TC1301 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 1 / 6 low noise and medium power gaas fets features low noise figure: nf = 0.8 db typical at 12 ghz photo enlargement high associated gain: ga = 10 db typical at 12 ghz high dynamic range: 1 db compression power p -1 = 24.5 dbm at 12 ghz breakdown voltage: bv dgo 9 v lg = 0.25 m, wg = 600 m all-gold metallization for high reliability tight vp ranges control high rf input power handling capability 100 % dc tested description the TC1301 is a gaas pseudomorphic high electron mobility transistor (phemt) chip, which has very low noise figure, high associated gain and high dynamic range. the device can be used in circuits up to 30 ghz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. all devices are 100% dc tested to assure consistent quality. all bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. electrical specifications (t a =25 c) symbol conditions min typ max unit nf noise figure at v ds = 4 v, i ds = 50 ma, f = 12ghz 0.8 1.0 db g a associated gain at v ds = 4 v, i ds = 50 ma, f = 12ghz 9 10 db p 1db output power at 1db gain compression point , f = 12ghz v ds = 6 v, i ds = 80 ma 23.5 24.5 dbm g l linear power gain, f = 12ghz ,v ds = 6 v, i ds = 80 ma 9 10 db i dss saturated drain-source current at v ds = 2 v, v gs = 0 v 180 ma g m transconductance at v ds = 2 v, v gs = 0 v 200 ms v p pinch-off voltage at v ds = 2 v, i d = 1.2 ma -1.0* volts bv dgo drain-gate breakdown voltage at i dgo =0.3 ma 9 12 volts r th thermal resistance 60 c/w note: * for the tight control of the pinch-off voltage . TC1301?s are divided into 3 groups: (1) TC1301p0710 : vp = -0.7v to -1.0v (2) TC1301p0811 : vp = -0.8v to -1.1v (3) TC1301p0912 : vp = -0.9v to -1.2v in addition, the customers may specify their requirements.
TC1301 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 2 / 6 sg s g s g s d d d 760 12 290 12 absolute maximum ratings (t a =25 c) typical noise parameters (t a =25 c) v ds = 4 v, i ds = 50 ma symbol parameter rating v ds drain-source voltage 7.0 v v gs gate-source voltage -3.0 v i ds drain current i dss i gs gate current 600 a p in rf input power, cw 24 dbm p t continuous dissipation 800 mw t ch channel temperature 175 c t stg storage temperature - 65 c to +175 c opt frequency (ghz) nf opt (db) g a (db) mag ang rn/50 2 0.36 19.7 0.88 15 0.28 4 0.48 16.6 0.74 39 0.18 6 0.59 14.3 0.62 64 0.15 8 0.70 12.7 0.55 92 0.12 10 0.78 11.7 0.50 120 0.09 12 0.85 10.9 0.49 148 0.06 14 0.98 10.4 0.50 174 0.04 16 1.12 9.8 0.51 -162 0.04 18 1.27 9.0 0.54 -141 0.07 chip dimensions chip thickness: 100 drain pad: 80 x 70 source pad: 75 x 80
TC1301 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 3 / 6 typical scattering parameters (t a =25 c ) v ds = 4 v, i ds = 50 ma frequency s11 s21 s12 s22 (ghz) mag ang mag ang mag ang mag ang 2 0.8504 -80.07 9.9111 129.43 0.0557 48.67 0.3868 -68.29 3 0.7843 -103.76 7.8038 115.14 0.0659 38.99 0.3487 -88.15 4 0.7445 -120.17 6.3123 105.04 0.0713 33.48 0.3277 -101.61 5 0.7206 -132.00 5.2595 97.31 0.0745 30.31 0.3178 -111.02 6 0.7058 -140.93 4.4944 91.01 0.0767 28.54 0.3147 -117.84 7 0.6961 -147.93 3.9201 85.60 0.0785 27.63 0.3159 -122.98 8 0.6897 -153.62 3.4764 80.80 0.0800 27.27 0.3198 -127.02 9 0.6853 -158.39 3.1248 76.43 0.0814 27.29 0.3256 -130.30 10 0.6822 -162.46 2.8405 72.38 0.0828 27.56 0.3327 -133.08 11 0.6800 -166.03 2.6065 68.56 0.0843 28.01 0.3406 -135.50 12 0.6785 -169.21 2.4110 64.93 0.0858 28.56 0.3490 -137.67 13 0.6776 -172.07 2.2456 61.46 0.0875 29.19 0.3577 -139.65 14 0.6769 -174.69 2.1042 58.11 0.0892 29.86 0.3667 -141.49 15 0.6766 -177.11 1.9821 54.87 0.0910 30.55 0.3756 -143.23 16 0.6765 -179.36 1.8759 51.72 0.0928 31.23 0.3845 -144.89 17 0.6766 178.52 1.7827 48.65 0.0948 31.89 0.3933 -146.47 18 0.6768 176.52 1.7005 45.65 0.0969 32.53 0.4020 -148.00 * the data does not include gate, drain and source bond wires. 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 18ghz swp min 2ghz s11 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75 -60 -45 -30 -15 swp max 18 ghz swp min 2 ghz mag max 0.1 0.01 per div s12 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75 -60 -45 -30 -15 swp max 18 ghz swp min 2 ghz mag max 10 2 per div s21 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 18ghz swp min 2ghz s22
