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fk suffix (pb-free) 98asa00428d 23 pin pqfn (12 x12 mm) 06XS4200 ordering information device temperature range (t a ) package mc06XS4200fk - 40 to 125 c 23 pqfn high side switch document number: mc06XS4200 rev. 1.0, 8/2012 freescale semiconductor ? advance information ? freescale semiconductor, in c., 2012. all rights reserved. *this document contains certain info rmation on a product under development. ? freescale reserves the right to change or discontinue this product without notice dual 24 v, 6.0 mohm high side switch the 06XS4200 device is part of a 24 v dual high side switch product fa mily with integrated control and a high number of protective and diagnostic functions. it has been designed for truck, bus, and industrial applications. the low r ds(on) channels (<6.0 m? ) ca n control different load types; bulbs, solenoids, or dc motors. control, device configuration, and diagnostics are performed through a 16-bit serial peripheral interface (spi), allowing easy integration into existing applications. both channels can be controlled individually by external/internal clock-sign als or by direct inputs. using the internal clock allows fully autonomous device operation. progr ammable output voltage slew rates (individually programmable) help improve emc performance. to avoid shutting off the device during in rush current, while still being able to closely track the load current, a dynamic over-current threshold profile is featured. switching curr ent of each channel can be sensed with a programmable sensing ratio. whenever communication with the external microcontroller is lost, t he device enters a fail-safe operation mode, but remains operational, controllable, and protected. features ? two fully-protected 6.0 m ? (@ 25 c) high side switches ?up to 9.0 a steady-state current per channel ? separate bulb and dc motor latched over-current handling ? parallel output operating m ode with improved switching synchronization ? individually programmable internal/external pwm clock signals (switching frequency, duty cycle, sl ew rate, switch -on time-shift) ? over-current, short-circuit, and ov er-te mperature protection with programmable auto-retry functions ? accurate temperature and current sensing (high/low sensing ratios/off set compensation) ? open-load detection (channel in off and on state), also for led app lications (7.0 ma typ.) ? normal operating range: 8.0 - 36 v, extended range: 6.0 - 58 v, 3.3 v and 5.0 v compatible 16-bit spi po rt for device control, configuration, and diagnosti cs at rates up to 8.0 mhz mcu v dd clock fsb sclk csb so rstb si in0 in1 csns gnd vdd vpwr hs0 hs1 load i/o sclk csb si i/o so i/o i/o a/d gnd load m conf0 conf1 fsob i/o a/d sync i/o 06XS4200 v dd v pwr figure 1. simplified application diagram
analog integrated circuit device data ? 2 freescale semiconductor 06XS4200 internal block diagram internal block diagram gnd over-temperature detect. control severe short-circuit selectable over-current internal regulator selectable slew rate gate driver over/under-voltage protections hs0 vpwr vdd csb sclk so si rstb clock fsb in0 hs1 hs0 hs1 in1 detection output csns i dwn i up open-load detect detection temperature feedback v reg short-circuit to charge v dd failure detection calibratable oscillator * pwm module drain/gate clamp r dwn current sense analog mux over-temperature prewarning pump por fsob conf0 conf1 i up v reg i dwn sync i dwn vpwr detec. logic * *blocks marked in grey have been implemented independently for each of both channels figure 2. internal block diagram analog integrated circuit device data freescale semiconductor 3 06XS4200 table of contents table of contents internal block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 pin connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 static electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 dynamic electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 timing diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 