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  1 file number 4097.2 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | copyright intersil corporation 1999 hs-508arh radiation hardened 8 channel cmos analog multiplexer with overvoltage protection the hs-508arh is a dielectrically isolated, radiation hardened, cmos analog multiplexer incorporating an important feature; it withstands analog input voltages much greater than the supplies. this is essential in any system where the analog inputs originate outside the equipment. they can withstand a continuous input up to 10v greater than either supply, which eliminates the possibility of damage when supplies are off, but input signals are present. equally important, it can withstand brief input transient spikes of several hundred volts; which otherwise would require complex external protection networks. necessarily, on resistance is somewhat higher than similar unprotected devices, but very low leakage current combine to produce low errors. reference application notes 520 and 521, available from the semiconductor products division of intersil, for further information on the hs-508arh multiplexer in general. the hs-508arh has been speci?ally designed to meet exposure to radiation environments. operation from -55 o cto 125 o c is guaranteed. features electrically screened to smd # 5962-96742 qml quali?d per mil-prf-38535 requirements radiation environment - gamma dose ( ) . . . . . . . . . . . . . . . . . 1 x 10 5 rad(si) - dielectrically isolated device islands - sep >110 mev-mg/cm 2 analog/digital overvoltage protection fail safe with power loss (no latchup) break-before-make switching dtl/ttl and cmos compatible analog signal range . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15v fast access time supply current at 1mhz address toggle . . . . . .4ma (typ) standby power . . . . . . . . . . . . . . . . . . . . . . . .7.5mw (typ) speci?ations for rad hard qml devices are controlled by the defense supply center in columbus (dscc). the smd numbers listed here must be used when ordering. detailed electrical speci?ations for these devices are contained in smd 5962-96742. a ?ot-link?is provided on our homepage for downloading. www.intersil.com/spacedefense/newsafclasst.asp pinouts hs1-508arh 16 lead sidebraze dip mil-std-1835, cdip2-t16 top view HS9-508ARH 16 lead flatpack mil-std-1835, cdfp4-f16 top view product information product number internal mkt. number temp. range ( o c) 5962r9674201qec hs1-508arh-8 -55 to 125 5962r9674201qxc HS9-508ARH-8 -55 to 125 5962r9674201vec hs1-508arh-q -55 to 125 5962r9674201vxc HS9-508ARH-q -55 to 125 hs1-508arh/proto hs1-508arh/proto -55 to 125 HS9-508ARH/proto HS9-508ARH/proto -55 to 125 14 15 16 9 13 12 11 10 1 2 3 4 5 7 6 8 ao en -vsup in 1 in 2 in 3 out in 4 a1 gnd +vsup in 5 in 6 in 7 in 8 a2 2 3 4 5 6 7 8 116 15 14 13 12 11 10 9 en in1 in2 in3 in4 out gnd in5 in6 in7 in8 a0 a1 a2 +vsup -vsup data sheet december 1999 [ /title (hs- 508ar h) /sub- ject (radia- tion hard- ened 8 chan- nel cmos ana- log multi- plexer with over- volt- age protec- tion) /autho r () /key- words (har- ris corpo- ration, semi- con- ductor com- muni- cations divi- obsolete pr oduct possible substitute pr oduct hs-508brh, fn4824
2 functional diagram n p en in 1 out in 8 digital address decoders address input buffer and level shifter multiplex switches 1 8 a0 a1 a2 n p truth table a2 a1 a0 en on channel x x x l none lllh 1 llhh 2 lhlh 3 lhhh 4 hllh 5 hlhh 6 hhlh 7 hhhh 8 hs-508arh
3 schematic diagrams figure 1. address input buffer and level shifter figure 2. address decoder figure 3. multiplex switch v+ r10 r9 q1 q4 d3 ttl reference circuit v- v+ level shifter add in. 200 ? v+ d1 d2 r1 r5 r6 r7 r8 r2 r3 r4 overvoltage protection level shifted address to decode level shifted address to decode v- +v enable a0 or a0 a1 or a1 a2 or a2 to p-channel device of the switch pair to n-channel device of the switch pair v- d6 d7 d4 d5 v out in r11 1k from decode from decode overvoltage protection v+ q6 q5 hs-508arh
4 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site http://www.intersil.com die characteristics die dimensions: 83 mils x 108 mils x 19 mils interface materials: glassivation: type: sio 2 thickness: 8k ? 1k ? top metallization: type: alcu thickness: 12.5k ? 2k ? substrate: cmos dielectric isolation backside finish: silicon assembly related information: substrate potential: unbiased (di) additional information: worst case current density: 6.68e04 a/cm 2 transistor count: 506 metallization mask layout hs-508arh in3 in4 out in8 in7 in6 en a0 a1 a2 in2 in1 -v in5 +v gnd hs-508arh


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