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c c o o n n f f i i d d e e n n t t i i a a l l microsemi 11861 western avenue, garden grove, ca. 92841. tel: (714) 898-8121 page 1 copyright ? 2000 rev. 0.2,2000-12-15 www. microsemi . com MWS11-GB11-XX ingap hbt gain block p review a microsemi company

this general purpose amplifier is a low cost, broadband rfic manufactured with an ingap/gaas heterojunction bipolar transistor (hbt) process (mocvd). this rfic amplifier was designed as an easily cascadable 50 ohm gain block. the device is self-contained with 50 ohm input and output impedance. applications in- clude if and rf amplification in wireless/ wired voice and data communication products and broadband test equipment operating up to 6 ghz. this rfic amplifier is initially available in a plastic sot-89 3-pin package to handle p1db output power up to 19dbm (5v). the same rfic will be available later in an advanced microsemi gigamite? package, with significantly smaller footprint for applications where board space is at a premium. important: for the most current data, consult microsemi s website: http://www.microsemi.com advanced ingap hbt dc to 6ghz single +5v supply small signal gain = 16db p1db = 19dbm (5v), f=1ghz sot-89 3-pin, & gigamite packages

broadband gain blocks if or rf buffer amplifiers driver stage for power amps final power amp for low to medium power applications broadband test equipment -1 0 -5 0 5 10 15 20 25 30 35 40 45 -2 0 -1 5 -1 0 -5 0 5 1 0 1 5 pin (dbm ) gain (db), pout (dbm), current (a) 00 pout gain current f = 5 .7 g h z vcc = 5 v nominal current 20 m a
pk plastic sot-89 3 pin gigamite mws11gb11-s1 mws11gb11-g1 note: available in tape & reel. append the letter t to the part number. (i.e. msw11gb11-s89t) m m w w s s 1 1 1 1 - - g g b b 1 1 1 1
c c o o n n f f i i d d e e n n t t i i a a l l microsemi 11861 western avenue, garden grove, ca. 92841. tel: (714) 898-8121 page 2 copyright ? 2000 rev. 0.2,2000-12-15 www. microsemi . com MWS11-GB11-XX ingap hbt gain block p review a microsemi company

dc supply voltage..................................................................................................5.0 vdc absolute max. limit...................................................................................................60ma rf input power (pin)...............................................................................................10 dbm operating case temperature ..........................................................................-40o to +85oc storage temperature.....................................................................................-60o to +150oc note: exceeding these ratings could cause damage to the device. all voltages are with respect to ground. currents are positive into, negative out of specified terminal. pk plastic sot-89 3-pin thermal resistance - junction to ambient , q ja xx c/w t hermal r esistance -j unction to c ase , q jc 149c/w t hermal r esistance -j unction to l ead , q jt xx c/w gigamite thermal resistance - junction to ambient , q ja xx c/w t hermal r esistance -j unction to c ase , q jc xx c/w t hermal r esistance -j unction to l ead , q jt xx c/w junction temperature calculation: t j = t a + (p d x q ja ). the q ja numbers are guidelines for the thermal performance of the device/pc-board system. all of the above assume no ambient airflow.

12 3 rf in gnd rf out/ bias tab is gnd pk p ackage (top view)

