for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 1 hmc817lp4e smt gaas phemt dual channel low noise amplifier, 550 - 1200 mhz v00.1108 general description features functional diagram typical applications the h m c817 lp 4 e is a gaas ph em t dual chan - nel l ow noise amplifer that is ideal for cellular/3g and l t e / w i m ax/4g basestation front-end receivers operating between 550 and 1200 m hz. the amplifer has been optimized to provide 0.5 db noise fgure, 24 db gain and +37 dbm output ip 3 from a single supply of +5v. i nput and output return losses are excellent with minimal external matching and bias decoupling components. the h m c817 lp 4 e shares the same package and pinout with the h m c816 lp 4 e and h m c818 lp 4 e l nas. the h m c817 lp 4 e can be biased with +3v to +5v and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the l na for each application. noise f igure: 0.5 db gain: 16 db o utput ip 3: +37 dbm s ingle s upply: +3v to +5v 50 o hm m atched i nput/ o utput 24 l ead 4x4mm q fn p ackage: 16 mm 2 the h m c817 lp 4 e is ideal for: ? cellular/3g and l t e / w i m ax/4g ? bt s & i nfrastructure ? r epeaters and f emtocells ? m ulti-channel applications ? access p oints p arameter vdd = +3 v vdd = +5 v units m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. f requency r ange 698 - 960 550 - 1200 698 - 960 550 - 1200 m hz gain 13 16 11 15 13.5 16 11.5 16 db gain variation o ver temperature 0.003 0.003 0.005 0.005 db/ c noise f igure 0.5 0.8 0.5 1.1 0.55 0.85 0.6 1.1 db i nput r eturn l oss 28 22 22 17 db o utput r eturn l oss 12 14 12 15 db o utput p ower for 1 db compression ( p 1db) 14 16 12.5 16.5 18.5 20.5 16.5 21 dbm s aturated o utput p ower ( p sat) 17 17.5 21 21.5 dbm o utput third o rder i ntercept ( ip 3) 31 30 37 37 dbm s upply current ( i dd) 24 34 44 24 34 44 65 95 124 65 95 124 ma * r bias resistor sets current, see application circuit herein electrical specifcations, t a = +25 c, rbias 1, 2 = 10k ohms* vdd = vdd1 = vdd2 = +5v, idd = idd1 = idd2
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 2 input return loss vs. temperature [1] output return loss vs. temperature [1] broadband gain & return loss hmc817lp4e v00.1108 smt gaas phemt dual channel low noise amplifier, 550 - 1200 mhz [1] vdd = 5v [2] vdd = 3v gain vs. temperature [2] gain vs. temperature [1] reverse isolation vs. temperature [1] -35 -25 -15 -5 5 15 25 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 vdd= 5v vdd= 3v response (db) frequency (ghz) s21 s22 s11 10 12 14 16 18 20 22 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c - 40c gain (db) frequency (ghz) 10 12 14 16 18 20 22 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c - 40c gain (db) frequency (ghz) -35 -30 -25 -20 -15 -10 -5 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25 c +85 c - 40 c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25 c +85 c - 40 c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25 c +85 c - 40 c isolation (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 3 p1db vs. temperature psat vs. temperature hmc817lp4e v00.1108 smt gaas phemt dual channel low noise amplifier, 550 - 1200 mhz output ip3 and supply current vs. supply voltage @ 700 mhz [1] m easurement reference plane shown on evaluation p cb drawing. output ip3 vs. temperature noise figure vs. temperature [1] output ip3 and supply current vs. supply voltage @ 900 mhz 0 0.2 0.4 0.6 0.8 1 1.2 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 vdd= 5v vdd= 3v noise figure (db) frequency (ghz) +85c +25 c -40c 10 12 14 16 18 20 22 24 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25 c +85 c - 40 c p1db (dbm) frequency (ghz) vdd=3v vdd=5v 10 12 14 16 18 20 22 24 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25 c +85 c -40 c psat (dbm) frequency (ghz) vdd=5v vdd=3v 20 24 28 32 36 40 44 48 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25 c +85 c - 40 c ip3 (dbm) frequency (ghz) vdd=5v vdd=3v 26 28 30 32 34 36 38 40 0 30 60 90 120 150 180 210 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 (dbm) idd (ma) voltage supply (v) 26 28 30 32 34 36 38 40 0 30 60 90 120 150 180 210 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 (dbm) idd (ma) voltage supply (v)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 4 power compression @ 700 mhz [2] hmc817lp4e v00.1108 smt gaas phemt dual channel low noise amplifier, 550 - 1200 mhz power compression @ 900 mhz [2] power compression @ 700 mhz [1] power compression @ 900 mhz [1] [1] vdd = 5v [2] vdd = 3v gain, power & noise figure vs. supply voltage @ 700 mhz gain, power & noise figure vs. supply voltage @ 900 mhz 14 16 18 20 22 24 0 0.2 0.4 0.6 0.8 1 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 