pin assignment and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 functional internal block description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 functional device operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 operation and operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 logic commands and spi registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 typical applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 soldering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 marking information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 package mechanical dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 analog integrated circuit device data ? 4 freescale semiconductor 06XS4200 pin connections pin connections transparent top view 1 12 10 9 8 7 6 5 4 3 2 20 19 15 14 13 hs0 hs1 csns in1 fsob conf0 conf1 fsb rstb csb sclk si vdd gnd vpwr 11 23 22 21 16 17 18 clock in0 sync gnd vpwr so gnd vpwr 06XS4200 figure 3. device pin assignments table 1. 06XS4200 pin assignments the function of each pin is described in the section functional description pin number pin name function formal name definition 1 csns output output current/ temper ature monitoring this pin either outputs a current proportional to the channel?s output current or a voltage pr oportional to the temperature of the gnd pin (pin 14). selection between current and temperature sensing, as well as setting the current sensing sensitivity are performed through the spi interface. an external pull- down resistor must be connected between csns and gnd. 2 3 in0 in1 input direct inputs the in[0 : 1] input pins are used to directly control the switching state of both switches a nd consequently the voltage on the hs0 : hs1 output pins. the pins are connected to gnd b y internal pull-down resistors 4 fsob output fail-safe output ( active low) fsob is asserted (active-low) upon entering fail-safe mode (see functional description ) this open-drain output requires an external pull-up resistor to v pwr 5 6 conf0 conf1 input configuration input the conf[0 : 1] input pins are used to select the appropriate over-current detect ion profile (bulb/dc motor) for each of both channels. conf requires a pull-down resistor to gnd. 7 fsb output fault status ( active low) this open-drain output pin (external pull-up resistor to v dd required) is set when the device enters fault mode (see fault mode ) 8 clock input pwm clock the clock input gives the time-base wh en the device is operated in external clock/internal pwm mode. this pin has an internal pull-down current source. 9 rstb input reset this input pin is used to initialize the dev ice?s configuration - and fault registers. reset will put the device in sleep mode (l ow current consumption) provided it is not stimulated by direct input signals.this pin is connected to gnd by an internal pull-down resistor. 10 csb input chip select ( active low) this input pin is connected to the spi chip-select output of an external - controller. csb is internally pulled up to v dd by a current source i up . analog integrated circuit device data freescale semiconductor 5 06XS4200 pin connections 11 sclk input serial clock this input pin is to be connected to an external spi clock signal. the sclk pin is internally connected to a pull-down current source i dwn 12 si input serial input this input pin receives the spi i nput data from an external device (microcontroller or another extreme swit ch device in case of daisy-chaining). the si pin is internally connected to a pull-down current source i dwn 13 vdd power digital drain voltage this is the positive supply pin of the spi interface. 