1 3 2 absolute maximum ratings ( tj = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage sine wave, 50 to 60 hz 800 v i t(rms) r.m.s on-state current t j = 110 c, full sine wave 1 .0 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 10 a i 2 t i 2 t for fusing t p = 10ms 0 .41 a 2s pgm peak gate power dissipation 1 w p g(av) average gate power dissipati o 0.1 w i gm peak gate current 1 a t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c may ., 20 10 . rev.1 1/6 tn1a80 sensitive triac features repetitive peak off-state voltage : 800v r.m.s on-state current ( i t(rms) = 1 a ) high commutation dv/dt general description this device is suit able for low po wer ac switching applicat ion, phase control application such a s fan speed and temperature modulation control, lighting co ntrol and static switchin g relay where high sensi- tivity is required in all four quadrants. i t(rms) = 1a i tsm = 10a v drm = 8 00v to-92 copyright @ apollo electron co., ltd. all rights reserved. 3.t2 2 .gate 1.t1 symbol this device may substitute for z0107ma, BT131, bcr1am-12 series.
electrical characteristics (tj=25c unless otherwise specified) ratings symbol items conditions unit min. typ. max. repetitive peak off-state v = v i d drm , single phase, half wave drm current - - 0.5 ma v tm peak on-state voltage i tm = 1 a, tp=380? - -1.6v i + gt1 i - - 10 - -
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?? ~~~ i - gt1 ii - - 10 gate trigger current v d = 12 v, r =100 l ma i - gt3 iii - - 10 i + gt3 iv ? - - 30 v + gt1 i --1.8 v - gt1 , , - - 1.8 v gate trigger voltage v d = 12 v, r l =100 v - gt3 iii --1.8 v + gt3 iv --2.0 v gd non-trigger gate voltage v d =1/2 v drm 0.1 - - v critical rate of rise off-state tj = 110 c dv/dt - - v / ? voltage v d =2/3 v drm 5 i h holding current v d =12v, i t =0.1a - - 25 m a tn1a8 2/6
3/6 tn1a80 -50 0 50 100 150 0.1 1 10 v gt (t o c) v + gt1 v _ gt1 v + gt3 v _ gt3 v gt (25 o c) junction temperature [ o c] 10 0 10 1 10 2 0 2 4 6 8 10 12 60hz 50hz surge on-state current [a] time (cycles) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 40 50 60 70 80 90 100 110 120 130 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o allowable case temperature [ o c] rms on-state current [ a] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.3 0.6 0.9 1.2 1.5 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o power dissipation [w] rms on-state current [ a] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10 -1 10 0 10 1 t j = 125 o c t j = 25 o c on-state current [a] on-state voltage [v] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 v gd (0.2v) 25 i + gt3 i gm (1 a) 25 i + gt1 i _ gt1 i _ gt3 p g (av) (0.1w) p gm (1w) v gm (6v) gate voltage [v] gate current [ma] fig 1. gate characteristics fig 2. on-state voltage fig 3. on state current vs. maximum power dissipation fig 4. on state current vs. allowable case temperature fig 5. surge on-sta te current rating ( non-repetitive ) fig 6. gate trigger voltage vs. junction temperature 2 360 : conduction angle 2 360 : conduction angle
tn1a80 4/6 10 -2 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 r (j-c) r (j-a) transient thermal impedance [ o c/w] time (sec) -50 0 50 100 150 0.1 1 10 i gt (t o c) i gt (25 o c) i + gt3 i + gt1 i _ gt1 i _ gt3 junction temperature [ o c] fig 8. transient thermal impedance fig 7. gate trigger current vs. junction temperature
dim. mm inch min. typ. max. min. typ. max. a 4.2 0.165 b 3.7 0.146 c 4.43 4.83 0.174 0.190 d 14.07 14.87 0.554 0.585 e 0.4 0.016 f 4.43 4.83 0.174 0.190 g 0.45 0.017 h2 . 5 4 0 . 1 0 0 i2 . 5 4 0 . 1 0 0 j 0.33 0.48 0.013 0.019 tn1a80 5/6 to-92 package dimension 1. t1 2. gate 3. t2 a b c g e f d h j 1 2 3 i
dim. mm inch min. typ. max. min. typ. max. a 4.2 0.165 b 3.7 0.146 c 4.43 4.83 0.174 0.190 d 14.07 14.87 0.554 0.585 e 0.4 0.016 f 4.43 4.83 0.174 0.190 g 0.45 0.017 h2 . 5 4 0 . 1 0 0 i2 . 5 4 0 . 1 0 0 j 0.33 0.48 0.013 0.019 k 4.5 5.5 0.177 0.216 l 7.8 8.2 0.295 0.323 m 1.8 2.2 0.070 0.086 n 1.3 1.7 0.051 0.067 to-92 package dimension, forming 1. t1 2. gate 3. t2 6/6 tn1a8 0 a e g h c b d f i j 1 2 3 k l m n
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