gain p1db noise figure gain (db) & p1db (dbm) noise figure (db) supply voltage (v) 14 16 18 20 22 24 0 0.2 0.4 0.6 0.8 1 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 gain p1db noise figure gain (db) & p1db (dbm) noise figure (db) supply voltage (v) -10 0 10 20 30 40 50 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -10 0 10 20 30 40 50 60 -16 -14 -12 -10 -8 -6 -4 -2 0 2 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -10 0 10 20 30 40 50 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -10 0 10 20 30 40 50 60 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 5 absolute maximum ratings ele ct ros tat ic se n si t i v e de v ic e o b ser v e hand li ng pre caut io n s typical supply current vs. vdd (rbias = 10k) hmc817lp4e v00.1108 smt gaas phemt dual channel low noise amplifier, 550 - 1200 mhz drain bias voltage (vdd) +6v rf input p ower ( rfin) (vdd = +5 vdc) +10 dbm channel temperature 150 c continuous pdiss (t= 85 c) (derate 16.67 m w /c above 85 c) 1.08 w thermal r esistance (channel to ground paddle) 60 c/w s torage temperature -65 to +150 c o perating temperature -40 to +85 c vdd (v) idd (ma) 2.7 24 3.0 34 3.3 44 4.5 82 5.0 95 5.5 105 note: amplifer will operate over full voltage ranges shown above. [1] vdd = 5v [2] vdd = 3v cross channel isolation [1] magnitude balance [1] phase balance [1] -40 -30 -20 -10 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 rfin1 to rfout2 rfin2 to rfout1 isolation (db) frequency (ghz) -1 -0.5 0 0.5 1 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 amplitude balance (db) frequency (ghz) -2 -1 0 1 2 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 phase balance (degrees) frequency (ghz) absolute bias register for idd range & recommended bias resistor vdd (v) rbias ? idd (ma) min max r ecommended 3v 10k open circuit 10k 34 5v 0 open circuit 820 58 2k 78 10k 95 with vdd = 3v rbias <10k is not recommended and may result in lna becoming conditionally unstable.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 6 outline drawing p art number p ackage body m aterial l ead f inish msl r ating p ackage m arking [1] h m c817 lp 4 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] h817 xxxx [1] 4-digit lot number xxxx [2] m ax peak refow temperature of 260 c n ot es : 1. le ad fr a me m at eri a l : c opper a llo y 2. d ime n sio n s a re i n i nch es [ millime t ers ] 3. le ad sp ac i ng t oler anc e is n o n-cu m u l at i v e 4. p ad bu rr le ngth s ha ll b e 0.15mm m ax im u m . p ad bu rr h ei ght s ha ll b e 0.05mm m ax im u m . 5. p ackag e w a rp s ha ll n ot e xc ee d 0.05mm. 6. a ll g ro und le ad s and g ro und p add le m u s t b e sol d ere d to p cb rf g ro und. 7. refer to h i tt i t e a ppli cat io n n ot e for s ugg es t e d l and p att er n. package information hmc817lp4e v00.1108 smt gaas phemt dual channel low noise amplifier, 550 - 1200 mhz pin descriptions pin number f unction description i nterface schematic 1, 6 rfin1, rfin2 these pins are matched to 50 o hms. 2, 5, 7, 12, 14, 17, 19, 24 gnd these pins and package bottom must be connected to rf /dc ground. 3, 4, 8 - 10, 21 - 23 n/c no connection required. these pins may be connected to rf /dc ground without affecting performance.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 7 application circuit pin descriptions (continued) hmc817lp4e v00.1108 smt gaas phemt dual channel low noise amplifier, 550 - 1200 mhz pin number f unction description i nterface schematic 11, 20 vdd1, vdd2 p ower supply voltages for each amplifer. choke inductor and bypass capacitors are required. s ee application circuit. 13, 18 rfout1, rfout2 these pins are matched to 50 o hms. 15, 16 res1, res2 these pins are used to set the dc current of each amplifer via external biasing resistor. s ee application circuit.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 8 evaluation pcb i tem description j1 - j4 p cb m ount sm a rf connector j5, j6 2mm vertical m olex 8 pos connector c5, c6 1000 p f capacitor, 0603 p kg. c9, c10 0.47 f capacitor, 0603 p kg.. c11, c12 10 kp f capacitor, 0402 p kg. r 1 - r 4 0 o hm r esistor, 0402 p kg. r 5, r 6 ( r bias 1, 2) 10k r esistor, 0402 p kg. l 1, l 2 15 nh i nductor, 0402 p kg. l 5, l 6 18 nh i nductor, 0603 p kg. u1 h m c817 lp 4 e amplifer p cb [2] 122725 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 or arlon 25 fr list of materials for evaluation pcb 123193 [1] the circuit board used in this application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro - priate heat sink. the evaluation circuit board shown is available from hittite upon request. hmc817lp4e v00.1108 smt gaas phemt dual channel low noise amplifier, 550 - 1200 mhz
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