16 so output serial output this output pin transmits spi dat a to an external device (external microcontroller or the si pin of the nex t spi device in case of daisy-chaining). the pin doesn?t require external pull-up or pull-down resistors, but a series resistor is recommended to limit curr ent consumption in case of gnd disconnection 14, 17, 22 gnd ground ground these pins, internally connected, are th e ground pins for the logic - and analog circuitry. it is recommended to al so connect these pins on the pcb. 15,18,21 vpwr power positive power supply these pins, internally connected, s upply both the device?s power and control circuitry (except the spi port). the drain of both internal mosfet switches is connected to them. pin 15 is the device?s primary thermal pad. 19 20 hs1 hs0 output power switch outputs output pins of the switches, to be connected to the load. 23 sync output output current monitoring synchronization this output pin is asserted (active lo w) when the current sense (cs) output signal is within the specif ied accuracy range. readi ng the sync pin allows the external microprocessor to synchroni ze to the device when operating in autonomous operating mode. sync is open-drain and requires a pull-up resistor to v dd . table 1. 06XS4200 pin assignments (continued) the function of each pin is described in the section functional description pin number pin name function formal name definition analog integrated circuit device data 6 freescale semiconductor 06XS4200 electrical characteristics maximum ratings electrical characteristics maximum ratings table 2. maximum ratings all voltages are relative to ground unless mentioned othe rwise. exceeding these ratings may cause permanent damage. parameter symbol maximum ratings unit electrical ratings vpwr supply voltage range load dump at 25 c (500 ms) reverse battery at 25 c (2 min.) fast negative transient pulses (iso 7637-2 pulse #1, v pwr =14v & ri=10 : ) v pwr 58 -28 -60 v vdd supply voltage range v dd -0.3 to 5.5 v voltage on input pins (1) (except in[0:1]) and output pins (2) (except hs[0:1]) v max,logic (1) -0.3 to 5.5 v voltage on fail-safe output (fsob) v fso -0.3 to 58 v voltage on so pin v so -0.3 to v dd +0.3 v voltage (continuous, max. allowable) on in[0:1] inputs v in,max 58 v voltage (continuous, max. allowable) on output pins (hs [0:1]), v hs[0:1] -28 to 58 v rated continuous output current per channel (3) i hs[0:1] 9.0 a maximum allowable energy dissipation per channel and two parallel channels, single-pulse method (4) e cl [0:1]_sing 480 mj maximum allowable energy dissipation per channel and two parallel channels, repetitive-pulses condition. 1 (5) e cl [0:1]_rep1 > 350 mj maximum allowable energy dissipation per channel and two parallel channels, repetitive-pulses condition. 2 (6) e cl [0:1]_rep2 > 350 mj esd voltage (7) human body model (hbm) for hs[0:1], vpwr and gnd human body model (hbm) for other pins charge device model (cdm) package corner pins (1, 13, 19, 20) all other pins v esd1 v esd2 v esd3 v esd4 8000 2000 750 500 v notes: 1. concerned input pins are: conf[0:1], rstb, si, sclk, clock, and csb. 2. concerned output pins are: csns, sync, and fsb. 3. output current rating valid as long as ma ximum junction temperature is not exceeded. for computation of the maximum allowable output current, the thermal resistance of the package & th e underlying heatsink must be taken into account 4. single pulse energy dissipation, single-pulse short-circuit method (l l = 2.0 mh, r = 30 m : v pwr = 28 v, t j = 150 q c initial). 5. dissipation during repetitive cycl es: switch off upon short-circuit (l l = 20 h, r = 200 m : v pwr = 28 v, t j = 125 q c initial, f s <2.0 hz). 6. dissipation during repetitive cycle s: switch off upon short-circuit (l l = 40 h, r = 400 m : v pwr = 28 v, t j = 125 q c initial, f s <2.0 hz). 7. esd testing is performed in accordance with the human body model (hbm) (c zap = 100 pf, r zap = 1500 : ), and the charge device model (cdm), robotic (c zap = 4.0 pf). analog integrated circuit device data freescale semiconductor 7 06XS4200 electrical ch aracteristics maximum ratings thermal ratings operating temperature ambient junction t a t j - 40 to 125 - 40 to 150 q c storage temperature t stg - 55 to 150 q c thermal resistance / junction to case r t jc <1.0 q c/ w reflow peak temperature on device pins during soldering (8) , (9) t solder 260 q c notes: 8. 