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[ q j p| 2 . x j s fk t ________________________________________________________________ maxim integrated products 1 ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ? g? ds28ea00 io piob pioa gnd v dd v dd note: schematic shows pio pins wired for sequence-detect function. 1-wire master #1 ds28ea00 io piob px. y microcontroller pioa gnd v dd #2 ds28ea00 io piob pioa gnd v dd #3 ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ?o ?+? 5 rev 2; 4/09 ta5^ak?t?|iaa|-@? !i?|yei tg???[i???4|?|l ^at? ? % ? ? g?? e n b y j n?>i|f? 2 1 9 1 1 ! 9 6 3 ! 2 3 5 : ! )?| *l * 2 1 9 1 1 ! 2 6 3 ! 2 3 5 : ! ) | *l * t 7 n b y j n||a?6? d i j o b / n b y j n . j d / d p n part temp range pin-package ds28ea00u+ -40 c to +85 c 8 sop ds28ea00u+t&r -40 c to +85 c 8 sop mk , -,? ) q c * 0 o ] s p i t*e| v? u ' s ! > ! rt? 2 . x j s f5 n b y j n ! j o u f h s b u f e ! q s p e v d u t - ! j o d /|?* e t 3 9 f b 1 1 r?6? [ q j p| 2 . x j s fk t 2 _______________________________________________________________________________________ absolute maximum ratings electrical characteristics (t a = -40c to +85c.) (note 1) stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specificatio ns is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. io voltage range to gnd ........................................-0.5v to +6v io sink current....................................................................20ma maximum pioa or piob pin current...................................20ma maximum current through gnd pin ..................................40ma operating temperature range ...........................-40c to +85c junction temperature ......................................................+150c storage temperature range .............................-55c to +125c soldering temperature...........................refer to the ipc/jedec j-std-020 specification. parameter symbol conditions min typ max units power supply supply voltage v dd (note 2) 3.0 5.5 v supply current (note 3) i dd v dd = +5.5v 1.5 ma standby current i dds v dd = +5.5v 1.5 a io pin: general data local power 3.0 v dd 1-wire pullup voltage (note 2) v pup parasite power 3.0 5.5 v 1-wire pullup resistance r pup (notes 2, 4) 0.3 2.2 k input capacitance c io (notes 3, 5) 1000 pf input load current i l io pin at v pup 0.1 1.5 a high-to-low switching threshold v tl (notes 3, 6, 7) 0.46 v pup - 1.9v v parasite powered 0.5 input low voltage (notes 2, 8) v il v dd powered (note 3) 0.7 v low-to-high switching threshold (notes 3, 6, 9) v th parasite power 1.0 v pup - 1.1v v switching hysteresis (notes 3, 6, 10) v hy parasite power 0.21 1.7 v output low voltage (note 11) v ol at 4ma 0.4 v standard speed, r pup = 2.2k 5 overdrive speed, r pup = 2.2k 2 recovery time (notes 2, 12) t rec overdrive speed, directly prior to reset pulse; r pup = 2.2k 5 s standard speed 0.5 5.0 rising-edge hold-off time (notes 3, 13) t reh overdrive speed not applicable (0) s standard speed 65 time-slot duration (notes 2, 14) t slot overdrive speed 8 s io pin: 1-wire reset, presence-detect cycle standard speed 480 640 reset low time (note 2) t rstl overdrive speed 48 80 s e t 3 9 f b 1 1 r?6? [ q j p| 2 . x j s fk t _______________________________________________________________________________________ 3 electrical characteristics (continued) (t a = -40c to +85c.) (note 1) parameter symbol conditions min typ max units standard speed 15 60 presence-detect high time t pdh overdrive speed 2 6 s standard speed 1.125 8.1 presence-detect fall time (notes 3, 15) t fpd overdrive speed 0 1.3 s standard speed 60 240 presence-detect low time t pdl overdrive speed 8 24 s standard speed 68.1 75 presence-detect sample time (notes 2, 16) t msp overdrive speed 7.3 10 s io pin: 1-wire write standard speed 60 120 write-zero low time (notes 2, 17) t w0l overdrive speed 6 16 s standard speed 5 15 write-one low time (notes 2, 17) t w1l overdrive speed 1 2 s io pin: 1-wire read standard speed 5 15 - read low time (notes 2, 18) t rl overdrive speed 1 2 - s standard speed t rl + 15 read sample time (notes 2, 18) t msr overdrive speed t rl + 2 s pio pins input low voltage v ilp (note 2) 0.3 v input high voltage (note 2) v ihp v x = max(v pup , v dd ) v x - 1.6 v input load current (note 19) i lp pin at gnd -1.1 a output low voltage (note 11) v olp at 4ma 0.4 v chain-on pullup impedance r co (note 3) 20 40 60 k eeprom programming current i prog (notes 3, 20) 1.5 ma programming time t prog (note 21) 10 ms at +25c 200,000 write/erase cycles (endurance) (notes 22, 23) n cy -40c to +85c 50,000 data retention (notes 24, 25) t dr at +85c (worst case) 10 years temperature converter conversion current i conv (notes 3, 20) 1.5 ma 12-bit resolution (1/16c) 750 11-bit resolution (1/8c) 375 10-bit resolution (1/4c) 187.5 conversion time (note 26) t conv 9-bit resolution (1/2c) 93.75 ms -10c to +85c -0.5 +0.5 conversion error below -10c (note 3) -0.5 +2.0 c converter drift d (note 27) -0.2 +0.2 c e t 3 9 f b 1 1 r?6? [ q j p| 2 . x j s fk t 4 _______________________________________________________________________________________ note 1: specifications at t a = -40c are guaranteed by design and not production tested. note 2: system requirement. note 3: guaranteed by design, characterization, and/or simulation only. not production tested. note 4: maximum allowable pullup resistance is a function of the number of 1-wire