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d a t a sh eet product speci?cation file under discrete semiconductors, sc08a august 1986 discrete semiconductors blw50f hf/vhf power transistor
august 1986 2 philips semiconductors product speci?cation hf/vhf power transistor blw50f description n-p-n silicon planar epitaxial transistor primarily intended for use in class-a, ab and b operated, industrial and military transmitters in the h.f. and v.h.f. band. resistance stabilization provides protection against device damage at severe load mismatch conditions. matched h fe groups are available on request. it has a 3/8" flange envelope with a ceramic cap. all leads are isolated from the flange. quick reference data r.f. performance note 1. at 65w p.e.p. mode of operation v ce v f mhz p l w g p db h dt % i c a i c(zs) ma d 3 db t h c s.s.b. (class-a) 45 1,6 - 28 0 - 16 (p.e.p.) > 19,5 - 1,2 -<- 40 70 s.s.b. (class-ab) 50 1,6 - 28 10 - 65 (p.e.p.) typ. 18 typ. 45 (1) 1,45 50 typ. - 30 25 pin configuration handbook, halfpage e c b mbb012 fig.1 simplified outline and symbol. ha lfpage 1 23 4 msb057 pinning - sot123 pin description 1 collector 2 emitter 3 base 4 emitter product safety this device incorporates beryllium oxide, the dust of which is toxic. the device is entirely safe provided that the beo disc is not damaged.
august 1986 3 philips semiconductors product speci?cation hf/vhf power transistor blw50f ratings limiting values in accordance with the absolute maximum system (iec 134) collector-emitter voltage (v be = 0) peak value v cesm max. 110 v collector-emitter voltage (open base) v ceo max. 55 v emitter-base voltage (open collector) v ebo max. 4 v collector current (average) i c(av) max. 2,5 a collector current (peak value); f > 1 mhz i cm max. 7,5 a d.c. and r.f. (f > 1 mhz) power dissipation; t mb = 25 cp tot ;p rf max. 94 w storage temperature t stg - 65 to + 150 c operating junction temperature t j max. 200 c fig.2 d.c. soar. handbook, halfpage mgp466 10 1 10 - 1 1 10 10 2 v ce (v) i c (a) t mb = 25 c t h = 70 c i continuous d.c. and r.f. operation ii short-time operation during mismatch fig.3 power derating curves vs. temperature. handbook, halfpage 0 150 100 50 0 100 mgp467 50 t h ( c) p rf (w) ii i thermal resistance (dissipation = 54 w; t mb =86 c, i.e. t h =70 c) from junction to mounting base (d.c. and r.f. dissipation) r th j-mb = 2,1 k/w from mounting base to heatsink r th mb-h = 0,3 k/w
august 1986 4 philips semiconductors product speci?cation hf/vhf power transistor blw50f characteristics t j =25 c note 1. measured under pulse conditions: t p 200 m s; d 0,02. collector-emitter breakdown voltage v be = 0; i c = 25 ma v (br) ces > 110 v collector-emitter breakdown voltage open base; i c = 100 ma v (br) ceo > 55 v emitter-base breakdown voltage open collector; i e = 10 ma v (br)ebo > 4v collector cut-off current v be = 0; v ce = 55 v i ces < 10 ma second breakdown energy; l = 25 mh; f = 50 hz open base e sbo > 8mj r be =10 w e sbr > 8mj d.c. current gain (1) i c = 1,2 a; v ce =5 v h fe typ. 25 15 to 100 d.c. current gain ratio of matched devices (1) i c = 1,2 a; v ce =5 v h fe1 /h fe2 < 1,2 collector-emitter saturation voltage (1) i c = 3,0 a; i b = 0,6 a v cesat typ. 1,2 v transition frequency at f = 100 mhz (1) - i e = 1,2 a; v cb = 45 v f t typ. 490 mhz - i e = 4,0 a; v cb = 45 v f t typ. 540 mhz collector capacitance at f = 1 mhz i e =i e = 0; v cb = 45 v c c typ. 53 pf feedback capacitance at f = 1 mhz i c = 50 ma; v ce = 45 v c re typ. 35 pf collector-?ange capacitance c cf typ. 2 pf