10 seconds maximum duration. not designed for immersion solder ing. exceeding these limits may cause malfunction or permanent damage to the device. msl level will be specified later. 9. freescale?s package reflow capability meets pb-free requir ements for jedec standard j-std-020. for peak package reflow temperature and moisture sensitivity levels (msl), go to www.fr eescale.com, search by part number [e.g. remove prefixes/suffixe s and enter the core id to view all orderable parts. (i.e. mc33xxxd enter 33xxx), and review parametrics. table 2. maximum ratings (continued) all voltages are relative to ground unless mentioned othe rwise. exceeding these ratings may cause permanent damage. parameter symbol maximum ratings unit analog integrated circuit device data 8 freescale semiconductor 06XS4200 electrical characteristics static electrical characteristics static electrical characteristics table 3. static electric al characteristics unless specified otherwise: 8.0 v d v pwr d 36 v, 3.0 v d v dd d 5.5 v, - 40 q c d t a d 125 q c, gnd = 0 v. typical values are average values evaluated under nominal conditions t a = 25 c, v pwr = 28 v & v dd = 5.0 v, unless specified otherwise. parameter symbol min typ max unit supply electrical characteristics supply voltage range: full specification compliant extended mode (10) v pwr 8.0 6.0 24 ? 36 58 v v pwr supply current, device in wake-up mode, channel on, open-load outputs in on-state, hs[0 : 1] open, in[0:1] > v ih i pwr(on) ? 6.5 8.0 ma v pw r supply current, device in wake-up mode (standby), channel off open-load in off-state detection disabled, hs[0 : 1] shorted to ground with v dd = 5.5 v and rstb > v wake i pwr(sby) ? 6.5 8.0 ma sleep state supply current v pwr = 24 v, rstb = in[0:1] < v wake , hs[0 : 1] connected to ground t a = 25 c t a = 125 c i pwr(sleep) ? ? 3.0 ? 10.0 60.0 p a v dd supply voltage v dd(on) 3.0 ? 5.5 v v dd supply current at v dd = 5.5 v no spi communication 8.0 mhz spi communication (11) i dd(on) ? ? ? 5.0 2.2 ? ma v dd sleep state current at v dd = 5.5 v with or without v pwr i dd(sleep) ? ? 5.0 p a over-voltage shutdown threshold v pwr(ov) 39 42 45.5 v over-voltage shutdown hysteresis v pwr(ovhys) 0.2 0.8 1.5 v under-voltage shutdown threshold (12) v pwr(uv) 5.0 ? 6.0 v v pwr power-on-reset (por) voltage threshold (12) v pwr(por) 2.2 2.6 4.0 v v dd power-on-reset (por) voltage threshold (12) v dd(por) 1.5 2.0 2.5 v v dd supply failure voltage threshold (assumed v pwr > v pwr(uv) ) v dd(fail) 2.2 2.5 2.8 v notes 10. in extended mode, availability of several device functions (channel control, value of r ds(on) , over-temperature protection) is guaranteed, but compliance with the specified values in this document is not. below 6.0 v, the device is only protected from overheating (thermal shutdown). above v pwr(ov) , the channels can only be turned on when the ov er-voltage detection f unction has been disabled. 11. typical value guaranteed per design. 12. when the device recovers from under-voltage and returns to normal mode (6.0 v < v pwr < 58 v) before the end of the auto-retry period (see auto-retry ), the device will perform normally. when v pwr drops below v pwr(uv) , under-voltage is detected (see under-voltage fault (latchable fault) and emc performances ). analog integrated circuit device data 9 freescale semiconductor 06XS4200 electrical characteristics static electrical characteristics electrical characteristics of the output stage (hs0 and hs1) on-resistance, drain-to-source (i hs = 3.0 a, t j = 25 c) csns_ratio = 0 v pwr = 8.0 v v pwr = 28 v v pwr = 36 v r ds(on)25_0 ? ? ? ? ? ? 6.0 6.0 6.0 m : on-resistance, drain-to-source (i hs = 1.0 a, t j = 25 c) csns_ratio = 1 v pwr = 8.0 v v pwr = 28 v v pwr = 36 v r ds(on)25_1 ? ? ? ? ? ? 6.0 6.0 6.0 m : on-resistance, drain-to-source (i hs = 3.0 a,t j = 150 c) csns_ratio = 0 v pwr = 8.0 v v pwr = 28 v v pwr = 36 v r ds(on)150_0 ? ? ? ? ? ? 12 12 12 m : on-resistance, drain-to-source (i hs = 1.0 a,t j = 150 c) csns_ratio = 1 v pwr = 8.0 v v pwr = 28 v v pwr = 36 v r ds(on)150_1 ? ? ? ? ? ? 