rf in rf input pin. a dc blocking capacitor should be used in most applications. gnd ground connection. traces should be minimized and connect immediately to ground. rf out / bias rf output and bias pin. in the bias network, a resistor is selected to set the dc current into this pin as: () cc d cc i v v r - = note that maximum current limit i cc must not be exceeded and a resistor should always be used. a dc blocking capacitor should also be used. p p a a c c k k a a g g e e d d a a t t a a
c c o o n n f f i i d d e e n n t t i i a a l l microsemi 11861 western avenue, garden grove, ca. 92841. tel: (714) 898-8121 page 3 copyright ? 2000 rev. 0.2,2000-12-15 www. microsemi . com MWS11-GB11-XX ingap hbt gain block p review a microsemi company unless otherwise specified, the following specifications apply over the operating ambient temperature -40 c t a +85 c except where otherwise noted. test conditions: [enter test conditions here] MWS11-GB11-XX parameter symbol test conditions min typ max units power supply application frequency range f dc 6 ghz linear output power p1db f=2ghz 16 19 dbm output 3 rd order intermod product* ip3 34 dbm small-signal gain g f=1 ghz 13 16 db noise figure nf f=1.5 ghz 3.3 3.5 4 db supply voltage v cc 4.6 5 v supply current 20 60 ma overall frequency range t=25c, v d =5.5v, i cc =70ma dc to >6000 mhz 1db bandwidth 5.5 ghz freq = 100mhz 11.3 db freq = 1000mhz 11.3 db freq = 2000mhz 10.2 11.4 db freq = 3000mhz 11.5 db freq = 4000mhz 11.5 db gain freq = 6000mhz 9.9 db gain flatness 100mhz to 2000mhz 0.05 db noise figure freq = 1000mhz 7.6 db

<1.8:1 input vswr

<2.5:1

<1.8:1 output vswr

<2.5:1 output i p3 freq = 1000mhz 34.5 dbm output p 1db freq = 1000mhz 18.5 dbm reverse isolation freq = 1000mhz 16.5 db thermal maximum measured junction temp at dc bias conditions t a = +85c 142 c t a = +85c 1.4x10 3 years ? t a = +25c 3.4x10 5 years ? mean time between failures t a = -40c 1.8x10 9 years ? * output power at 1db gain compression point, f=1 ghz ? in accordance with manufacturer design e e l l e e c c t t r r i i c c a a l l s s
c c o o n n f f i i d d e e n n t t i i a a l l microsemi 11861 western avenue, garden grove, ca. 92841. tel: (714) 898-8121 page 4 copyright ? 2000 rev. 0.2,2000-12-15 www. microsemi . com MWS11-GB11-XX ingap hbt gain block p review a microsemi company

vcc 50 wm stri p 50 wm stri p 220 nh 20 w p f 1.0 m f vd 150 p f p f vcc rf out rf in 50 wm stri p 50 wm stri p nh 20 w 0.01 m f p f 150 123 vcc 50 wm stri p 50 wm stri p 20 w f 1.0 m f vd 150 p f p f vcc rf out rf in 50 wm stri p 50 wm stri p 20 w 0.01 m f p f 150 123 100 p f a a p p p p l l i i c c a a t t i i o o n n /4 tl,
c c o o n n f f i i d d e e n n t t i i a a l l microsemi 11861 western avenue, garden grove, ca. 92841. tel: (714) 898-8121 page 5 copyright ? 2000 rev. 0.2,2000-12-15 www. microsemi . com MWS11-GB11-XX ingap hbt gain block p review a microsemi company

pk 3-pin plastic to-89 g a k h f b j c e d i note: 1. dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006) on any side. lead dimension shall not include solder coverage. m illimeters i nches dim min max min max a 4.30 4.70 0.169 0.185 b 2.30 2.70 0.090 0.106 c 1.30 1.70 0.051 0.066 d 0.35 0.45 0.013 0.017 e 0.35 0.50 0.013 0.019 f 0.30 0.50 0.011 0.019 g 1.50 bsc 0.059 bsc h 0.40 0.60 0.015 0.023 i 0.50 0.50 0.019 0.019 j 3.90 4.30 0.153 0.169 k 1.55 1.75 0.061 0.068 m m e e c c h h a a n n i i c c a a l l s s
c c o o n n f f i i d d e e n n t t i i a a l l microsemi 11861 western avenue, garden grove, ca. 92841. tel: (714) 898-8121 page 6 copyright ? 2000 rev. 0.2,2000-12-15 www. microsemi . com MWS11-GB11-XX ingap hbt gain block p review a microsemi company

n n o o t t e e s s product preview data C information contained in this document is pre-production data, and is proprietary to microsemi. it may not be modified in any way without the express written consent of microsemi. product referred to herein is not guaranteed to achieve preliminary or production status and product specifications, configurations, and availability may change at any time.

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