features l high sensitivity l low dark current l high linearity applications l analytical equipment l optical measurement equipment, etc. photodiode si photodiode for visible to ir, general-purpose photometry s2387 series general ratings / absolute maximum ratings absolute maximum ratings package active area size effective active area reverse voltage v r max. operating temperature topr storage temperature tstg type no. dimensional outline/ window material * (mm) (mm) (mm 2 ) (v) (c) (c) s2387-16r ? /r 2.7 15 1.1 5.9 6.4 s2387-33r ? /r 6 7.6 2.4 2.4 5.7 s2387-66r ? /r 8.9 10.1 5.8 5.8 33 s2387-1010r ? /r 15 16.5 10 10 100 S2387-130R ? /r 3.0 40 1.2 29.1 35 30 -20 to +60 -20 to +80 electrical and optical characteristics (typ. ta=25 c, unless otherwise noted) photo sensitivity s (a/w) short circuit current isc 100 lx spectral response range peak sensi- tivity wave- length p p gap led he-ne laser min. typ. temp. coeffi- cient of i d t cid shunt resistance rsh v r =10 mv nep v r =0 v = p dark current i d v r =10 mv max. rise time tr v r =0 v r l =1 k ? terminal capaci- tance ct v r =0 v f=10 khz min. typ. type no. (nm) (nm) 560 nm 633 nm (a) (a) (pa) (times/ c) (s) (pf) (g ? )(g ? ) (w/hz 1/2 ) s2387-16r 4.4 6.0 s2387-33r 4.4 5.8 5 1.8 730 2 50 9.9 10 -16 s2387-66r 24 31 50 10 4300 0.2 10 2.2 10 -15 s2387-1010r 68 91 200 33 12000 0.05 5 3.1 10 -15 S2387-130R 320 to 1100 960 0.58 0.33 0.37 25 32 100 1.12 11 5000 0.1 20 1.6 10 -15 * window material, r: resin coating 1
si photodiode s2387 series ambient temperature (?c) shunt resistance (typ. v r =10 mv) 100 k ? 1 m ? 10 m ? 100 m ? 1 g ? 10 t ? - 20 0 20 40 60 s2387-16r/33r S2387-130R s2387-1010r 80 10 g ? 100 g ? 1 t ? 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 200 400 600 800 1000 wavelength (nm) photo sensitivity (a/w) (typ. ta=25 ? c) spectral response photo sensitivity temperature characteristic kspdb0115ea kspdb0058eb kspdb0116ea kspdb0117ea - 0.5 0 +0.5 +1.0 +1.5 200 400 600 800 1000 wavelength (nm) temperature coefficient ( % / ? c) (typ.) rise time vs. load resistance dark current vs. reverse voltage shunt resistance vs. ambient temperature kspdb0118ea load resistance ( ? ) rise time (typ. ta=25 ? c, v r =0 v) 10 ns 100 ns 1 s 10 s 100 s 1 ms 10 2 10 3 10 4 10 5 s2387-16r/33r S2387-130R s2387-1010r reverse voltage (v) dark current (typ. ta=25 ? c) 10 fa 100 fa 1 pa 10 pa 100 pa 1 na 0.01 0.1 1 10 100 s2387-16r/33r s2387-66r s2387-1010r S2387-130R 2
si photodiode s2387 series 8.5 0.2 2.7 0.1 1.5 0.1 6.2 anode terminal mark 13.5 0.13 15 0.15 0.45 active area hole (2 ) 0.8 0.5 lead photosensitive surface resin coating may extend a maximum of 0.1 mm above the upper surface of the package. 7.6 0.1 6.0 0.1 active area 2.0 0.1 10.5 0.75 0.35 6.6 0.3 4.5 0.2 5.0 0.3 anode terminal mark 0.5 lead photosensitive surface resin coating may extend a maximum of 0.1 mm above the upper surface of the package. 10.1 0.1 8.9 0.1 active area 2.0 0.1 10.5 0.75 0.3 9.2 0.3 7.4 0.2 8.0 0.3 anode terminal mark 0.5 lead photosensitive surface resin coating may extend a maximum of 0.1 mm above the upper surface of the package. anode terminal mark 0.5 lead photosensitive surface 16.5 0.2 15.0 0.15 active area 2.15 0.1 10.5 0.9 0.3 15.1 0.3 12.5 0.2 13.7 0.3 resin coating may extend a maximum of 0.1 mm above the upper surface of the package. dimensional outlines (unit: mm) ? s2387-16r ? s2387-33r kspda0106ea kspda0108ea kspda0112ea kspda0110ea ? s2387-66r ? s2387-1010r 3
hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?2006 hamamatsu photonics k.k. si photodiode s2387 series cat. no. kspd1033e03 aug. 2006 dn 0.45 lead active area 13 3.2 0.2 0.4 29.1 33.1 0.7 40.0 0.7 3.0 - 0.3 + 0 33.1 0.7 1.2 photosensitive surface resin coating may extend a maximum of 0.1 mm above the upper surface of the package. kspda0117ea S2387-130R 4
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