TC1301 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 4 / 6 typical scattering parameters (t a =25 c ) v ds = 6 v, i ds = 80 ma frequency s11 s21 s12 s22 (ghz) mag ang mag ang mag ang mag ang 2 0.8511 -83.76 10.1160 128.27 0.0446 48.15 0.3787 -56.54 3 0.7902 -107.47 7.8891 114.27 0.0523 39.06 0.3349 -72.15 4 0.7549 -123.54 6.3492 104.51 0.0564 34.17 0.3133 -82.94 5 0.7342 -134.97 5.2766 97.09 0.0590 31.58 0.3059 -90.91 6 0.7214 -143.52 4.5034 91.05 0.0609 30.31 0.3072 -97.18 7 0.7133 -150.20 3.9260 85.88 0.0626 29.84 0.3138 -102.35 8 0.7078 -155.61 3.4814 81.28 0.0641 29.86 0.3237 -106.81 9 0.7041 -160.12 3.1301 77.07 0.0655 30.19 0.3356 -110.76 10 0.7015 -163.98 2.8465 73.16 0.0671 30.73 0.3485 -114.34 11 0.6998 -167.36 2.6134 69.46 0.0686 31.38 0.3620 -117.64 12 0.6986 -170.36 2.4188 65.92 0.0703 32.10 0.3757 -120.71 13 0.6978 -173.08 2.2542 62.52 0.0720 32.85 0.3893 -123.59 14 0.6973 -175.55 2.1134 59.23 0.0738 33.60 0.4027 -126.31 15 0.6971 -177.85 1.9919 56.03 0.0756 34.33 0.4157 -128.89 16 0.6971 -179.98 1.8860 52.90 0.0775 35.03 0.4283 -131.35 17 0.6973 178.01 1.7930 49.83 0.0795 35.70 0.4404 -133.69 18 0.6976 176.11 1.7109 46.82 0.0816 36.32 0.4520 -135.92 *the data does not include gate, drain and source bond wires. small signal model, v ds = 4 v, i ds = 50 ma 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 18ghz swp min 2ghz s11 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75 -60 -45 -30 -15 swp max 18 ghz swp min 2 ghz mag max 0.09 0.03 per div s12 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75 -60 -45 -30 -15 swp max 18 ghz swp min 2 ghz mag max 15 5 per div s21 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 18ghz swp min 2ghz s22
TC1301 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 5 / 6 schemati cgs cgd cds rg rd rds ri rs gm t lg ld ls parameters lg 0.057 nh rs 1.66 ohm rg 2.08 ohm ls 0.019 nh cgs 0.959 pf cds 0.167 pf ri 5.78 ohm rds 93.2 ohm cgd 0.074 pf rd 1.358 ohm gm 284.0 ms ld 0.038 nh t 5.54 psec small signal model, v ds = 6 v, i ds = 80 ma schemati cgs cgd cds rg rd rds ri rs gm t lg ld ls parameters lg 0.056 nh rs 1.808 ohm rg 1.954 ohm ls 0.016 nh cgs 1.33 pf cds 0.185 pf ri 5.58 ohm rds 90.1 ohm cgd 0.052 pf rd 1.422 ohm gm 315 ms ld 0.036 nh t 5.63 psec large signal model , v ds = 6 v, i ds = 80 ma
TC1301 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 6 / 6 schematic tom2 model parameters parameters parameters vto -0.43283 v vmax 0.5 v alpha 9.54 cgd 0.0554 pf beta 0.49 cgs 6.018 pf gamma 0.0416 cds 0.1599 pf delta 0.3091 ris 5.755 ohm q 0.84 rid 0.001 ohm ng 0.1 vbr 9 v nd 0.01 rdb 94.333 ohm tau 5.558 ps cbs 0.0463 pf rg 2.0833 ohm tnom 25 c rd 1.358 ohm ls 0.01893 nh rs 1.662 ohm lg 0.0576 nh is 1e-11 ma ld 0.038 nh n 1 afac 1 vbi 1 v nfing 1 vdelta 0.2 v chip handling die attachment: conductive epoxy or eutectic die attach is recommended. eutectic die attach can be accomplished with au-sn (80%au-20%sn) perform at stage temperature: 290 c 5 c; handling tool: tweezers; time: less than 1min. wire bonding: the recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. stage temperature: 220 c to 250 c; bond tip temperature: 150 c; bond force: 20 to 30 gms depending on size of wire and bond tip temperature. handling precautions: the user must operate in a clean, dry environment. care should be exercised during handling avoid damage to the devices. electrostatic discharge (esd) precautions should be observed at all stages of storage, handling, assembly, and testing. the static discharge must be less than 300v. cgs cgd cds rg rd rdb ris rs id lg ld ls cbs rid
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