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www.irf.com 1 mosfet hexfet power mosfet high frequency dc-dc converters lead-free applications low gate to drain to reduce switching losses fully characterized capacitance including effective coss to simplify design,(see an 1001) fully characterized avalanche voltage and current v dss r ds(on) max i d 200v 0.082 ? 31a

telecom 48v input dc/dc active clamp reset forward converter notes through are on page 11

d 2 pak IRFS31N20DPBF to-220ab irfb31n20dpbf to-262 irfsl31n20dpbf parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 31 i d @ t c = 100c continuous drain current, v gs @ 10v 21 a i dm pulsed drain current 124 p d @t a = 25c power dissipation 3.1 w p d @t c = 25c power dissipation 200 linear derating factor 1.3 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 2.1 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torqe, 6-32 or m3 screw 10 lbf?in (1.1n?m)

irfb/s/sl31n20dpbf 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 200 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.25 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.082 ? v gs = 10v, i d = 18a v gs(th) gate threshold voltage 3.0 ??? 5.5 v v ds = v gs , i d = 250a ??? ??? 25 a v ds = 200v, v gs = 0v ??? ??? 250 v ds = 160v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v parameter min. typ. max. units conditions g fs forward transconductance 17 ??? ??? s v ds = 50v, i d = 18a q g total gate charge ??? 70 107 i d = 18a q gs gate-to-source charge ??? 18 23 nc v ds = 160v q gd gate-to-drain ("miller") charge ??? 33 65 v gs = 10v t d(on) turn-on delay time ??? 16 ??? v dd = 100v t r rise time ??? 38 ??? i d = 18a t d(off) turn-off delay time ??? 26 ??? r g = 2.5 ? t f fall time ??? 10 ??? r d = 5.4 ? , c iss input capacitance ??? 2370 ??? v gs = 0v c oss output capacitance ??? 390 ??? v ds = 25v c rss reverse transfer capacitance ??? 78 ??? pf ? = 1.0mhz c oss output capacitance ??? 2860 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 150 ??? v gs = 0v, v ds = 160v, ? = 1.0mhz c oss eff. effective output capacitance ??? 170 ??? v gs = 0v, v ds = 0v to 160v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 420 mj i ar avalanche current ??? 18 a e ar repetitive avalanche energy ??? 20 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 18a, v gs = 0v t rr reverse recovery time ??? 200 300 ns t j = 25c, i f = 18a q rr reverse recoverycharge ??? 1.7 2.6 c di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 31 124 thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.75 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 r ja junction-to-ambient ??? 40
www.irf.com 3 irfb/s/sl31n20dpbf fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.5v 6.0v 5.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.5v 6.0v 5.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.5v 0.1 1 10 100 1000 5 6 7 8 9 10 11 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 30a
irfb/s/sl31n20dpbf 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 18a v = 40v ds v = 100v ds v = 160v ds
www.irf.com 5 irfb/s/sl31n20dpbf fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 5 10 15 20 25 30 t , case temperature ( c) i , drain current (a) c d
irfb/s/sl31n20dpbf 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 200 400 600 800 1000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 7.3a 15a 18a
www.irf.com 7 irfb/s/sl31n20dpbf p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets
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irfb/s/sl31n20dpbf 8 www.irf.com dimensions are shown in millimeters (inches) !"! example: in the assembly line "c" t his is an irf1010 lot code 1789 as s e mb le d on ww 19, 1997 part number assembly lot code dat e code year 7 = 1997 line c week 19 logo rect ifier int e rnat ional note: "p" in assembly line position indicates "lead-free" lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copack 1- gate 2- collector 3- emitter 4- collector
www.irf.com 9 irfb/s/sl31n20dpbf n ote: "p " in as s embly line pos ition indicates "l ead-f ree" f530s t h is is an ir f 530s wit h lot code 8024 as s e mb le d on ww 02, 2000 in the assembly line "l" as s e mb l y lot code in t e r n at ional r e ct if ie r logo part number dat e code ye ar 0 = 2000 we ek 02 line l f 530s a = assembly site code week 02 p = des ignate s lead-free product (optional) rectifier in t e r n at ion al logo lot code as s e mb l y ye ar 0 = 2000 date code part number
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dimensions are shown in millimeters (inches)
irfb/s/sl31n20dpbf 10 www.irf.com as s e mb l y lot code rectifier int ernat ional as s e mb le d on ww 19, 1997 note: "p" in as s embly line pos ition indicates "l ead-f ree" in the assembly line "c" logo t his is an irl3103l lot code 1789 e xamp l e : line c dat e code week 19 year 7 = 1997 part number part number logo lot code assembly int ernat ional rect ifier product (optional) p = des ignat es lead-f ree a = assembly site code we e k 19 ye ar 7 = 1997 dat e code or to-262 part marking information to-262 package outline igbt 1- gate 2- collector 3- emitter
www.irf.com 11 irfb/s/sl31n20dpbf repetitive rating; pulse width limited by max. junction temperature. i sd 18a, di/dt 110a/s, v dd v (br)dss , t j 175c
starting t j = 25c, l = 3.8mh r g = 25 ? , i as = 18a. pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss this is only applied to to-220ab package this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/04 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. d 2 pak tape & reel infomation dimensions are shown in millimeters (inches)
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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