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silicon planar zener diodes features ? total power dissipation: max. 500 mw ? small plastic package suitable for surface mounted design ? high reliability absolute maximum ratings (t a = 25 o c) parameter symbol value unit power dissipation p tot 500 mw junction temperature t j 150 o c storage temperature range t stg - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol max. unit thermal resistance junction to ambient air r tha 340 o c/w forward voltage at i f = 10 ma v f 0.9 v anode 2 top view simplified outline sod-123 and symbol 1 2 pinning 1 pin cathode description mm1z2v2b~mm1z39b 1 date:2011/05 www.htsemi.com semiconductor jinyu
characteristics at t a = 25 o c type marking code zener voltage range 1) dynamic impedance 2) reverse leakage current v znom v l zt for v zt z zt (max.) at i zt i r (max.) at v r ma v ? ma a v mm1z2v2b 9b 2.2 5 2.1...2.4 100 5 120 0.7 mm1z2v4b 9c 2.4 5 2.3?2.65 100 5 120 1 mm1z2v7b 9d 2.7 5 2.65?2.95 110 5 120 1 MM1Z3V0B 9e 3.0 5 2.95?3.25 120 5 50 1 mm1z3v3b 9f 3.3 5 3.25?3.55 120 5 20 1 mm1z3v6b 9h 3.6 5 3.6?3.845 100 5 10 1 mm1z3v9b 9j 3.9 5 3.89?4.16 100 5 5 1 mm1z4v3b 9k 4.3 5 4.17?4.43 100 5 5 1 mm1z4v7b 9m 4.7 5 4.55?4.75 100 5 2 1 mm1z5v1b 9n 5.1 5 4.98?5.2 80 5 2 1.5 mm1z5v6b 9p 5.6 5 5.49?5.73 60 5 1 2.5 mm1z6v2b 9r 6.2 5 6.06?6.33 60 5 1 3 mm1z6v8b 9x 6.8 5 6. 65?6.93 40 5 0.5 3.5 mm1z7v5b 9y 7.5 5 7.28?7.6 30 5 0.5 4 mm1z8v2b 9z 8.2 5 8.02?8.36 30 5 0.5 5 mm1z9v1b 0a 9.1 5 8.85?9.23 30 5 0.5 6 mm1z10b 0b 10 5 9.77?10.21 30 5 0.1 7 mm1z11b 0c 11 5 10.76?11.22 30 5 0.1 8 mm1z12b 0d 12 5 11.74?12.24 30 5 0.1 9 mm1z13b 0e 13 5 12.91?13.49 37 5 0.1 10 mm1z15b 0f 15 5 14.34?14.98 42 5 0.1 11 mm1z16b 0h 16 5 15.85?16.51 50 5 0.1 12 mm1z18b 0j 18 5 17.56?18.35 65 5 0.1 13 mm1z20b 0k 20 5 19.52?20.39 85 5 0.1 15 mm1z22b 0m 22 5 21.54?22.47 100 5 0.1 17 mm1z24b 0n 24 5 23.72?24.78 120 5 0.1 19 mm1z27b 0p 27 5 26.19?27.53 150 5 0.1 21 mm1z30b 0r 30 5 29.19?30.69 200 5 0.1 23 mm1z33b 0x 33 5 32.15?33.79 250 5 0.1 25 mm1z36b 0y 36 5 35.07?36.87 300 5 0.1 27 mm1z39b 0z 39 5 37?41 100 5 2 30 1) v z is tested with pulses(20 ms). 2) z zt is measured at i z by given a very small a.c. current signal. mm1z2v2b~mm1z39b 2 date:2011/05 www.htsemi.com semiconductor jinyu
package outline plastic surface mounted package; 2 leads sod-123 e mm unit a b c dehv all round d b c a a h h e p p e 1.15 1.05 0.6 0.5 0.135 0.100 2.7 2.6 1.65 1.55 3.9 3.7 0.2 o 5 mm1z2v2b~mm1z39b 3 date:2011/05 www.htsemi.com semiconductor jinyu

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