august 1986 5 philips semiconductors product speci?cation hf/vhf power transistor blw50f fig.4 v ce = 40 v; t mb =25 c. handbook, halfpage 1.5 0 0.5 typ 1 10 1 10 - 1 10 - 2 mgp468 i c (a) v be (v) fig.5 typical values; t j =25 c. handbook, halfpage 0123 40 30 10 0 20 mgp469 h fe i c (a) v ce = 45 v 5 v fig.6 typical values; f = 100 mhz; t j =25 c. handbook, halfpage 0510 600 0 200 400 mgp470 f t (mhz) - i e (a) v cb = 45 v 10 v fig.7 i e =i e = 0; f = 1 mhz; t j = 25 c. handbook, halfpage 02550 300 0 100 200 mgp471 c c (pf) v cb (v) typ
august 1986 6 philips semiconductors product speci?cation hf/vhf power transistor blw50f application information r.f. performance in s.s.b. class-a operation (linear power amplifier) v ce = 45 v; f 1 = 28,000 mhz; f 2 = 28,001 mhz list of components in fig.8: note 1. stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. relative to the according peak envelope powers these figures should be increased by 6 db. output power w g p db i c a d 3 (1) db d 5 (1) db t h c > 16 (p.e.p.) > 19,5 1,2 - 40 <- 40 70 typ. 17 (p.e.p.) typ. 20,5 1,2 - 40 <- 40 70 c1 = c2 = 10 to 780 pf ?lm dielectric trimmer c3 = 22 nf ceramic capacitor (63 v) c4 = 4,7 m f/16 v electrolytic capacitor c5 = 1 m f/75 v solid tantalum capacitor c6 = c7 = 47 nf polyester capacitor (100 v) c8 = 68 pf ceramic capacitor (500 v) c9 = 3,9 nf ceramic capacitor l1 = 3 turns closely wound enamelled cu wire (1,0 mm); int. dia 9,0 mm; leads 2 5 mm l2 = ferroxcube wide-band h.f. choke, grade 3b (cat. no. 4312 020 36640) l3 = 1,05 m h; 15 turns enamelled cu wire (1,0 mm); int. dia. 10 mm; length 17,4 mm; leads 2 5 mm l4 = 162 nh; 6 turns enamelled cu wire (1,0 mm); int. dia. 7,0 mm; length 11,6 mm; leads 2 5 mm r1 = 1,6 w ; parallel connection of 3 4,7 w carbon resistors ( 5%; 0,125 w) r2 = 47 w carbon resistor ( 5%; 0,25 w) r3 = 4,7 w carbon resistor ( 5%; 0,25 w) fig.8 test circuit; s.s.b. class-a. handbook, full pagewidth mgp472 50 w 50 w c2 c4 c3 l2 l3 c8 r2 c1 + v cc + v bb l1 r1 t.u.t. r3 c7 c5 c6 c9 l4
august 1986 7 philips semiconductors product speci?cation hf/vhf power transistor blw50f fig.9 intermodulation distortion (see note on previous page) as a function of output power. typical values; v ce = 45 v; f 1 = 28,000 mhz; f 2 = 28,001 mhz; t h = 70 c. handbook, full pagewidth 30 - 20 - 60 010 mgp473 20 - 50 - 40 - 30 d 3 (db) p.e.p. (w) i c = 0.8 a 1.0 a 1.2 a
august 1986 8 philips semiconductors product speci?cation hf/vhf power transistor blw50f r.f. performance in s.s.b. class-ab operation (linear power amplifier) v ce = 50 v; f 1 = 28,000 mhz; f 2 = 28,001 mhz list of components: note 1. stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. relative to the according peak envelope powers these figures should be increased by 6 db. output power g p h dt (%) i c (a) d 3 (1) d 5 (1) i c(zs) t h w db at 65 w p.e.p. db db ma c 10 to 65 (p.e.p.) typ. 18 typ. 45 typ. 1,45 typ. - 30 <- 30 50 25 c1 = c2 = 10 to 