devices in the system and 1-wire recovery times. the specified value here applies to parasitically powered systems with only one device and with the minimum 1-wire recovery times. for more heavily loaded systems, local power or an active pullup such as that found in the ds2482-x00, ds2480b, or ds2490 may be required. if longer t rec is used, higher r pup values may be tolerable. note 5: value is 25pf maximum with local power. maximum value represents the internal parasite capacitance when v pup is first applied. if r pup = 2.2k , 2.5s after v pup has been applied, the parasite capacitance does not affect normal communications. note 6: v tl , v th , and v hy are a function of the internal supply voltage, which is a function v dd , v pup , r pup , 1-wire timing, and capacitive loading on io. lower v dd , v pup , higher r pup , shorter t rec , and heavier capacitive loading all lead to lower val- ues of v tl , v th , and v hy . note 7: voltage below which, during a falling edge on io, a logic 0 is detected. note 8: the voltage on io must be less than or equal to v ilmax at all times when the master drives the line to a logic 0. note 9: voltage above which, during a rising edge on io, a logic 1 is detected. note 10: after v th is crossed during a rising edge on io, the voltage on io must drop by at least v hy to be detected as logic 0. note 11: the i-v characteristic is linear for voltages less than +1v. note 12: applies to a single parasitically powered ds28ea00 attached to a 1-wire line. these values also apply to networks of multiple ds28ea00 with local supply . note 13: the earliest recognition of a negative edge is possible at t reh after v th has been reached on the preceding rising edge. note 14: defines maximum possible bit rate. equal to 1/(t w0lmin + t recmin ). note 15: interval during the negative edge on io at the beginning of a presence-detect pulse between the time at which the voltage is 80% of v pup and the time at which the voltage is 20% of v pup . note 16: interval after t rstl during which a bus master is guaranteed to sample a logic 0 on io if there is a ds28ea00 present. minimum limit is t pdhmax + t fpdmax ; the maximum limit is t pdhmin + t pdlmin . note 17: in figure 13 represents the time required for the pullup circuitry to pull the voltage on io up from v il to v th . the actual maximum duration for the master to pull the line low is t w1lmax + t f - and t w0lmax + t f - , respectively. note 18: in figure 13 represents the time required for the pullup circuitry to pull the voltage on io up from v il to the input-high threshold of the bus master. the actual maximum duration for the master to pull the line low is t rlmax + t f . note 19: this load current is caused by the internal weak pullup, which asserts a logic 1 to the piob and pioa pins. the logical state of piob must not change during the execution of the conditional read rom command. note 20: current drawn from io during eeprom programming or temperature conversion interval in parasite-powered mode. the pullup circuit on io during the programming or temperature conversion interval should be such that the voltage at io is greater than or equal to v pupmin . if v pup in the system is close to v pupmin , then a low-impedance bypass of r pup , which can be activated during programming or temperature conversions, may need to be added. the bypass must be activated within 10s from the beginning of the t prog or t conv interval, respectively. note 21: the t prog interval begins t rehmax after the trailing rising edge on io for the last time slot of the command byte for a valid copy scratchpad sequence. interval ends once the devices self-timed eeprom programming cycle is complete and the current drawn by the device has returned from i prog to i l (parasite power) or i dds (local power). note 22: write-cycle endurance is degraded as t a increases. note 23: not 100% production tested. guaranteed by reliability monitor sampling. note 24: data retention is degraded as t a increases. note 25: guaranteed by 100% production test at elevated temperature for a shorter time; equivalence of this production test to data sheet limit at operating temperature range is established by reliability testing. note 26: the t conv interval begins t rehmax after the trailing rising edge on io for the last time slot of the command byte for a valid convert temperature sequence. the interval ends once the devices self-timed temperature conversion cycle is complete and the current drawn by the device has returned from i conv to i l (parasite power) or i dds (local power). note 27: drift data is preliminary and based on a 1000-hour stress test performed on another device with comparable design and fabricated in the same manufacturing process. this test was performed at greater than +85c with v dd = +5.5v. confirmed thermal drift results for this device are pending the completion of a new 1000-hour stress test. electrical characteristics (continued) (t a = -40c to +85c.) (note 1) e t 3 9 f b 1 1 r?6? [ q j p| 2 . x j s fk t _______________________________________________________________________________________ 5 1 io 2, 3, 5 n.c. 4 gnd 6 pioa ( done ) 7 piob ( en ) 8 v dd ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` ` .? e t 3 9 f b 1 1 ? ym?.| ? 1vd ?, e t 3 9 f b 1 1]tj k?]?? 7 5??e s 7 5 ?@ [|?@ 2 . x j s f s p n ?<?] ? s p n ? ? ??h ?+? ??? e h| ?<?]??h|?w+ [<?? 0 vw+tt ???6?|? 5?2 |