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february 2010 doc id 14402 rev 3 1/12 12 STW43NM60ND n-channel 600 v, 0.075 ? , 35 a to-247 fdmesh? power mosfet (with fast diode) features the worldwide best r ds(on) *area amongst the fast recovery diode devices 100% avalanche tested low input capacitance and gate charge low gate input resistance extremely high dv/dt and avalanche capabilities. application switching applications description the fdmesh? ii series belongs to the second generation of mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- recovery body diode.it is therefore strongly recommended for bridge topologies, in particular zvs phase-shift converters. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max i d STW43NM60ND 650 v < 0.088 ? 35 a 1 2 3 to-247 !-v $ ' 3 table 1. device summary order code marking package packaging STW43NM60ND 43nm60nd to-247 tube www.st.com
contents STW43NM60ND 2/12 doc id 14402 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STW43NM60ND electrical ratings doc id 14402 rev 3 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 35 a i d drain current (continuous) at t c = 100 c 22 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 140 a p tot total dissipation at t c = 25 c 255 w dv/dt (2) 2. i sd 35 a, di/dt 600 a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 40 v/ns t stg storage temperature ?55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit rthj-case thermal resistance junction-case max 0.49 c/w rthj-amb thermal resistance junction-ambient max 50 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 14 a e as single pulse avalanche energy (starting t j =25 c, i d =i as , v dd =50 v) 1000 mj
electrical characteristics STW43NM60ND 4/12 doc id 14402 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, @125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 17.5 a 0.075 0.088 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds =15 v , i d = 17.5 a - 17 - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 4300 250 25 - pf pf pf c oss eq. (2) 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 530 - pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 35 a, v gs = 10 v, (see figure 15) - 145 18 80 - nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level = 20 mv open drain -1.7 - ?
STW43NM60ND electrical characteristics doc id 14402 rev 3 5/12 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 300 v, i d = 17.5 a r g =4.7 ? v gs = 10 v (see figure 14) - 30 40 120 50 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 35 140 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 35 a, v gs = 0 - 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 35 a, di/dt = 100 a/s v dd = 100 v (see figure 16) - 190 1.6 17 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 35 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 16) - 280 3.0 22 ns c a
electrical characteristics STW43NM60ND 6/12 doc id 14402 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. transconductance figure 7. static drain-source on resistance i d ( a ) 10 2 10 1 10 0 10 -1 10 -1 10 0 10 1 10 2 v d s (v) 10 s 100 s 1m s 10m s oper a tion in thi s a re a i s limited b y m a x r d s (on) am0150 8 v1 6 $3 6 ) $ ! 6 6 6 '3 6 !-v 6 '3 6 ) $ ! !-v 0 10 20 i d (a) 0.5 5.5 10.5 20.5 g f s ( s ) 25 515 15.5 3 0 3 5 t j =150c t j =25c t j =-50c am01511v1 0 10 20 i d (a) 0.060 0.065 0.070 0.0 8 0 r d s (on) ( ? ) 0.075 3 0 0.0 8 5 am01512v1
STW43NM60ND electrical characteristics doc id 14402 rev 3 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized b vdss vs temperature 1 g n# 6 '3 6 6 $$ 6 ) $ ! !-v 6 $3 6 # p& #iss #oss #rss !-v -50 0 t j (c) 0. 8 1.0 v g s (th) (norm) -25 25 50 75 100 125 0.7 0.9 1.1 am01515v1 -50 0 t j (c) 0.5 0.9 1. 3 2.1 r d s (on) (norm) -25 25 1.7 50 75 100 125 0.7 1.1 1.5 1.9 am01516v1 0 10 i s d (a) 0.4 0.6 0. 8 v s d (v) 515 1.0 20 25 3 0 3 5 0.5 0.7 0.9 t j =150c -50c 25c am01517v1 -50 0 t j (c) 0.9 3 0.97 1.01 bv (d ss ) (v) -25 25 1.05 50 75 100 125 am0151 8 v1
test circuits STW43NM60ND 8/12 doc id 14402 rev 3 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive wavefo rm figure 19. switching time waveform
STW43NM60ND package mechanical data doc id 14402 rev 3 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack? packages, depending on their level of environmental compliance. ecopack? specifications, grade definitions and product status are available at: www.st.com. ecopack? is an st trademark.
package mechanical data STW43NM60ND 10/12 doc id 14402 rev 3 dim. mm. min. typ. max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
STW43NM60ND revision history doc id 14402 rev 3 11/12 5 revision history table 9. document revision history date revision changes 06-feb-2008 1 first release 22-jan-2009 2 document status promoted from preliminary data to datasheet. 16-feb-2010 3 figure 13: normalized b vdss vs temperature has been corrected
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