2006-12-04 rev 1.3 page 1 bss 209pw optimos ? ? ? ? -p small-signal-transistor product summary v ds -20 v r ds ( on ) 550 m ? i d -0.58 a feature ? p-channel ? enhancement mode ? super logic level (2.5 v rated) ? 150c operating temperature ? avalanche rated ? d v /d t rated pg-sot-323 1 3 vso05561 2 gate pin1 drain pin 3 source pin 2 marking x3s type package tape and reel bss 209pw pg-sot-323 l6327 :3000pcs/r. maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d -0.58 -0.46 a pulsed drain current t a =25c i d puls -2.3 avalanche energy, single pulse i d =-0.58 a , v dd =-10v, r gs =25 ? e as 3.5 mj reverse diode d v /d t i s =-0.58a, v ds =-16v, d i /d t =200a/s, t jmax =150c d v /d t -6 kv/s gate source voltage v gs 12 v power dissipation t a =25c p tot 0.52 w operating and storage temperature t j , t st g -55... +150 c iec climatic category; din iec 68-1 55/150/56
2006-12-04 rev 1.3 page 2 bss 209pw thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - soldering point r thjs - - 120 k/w smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - - 240 160 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0v, i d =-250a v (br)dss -20 - - v gate threshold voltage, v gs = v ds i d =-3.5a v gs(th) -0.6 -0.9 -1.2 zero gate voltage drain current v ds =-20v, v gs =0, t j =25c v ds =-20v, v gs =0, t j =150c i dss - - -0.1 -10 -1 -100 a gate-source leakage current v gs =-12v, v ds =0 i gss - -10 -100 na drain-source on-state resistance v gs =-2.5v, i d =-0.46a r ds(on) - 563 900 m drain-source on-state resistance v gs =-4.5, i d =-0.58a r ds(on) - 369 550 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air; t 10 sec.
2006-12-04 rev 1.3 page 3 bss 209pw electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds i d * r ds(on)max i d =-0.46a 0.87 1.74 - s input capacitance c iss v gs =0, v ds =-15v, f =1mhz - 89.9 - pf output capacitance c oss - 40.1 - reverse transfer capacitance c rss - 31.5 - turn-on delay time t d ( on ) v dd =-10v, v gs =-4.5v, i d =-0.58a, r g =6 ?
2006-12-04 rev 1.3 page 4 bss 209pw 1 power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 w 0.85 bss 209pw p tot 2 drain current i d = f ( t a ) parameter: | v gs |
2006-1 2-04 rev 1.3 page 5 bss 209pw 5 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 1 2 3 4 5 6 7 8 v 10 - v ds 0 1 2 a 4 - i d vgs = -1.8v vgs = -2.2v vgs = -2.5v vgs = -2v vgs = -2.8v vgs = -3.5v vgs = -3v vgs = -4v vgs = -4.5v vgs = -7v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 a 2 - i d 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1 r ds(on) vgs = -2.2v vgs = -2.5v vgs = - 3v vgs= - 3.5v vgs = - 4v vgs = - 4.5v vgs= - 5v vgs= - 6v vgs = - 7v 7 typ. transfer characteristics i d = f ( v gs ); | v ds | 2 x | i d | x r ds(on)max parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 v 3.5 - v gs 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 a 6 - i d 8 typ. forward transconductance g fs = f( i d ); t j =25c parameter: t p = 80 s 0 1 2 3 4 a 6 - i d 0 0.5 1 1.5 2 2.5 3 s 4 gfs
2006-12-04 rev 1.3 page 6 bss 209pw 9 drain-source on-resistance r ds(on) = f( t j ) parameter: i d = -0.58 a, v gs = -4.5 v -60 -20 20 60 100 c 160 t j 250 300 350 400 450 500 550 600 m 700 r ds(on) typ. 98% 10 gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds , i d = -3.5 a -60 -20 20 60 100 c 160 t j 0 0.2 0.4 0.6 0.8 1 v 1.4 v gs(th) 2% typ. 98% 11 typ. capacitances c = f ( v ds ) parameter: v gs =0, f =1 mhz 0 5 10 v 20 - v ds 1 10 2 10 3 10 pf c crss coss ciss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 v -3 v sd -2 -10 -1 -10 0 -10 1 -10 a bss 209pw i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
2006-12-04 rev 1.3 page 7 bss 209pw 13 typ. avalanche energy e as = f ( t j ), par.: i d = -0.58 a v dd = -10 v, r gs = 25 25 50 75 100 c 150 t j 0 0.5 1 1.5 2 2.5 3 mj 4 e as 14 typ. gate charge | v gs | = f ( q gate ) parameter: i d = -0.58 a pulsed 0 0.5 1 1.5 2 nc 3 | q gate | 0 1 2 3 4 5 6 7 8 9 10 v 12 - v gs 0.2 vds max 0.5 vds max 0.8 vds max 15 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j -18 -18.5 -19 -19.5 -20 -20.5 -21 -21.5 -22 -22.5 -23 -23.5 v -24.5 bss 209pw v (br)dss
2006-1 2-04 rev 1.3 page 8 bss 209pw published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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