frequency selectivity to tune to the operating band. essentially, the bias is fed to this pin through a short microstrip. a bypass capacitor sets the inductance seen by the part, so placement of the bypass cap can affect the frequency of the gain peak. this supply should be bypassed individually with 100 pf capacitors before being combined with v cc for the output stage to prevent feedback and oscillations.
9 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. the rf out pin provides the output power. bias for the final stage is fed to this output line, and the feed must be capable of supporting the approximately 2 a of current required. care should be taken to keep the losses low in the bias feed and output components. a narrow microstrip line is recommended because dc losses in a bias choke will degrade efficiency and power. while the part is safe under cw operation, maximum power and reliability will be achieved under pulsed conditions. the data shown in this data sheet is based on a 12.5% duty cycle and a 600 s pulse, unless specified otherwise. the part will operate over a 3.0 v to 5.0 v range. under nominal conditions, the power at 3.5 v will be greater than +34.5 dbm at +90c. as the voltage is increased, however, the output power will increase. thus, in a system design, the alc (automatic level control) loop will back down the power to the desired level. this must occur during operation, or the device may be dam- aged from too much power dissipation. at 5.0 v, over +38 dbm may be produced; however, this level of power is not recom- mended, and can cause damage to the device. the hbt breakdown voltage is >20 v, so there are no issue with overvoltage. however, under worst-case conditions, with the rf drive at full power during transmit, and the output vswr extremely high, a low load impedance at the collector of the output transistors can cause currents much higher than normal. due to the bipolar nature of the devices, there is no limitation on the amount of current de device will sink, and the safe current densities could be exceeded. high current conditions are potentially dangerous to any rf device. high currents lead to high channel temperatures and may force early failures. the RF5110G includes temperature compensation circuits in the bias network to stabilize the rf transis- tors, thus limiting the current through the amplifier and protecting the devices from damage. the same mechanism works to compensate the currents due to ambient temperature variations. to avoid excessively high currents it is important to control the v apc when operating at supply voltages higher than 4.0 v, such that the maximum output power is not exceeded.
10 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. internal schematic
11 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. application schematic 150 mhz fm band application schematic 220 mhz fm band
12 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. application schematic 450 mhz fm band
13 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. application schematic 865 mhz and 902 mhz to 928 mhz ism bands
14 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. application schematic gsm850 lumped element
15 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. evaluation board schematic gsm900 lumped element
16 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. evaluation board layout board size 2.0? x 2.0? board thickness 0.032?; board material fr-4; multi-layer
17 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. typical test setup notes about testing the RF5110G the test setup shown above includes two attenuators. the 3 db pad at the input is to minimize the effect on the signal genera- tor as a result of switching the input impedance of the pa. when v apc is switched quickly, the resulting input impedance change can cause the signal generator to vary its output signal, either in output level or in frequency. instead of an attenuat or an isolator may also be used. the attenuator at the output is to prevent damage to the spectrum analyzer, and should be sized accordingly to handle the power. it is important not to exceed the rated supply current and output power. when testing the device at higher than nominal supply voltage, the v apc should be adjusted to avoid the output power exceeding +36 dbm. during load-pull testing at the output it is important to monitor the forward power through a directional coupler. the forward power should not exceed +36 dbm, and v apc needs to be adjusted accordingly. this simulates the behavior for the power control loop. to avoid damage, it is recom- mended to set the power supply to limit the current during the burst not to exceed the maximum current rating.
18 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. pcb design requirements pcb surface finish the pcb surface finish used for rfmd?s qualification process is electroless nickel, immersion gold. typical thickness is 3 inch to 8 inch gold over 180 inch nickel. pcb land pattern recommendation pcb land patterns are based on ipc-sm-782 standards when possible. the pad pattern shown has been developed and tested for optimized assembly at rfmd; however, it may require some modifications to address company specific assembly pro- cesses. the pcb land pattern has been developed to accommodate lead and package tolerances. pcb metal land pattern figure 1. pcb metal land pattern (top view)
19 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. pcb solder mask pattern liquid photo-imageable (lpi) solder mask is recommended. the solder mask footprint will match what is shown for the pcb metal land pattern with a 2 mil to 3 mil expansion to accommodate solder mask registration clearance around all pads. the center-grounding pad shall also have a solder mask clearance. expansion of the pads to create solder mask clearance can be provided in the master data or requested from the pcb fabrication supplier. thermal pad and via design the pcb land pattern has been designed with a thermal pad that matches the die paddle size on the bottom of the device. thermal vias are required in the pcb layout to effectively conduct heat away from the package. the via pattern has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies. the via pattern used for the rfmd qualification is based on thru-hole vias with 0.203 mm to 0.330 mm finished hole size on a 0.5 mm to 1.2 mm grid pattern with 0.025 mm plating on via walls. if micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. figure 2. pcb solder mask pattern (top view)
20 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com.
21 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com.
22 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. application schematic small signal response
23 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. tape and reel information carrier tape basic dimensions are based on eia481. the pocket is designed to hold the part for shipping and loading onto smt manufacturing equipment, while protecting the body and the solder terminals from damaging stresses. the individual pocket design can vary from vendor to vendor, but width and pitch will be consistent. carrier tape is wound or placed onto a shipping reel either 330 mm (13 inches) in diameter or 178 mm (7 inches) in diameter. the center hub design is large enough to ensure the radius formed by the carrier tape around it does not put unnecessary stress on the parts. prior to shipping, moisture sensitive parts (msl level 2a-5a) are baked and placed into the pockets of the carrier tape. a cove r tape is sealed over the top of the entire length of the carrier tape. the reel is sealed in a moisture barrier, esd bag, which is placed in a cardboard shipping box. it is important to note that unused moisture sensitive parts need to be resealed in the moisture barrier bag. if the reels exceed the exposure limit and need to be rebaked, most carrier tape and shipping reels are not rated as bakeable at 125c. if baking is required, devices may be baked according to section 4, table 4-1, column 8 of joint industry standard ipc/jedec j-std-033a. the following table provides useful information for carrier tape and reels used for shipping the devices described in this docu - ment. qfn (carrier tape drawing with part orientation) rfmd part number reel diameter inch (mm) hub diameter inch (mm) width (mm) pocket pitch (mm) feed units per reel RF5110Gtr7 7 (178) 2.4 (61) 12 4 single 2500
24 of 24 RF5110G rev a7 ds090521 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com.

▲Up To Search▲

Price & Availability of RF5110G

	To Download RF5110G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .