1/9 september 2004 sts5dpf20l p-channel 20v - 0.045 ? - 5a so-8 stripfet? ii mosfet table 1: general features typical r ds(on) = 0.045 ? conduction losses reduced switching losses reduced low threshold drive standard outline for easy automated surface mount assembly description this mosfet is the latest development of stmi- croelectronics unique ?single feature size?? strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications dc/dc converters battery management in nomadic equipment power management in cellular phones dc motor drive table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d sts5dpf20l 20 v < 0.055 ? 5 a so-8 part number marking package packaging sts5dpf20l s5dpf20l so-8 tape & reel rev. 2
sts5dpf20l 2/9 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area note: for the p-channel mosfet actual polarity of voltages and current has to be reversed table 4: thermal data electrical characteristics (t case =25c unless otherwise specified) table 5: on/off table 6: dynamic (1) pulsed: pulse duration = 300 s, duty cycle 1.5% symbol parameter value unit v ds drain-source voltage (v gs = 0) 20 v v dgr drain-gate voltage (r gs = 20 k ? ) 20 v v gs gate- source voltage 16 v i d drain current (continuous) at t c = 25c single operating 5a i d drain current (continuous) at t c = 100c single operating 4a i dm ( ) drain current (pulsed) 20 a p tot total dissipation at t c = 25c dual operating total dissipation at t c = 25c single operating 1.6 2 w w t j t stg operating junction temperature storage temperature 150 -55 to 150 c c rthj-case thermal resistance junction-case single operating dual operating 62.5 78 c/w c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter test conditions min. typ. max unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 20 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 16v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 11.62.5v r ds(on) static drain-source on resistance v gs = 10 v, i d = 2.5 a v gs = 4.5 v, i d = 2.5 a 0.045 0.070 0.055 0.075 ? ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 2.5 a 10 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 16v, f = 1 mhz, v gs = 0 1350 490 130 pf pf pf
3/9 sts5dpf20l electrical characteristics(continued) table 7: switching on table 8: switching off table 9: source-drain diodef (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15 v, i d = 2 a, r g = 4.7 ?, v gs = 4.5 v (see figure 15)) 25 35 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 24 v, i d = 4 a, v gs = 5 v (see, figure 18) 12.5 5 3 16 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 15 v, i d = 2.5 a, r g = 4.7 ?, v gs = 4.5 v (see, figure 15) 125 35 ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 5a i sdm (2) source-drain current (pulsed) 20 a v sd (1) forward on voltage i sd = 5 a, v gs = 0 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a, di/dt = 100 a/s v dd = 15v, t j = 150c (see, figure 16) 45 36 1.6 ns nc a
sts5dpf20l 4/9 figure 3: safe operating figure 4: output characteristics figure 5: transconductance figure 6: thermal impedance figure 7: transfer characteristics figure 8: static drain-source on resistance
5/9 sts5dpf20l figure 9: gate charge vs gate-source voltage figure 10: normalized gate thereshlod volt- age vs temperature figure 11: source-drain diode forward char- acteristics figure 12: capacitances variations figure 13: normalized on resistance vs tem- perature
sts5dpf20l 6/9 figure 14: unclamped inductive load test cir- cuit figure 15: switching times test circuit for resistive load figure 16: test circuit for inductive load switching and diode recovery times figure 17: unclamped inductive wafeform figure 18: gate charge test circuit
7/9 sts5dpf20l dim. mm. inch min. typ max. min. typ. max. a 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.25 0.5 0.010 0.019 c1 45 (typ.) d 4.8 5.0 0.188 0.196 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.14 0.157 l 0.4 1.27 0.015 0.050 m 0.6 0.023 s 8 (max.) so-8 mechanical data
sts5dpf20l 8/9 table 10: revision history date revision description of changes 10-sep-2004 2 complete version
9/9 sts5dpf20l information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america
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