? 2003 ixys all rights reserved 1 - 2 ixys reserves the right to change limits, test conditions and dimensions. v rsm v rrm types v v 900 800 vbo 55-08no7 1300 1200 vbo 55-12no7 1500 1400 vbo 55-14no7 1700 1600 vbo 55-16no7 1900 1800 vbo 55-18no7 symbol conditions maximum ratings i dav t c = 100c, module 55 a i fsm t vj = 45c; t = 10 ms (50 hz), sine 750 a v r = 0 t = 8.3 ms (60 hz), sine 820 a t vj = t vjm t = 10 ms (50 hz), sine 600 a v r = 0 t = 8.3 ms (60 hz), sine 700 a i 2 t t vj = 45c t = 10 ms (50 hz), sine 2800 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 2820 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 2200 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 2250 a 2 s t vj -40...+150 c t vjm 150 c t stg -40...+125 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque (m5) 5 15% nm (10-32 unf) 44 15% lb.in. weight typ. 110 g i dav = 55 a v rrm = 800-1600 v symbol conditions characteristic values i r v r = v rrm ;t vj = 25c 0.5 ma v r = v rrm ;t vj = t vjm 10 ma v f i f = 150 a; t vj = 25c 1.6 v v t0 for power-loss calculations only 0.8 v r t t vj = t vjm 6m ? r thjc per diode; dc current 1.3 k/w per module 0.325 k/w r thjk per diode, dc current 1.6 k/w per module 0.4 k/w d s creeping distance on surface 16.1 mm d a creepage distance in air 7.5 mm a max. allowable acceleration 50 m/s 2 features package with copper base plate isolation voltage 3000 v~ planar passivated chips low forward voltage drop ?" fast-on power terminals applications supplies for dc power equipment input rectifiers for pwm inverter battery dc power supplies field supply for dc motors advantages easy to mount with two screws space and weight savings improved temperature and power cycling capability small and light weight dimensions in mm (1 mm = 0.0394") data according to iec 60747 refer to a single diode unless otherwise stated. single phase rectifier bridge a + b - c~ e~ 316 vbo 55 recommended replacement: vbo65-##no720070731a 20070731a not for new design
? 2003 ixys all rights reserved 2 - 2 0.5 1 1.5 2 0 50 100 150 200 v f [v] i f [a] t vj = 150c t vj = 25c 0.4 0.6 0.8 1 1.2 1.4 1.6 10 0 10 1 10 2 10 3 t[ms] i(a) fsm tvj=45c tvj=150c 750 675 i ------ i fsm f(ov) 0v rrm 1/2 v rrm 1v rrm 2 4 6 1 0 tvj=45c tvj=150c t [ms] 1 10 10 10 2 3 4 as 2 50 30 10 0 25 50 75 100 125 150 175 200 85 90 95 10 0 10 5 11 0 11 5 12 0 12 5 13 0 13 5 14 0 14 5 15 0 tc c dc sin.180 rec.120 rec.60 rec.30 2.67 1.17 0.67 0.42 0.3 0.17 = rthca [k/w] ifavm [a] tamb [k] 0 50 100 150 [w] pvtot psb 51 50 100 150 200 0 10 20 30 40 50 60 dc sin.180 rec.120 rec.60 rec.30 t (c) c i dav [a] 0.01 0.1 1 10 1 2 k/w z th t[s] z thjk z thjc vbo 55 fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current per diode i fsm : crest value. t: duration fig.5 maximum forward current at case temperature fig. 4 power dissipation versus direct output current and ambient temperature fig. 3 i 2 dt versus time (1-10ms) per diode or thyristor fig. 6 transient thermal impedance per diode or thyristor, calculated 316 typ. 20070731a not for new design
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