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  ds30401 rev. 2 - 2 1 of 3 ddtc (lo-r1) u www.diodes.com  diodes incorporated ddtc (lo-r1) u npn pre-biased 100 ma sot-323 surface mount transistor  epitaxial planar die construction  complementary pnp types available (ddta)  built-in biasing resistors  lead free product features maximum ratings @ t a = 25  c unless otherwise specified a m j l e d b c h k g in gnd out 3 2 1 mechanical data  case: sot-323, molded plastic  case material - ul flammability rating 94v-0  moisture sensitivity: level 1 per j-std-020a  terminals: finish - matte tin (note 1) solderable per mil-std-202, method 208  terminal connections: see diagram  marking: date code and marking code (see diagrams & page 2)  weight: 0.006 grams (approx.)  ordering information (see page 2) (2) in r 1 r 2 gnd (1) out (3) sot-323 dim min max a 0.25 0.40 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.20 1.40 h 1.80 2.20 j 0.0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.18  0  8  all dimensions in mm characteristic symbol value unit supply voltage, (3) to (1) v cc 50 v input voltage, (2) to (1) ddtc122lu ddtc142ju v in -5 to +6 -5 to +6 v input voltage, (1) to (2) ddtc122tu DDTC142TU v ebo (max) 5v output current all i c 100 ma power dissipation (note 2) p d 200 mw thermal resistance, junction to ambient air (note 2) r  ja 625  c/w operating and storage and temperature range t j ,t stg -55 to +150  c p/n r1 (nom) r2 (nom) marking ddtc122lu ddtc142ju ddtc122tu DDTC142TU 0.22k  0.47k  0.22k  0.47k  10k  10k  open open n81 n82 n83 n84 note: 1. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for availabilit y and minimum order details. 2. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. t c u d o r p w e n
ds30401 rev. 2 - 2 2 of 3 ddtc (lo-r1) u www.diodes.com * transistor - for reference only electrical characteristics r1, r2 types @ t a = 25  c unless otherwise specified characteristic symbol min typ max unit test condition input voltage ddtc122lu ddtc142ju v l(off) 0.3 0.3  v v cc = 5v, i o = 100  a ddtc122lu ddtc142ju v l(on)  2.0 2.0 v v o = 0.3v, i o = 20ma v o = 0.3v, i o = 20ma output voltage v o(on)  0.3v v i o /i l = 5ma/0.25ma input current ddtc122lu ddtc142ju i l  28 13 ma v i = 5v output current i o(off)  0.5  a v cc = 50v, v i = 0v dc current gain ddtc122lu ddtc142ju g l 56 56  v o = 5v, i o = 10ma gain-bandwidth product* f t  200  mhz v ce = 10v, i e = 5ma, f = 100mhz electrical characteristics r1-only @ t a = 25  c unless otherwise specified * transistor - for reference only characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo 50  v i c = 50  a collector-emitter breakdown voltage bv ceo 40  v i c = 1ma emitter-base breakdown voltage ddtc122tu DDTC142TU bv ebo 5   v i e = 50  a i e = 50  a collector cutoff current i cbo  0.5  a v cb = 50v emitter cutoff current ddtc122tu DDTC142TU i ebo    0.5 0.5  a v eb = 4v collector-emitter saturation voltage v ce(sat)  0.3 v i c = 5ma, i b = 0.25ma dc current transfer ratio ddtc122tu DDTC142TU h fe 100 100 250 250 600 600  i c = 1ma, v ce = 5v gain-bandwidth product* f t  200  mhz v ce = 10v, i e = -5ma, f = 100mhz ordering information device packaging shipping ddtc122lu-7 sot-323 3000/tape & reel ddtc142ju-7 sot-323 3000/tape & reel ddtc122tu-7 sot-323 3000/tape & reel DDTC142TU-7 sot-323 3000/tape & reel marking information xxx ym xxx = product type marking code see sheet 1 diagrams ym = date code marking y = year ex: p = 2003 m = month ex: 9 = september date code key year 2002 2003 2004 2005 2006 2007 2008 2009 code nprst uvw month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd (note 3) notes: 1. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for availabilit y and minimum order details. 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. t c u d o r p w e n
ds30401 rev. 2 - 2 3 of 3 ddtc (lo-r1) u www.diodes.com -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g . 1 power deratin g curve p , power dissipation (mw) d t c u d o r p w e n


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