780 pf ?lm dielectric trimmer c3 = c5 = c6 = 220 nf polyester capacitor c4 = 120 pf ceramic capacitor (500 v) c7 = 150 pf ceramic capacitor (500 v) c8 = 47 m f/63 v electrolytic capacitor c9 = 3,9 nf ceramic capacitor l1 = 4 turns closely wound enamelled cu wire (1,6 mm); int. dia 7,0 mm; leads 2 5 mm l2 = ferroxcube wide-band h.f. choke, grade 3b (cat.no. 4312 020 36640) l3 = 9 turns enamelled cu wire (1,0 mm); int. dia. 10 mm; length 14,5 mm; leads 2 5 mm l4 = 6 turns enamelled cu wire (1,0 mm); int. dia. 6,5 mm; length 11,0 mm; leads 2 5 mm r1 = 2,4 w ; parallel connection of 2 4,7 w carbon resistors r2 = 39 w carbon resistor fig.10 test circuit; s.s.b. class-ab. handbook, full pagewidth mgp474 50 w 50 w c2 l2 l3 c7 r2 c1 + v cc l1 r1 t.u.t. c9 l4 c4 c5 c6 c8 c3 temperature compensated bias (r i < 0.1 w )
august 1986 9 philips semiconductors product speci?cation hf/vhf power transistor blw50f fig.11 intermodulation distortion as a function of output power (1) . handbook, halfpage 0255075 - 20 - 40 - 30 mgp475 d 3 , d 5 (db) d 3 p.e.p. (w) d 5 v ce = 50 v; i c(zs) = 50 ma; f 1 = 28,000 mhz; f 2 = 28,001 mhz; t h =25 c; typical values. fig.12 double-tone efficiency and power gain as a function of output power. handbook, halfpage 0255075 50 0 25 mgp476 20 0 10 g p (db) p.e.p. (w) h dt h dt (%) g p v ce = 50 v; i c(zs) = 50 ma; f 1 = 28,000 mhz; f 2 = 28,001 mhz; t h =25 c; typical values. ruggedness in s.s.b. operation the blw50f is capable of withstanding full load mismatch (vswr = 50 through all phases) up to 45 w (p.e.p.) under the following conditions: v ce = 50 v; f 1 = 28,000 mhz; f 2 = 28,001 mhz; t h = 70 c; r th mb-h = 0,3 k/w.
august 1986 10 philips semiconductors product speci?cation hf/vhf power transistor blw50f fig.13 power gain as a function of frequency. handbook, halfpage 30 10 0 20 mgp477 11010 2 g p (db) f (mhz) v ce = 50 v; i c(zs) = 50 ma; p l = 60 w; t h =25 c; z l = 16 w . fig.14 input impedance (series components) as a function of frequency. handbook, halfpage 20 0 - 10 10 mgp478 11010 2 r i , x i ( w ) f (mhz) x i r i v ce = 50 v; i c(zs) = 50 ma; p l = 60 w; t h =25 c; z l = 16 w . figs 13 and 14 are typical curves and hold for an unneutralized amplifier in s.s.b. class-ab operation.
august 1986 11 philips semiconductors product speci?cation hf/vhf power transistor blw50f package outline references outline version european projection issue date iec jedec eiaj sot123a 97-06-28 0 5 10 mm scale flanged ceramic package; 2 mounting holes; 4 leads sot123a 1 2 43 u 3 u 2 h h l b q d u 1 q a f c p m w 2 b c c a w 1 m ab a unit a mm d b 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 20.71 19.93 3.33 3.04 6.61 6.09 7.47 6.37 c d 1 u 2 u 3 9.78 9.39 1.02 0.51 w 2 w 1 45 a l 5.61 5.16 u 1 25.15 24.38 q 4.63 4.11 q 18.42 f 2.72 2.31 inches 0.229 0.219 0.007 0.004 0.383 0.373 0.397 0.371 0.815 0.785 0.131 0.120 0.26 0.24 0.294 0.251 0.385 0.370 0.04 0.02 0.221 0.203 0.99 0.96 0.182 0.162 0.725 0.107 0.091 p h dimensions (millimetre dimensions are derived from the original inch dimensions)
august 1986 12 philips semiconductors product speci?cation hf/vhf power transistor blw50f definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.

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