12 12 12 m : on-resistance, drain-to-source difference from one channel to the other in parallel mode (i hs = 1.0 a,t j = 150 c) csns_ratio = x ' r ds(on)150 -0.7 ? +0.7 m : on-resistance, source-drain (i hs = -3.0 a, t j = 150 c, v pwr = -24 v) r sd(on)150 ? ? 12 m : max. detectable wiring length (2.5 mm2) for severe short-circuit detection (see severe short-circuit fault (latchable fault) ): high slew rate selected medium slew rate selected: low slew rate selected: l short 14 30 60 48 100 200 80 170 340 cm over-current detection thres holds with csns_ratio bit = 0 (csr0) i _och1_0 i _och2_0 i _ocm1_0 i _ocm2_0 i _ocl1_0 i _ocl2_0 i _ocl3_0 90.0 58.3 36.1 22.2 15.0 10.0 5.0 110.0 70.0 43.3 26.7 18.0 12.0 6.0 128.3 81.7 50.6 31.1 21.0 14.0 7.0 a over-current detection thres holds with csns_ratio bit = 1(csr1) i _och1_1 i _och2_1 i _ocm1_1 i _ocm2_1 i _ocl1_1 i _ocl2_1 i _ocl3_1 30.6 19.4 12.0 7.4 5.0 3.3 1.6 36.7 23.3 14.4 8.9 6.0 4.0 2.0 42.8 27.2 16.9 10.4 7.0 4.7 2.4 a table 3. static electrical characteristics (continued) unless specified otherwise: 8.0 v d v pwr d 36 v, 3.0 v d v dd d 5.5 v, - 40 q c d t a d 125 q c, gnd = 0 v. typical values are average values evaluated under nominal conditions t a = 25 c, v pwr = 28 v & v dd = 5.0 v, unless specified otherwise. parameter symbol min typ max unit analog integrated circuit device data 10 freescale semiconductor 06XS4200 electrical characteristics static electrical characteristics output (hs[x]) leakage current in sleep state (positive value = outgoing) v hs,off = 0 v (v hs,off = output voltage in off state) v hs,off = v pwr , device in sleep state (v pwr = 24 v max.) i out_leak ? -40.0 ? ? +16 +5.0 a switch turn-on threshold for supply over-voltage (v pwr -gnd) v d_gnd(clamp) 58 ? 66 v switch turn-on threshold for dr ain-source over-voltage (@ i hs = 100 ma) v ds(clamp) 58 ? 66 v switch turn-on threshold for drain- source over-voltage difference from one channel to the other in parallel mode (@ i hs = 100 ma) ' v ds(clamp) -2.0 ? +2.0 v current sensing ratio (13) csns_ratio bit = 0 (high-current mode) csns_ratio bit = 1 (low-current mode) c sr0 c sr1 ? ? 1/5000 1/1666.6 ? ? ? minimum measurable load current with compensated error (14) < 35% i _load_min ? ? 175 ma csns leakage current in off state (csnsx_en = 0, csns_ratio bit_x = 0) i csr_leak -4.0 ? +4.0 a systematic offset error (see current sense errors ) i _load_err_sys ? 15 ? ma random offset error i _load_err_rand -360 ? 360 ma csns pin current sourcing c apability, absolute upper limit i csns,max 5.15 ? ? ma e sr0 output current sensing error (%, uncompensated (15) ) at output current level (sense ratio c sr0 selected): t j =-40 q c 9.0 a 4.5 a 2.25 a 1.13 a t j =125 q c 9.0 a 4.5 a 2.25 a 1.13 a t j =25 to 125 q c 9.0 a 4.5 a 2.25 a 1.13 a e sr0_err -13 -12 -17 -31 -10 -9.0 -12 -19 -10 -9.0 -12 -22 ? ? ? ? ? ? ? ? ? ? ? ? 13 12 17 31 10 9.0 12 19 10 9.0 12 22 % table 3. static electrical characteristics (continued) unless specified otherwise: 8.0 v d v pwr d 36 v, 3.0 v d v dd d 5.5 v, - 40 q c d t a d 125 q c, gnd = 0 v. typical values are average values evaluated under nominal conditions t a = 25 c, v pwr = 28 v & v dd = 5.0 v, unless specified otherwise. parameter symbol min typ max unit analog integrated circuit device data freescale semiconductor 11 06XS4200 electrical ch aracteristics static electrical characteristics e sr0 output current sensing error (%, after offset compensation (14) ) at output current level (sense ratio c sr0 selected): t j =-40 q c 9.0 a 4.5 a 2.25 a 1.13 a t j =125 q c 9.0 a 4.5 a 2.25 a 1.13 a t j =25 to 125 q c 9.0 a 4.5 a 2.25 a 1.13 a e sr0_err (comp) -10 -10 -10 -10 -9.0 -8.0 -9.0 -9.0 -9.0 -8.0 -9.0 -9.0 ? ? ? ? ? ? ? ? ? ? ? ? 10 10 10 10 9.0 8.0 9.0 9.0 9.0 8.0 9.0 9.0 % e sr1 output current sensing error (%, uncompensated (15) ) at output current level (sense ratio c sr1 selected): t j =-40 q c 2.25 a t j =125 q c 2.25 a t j =25 to 125 q c 2.25 a e sr1_err -16 -12 -12 ? ? ? 16 12 12 % notes: 13. current sense ratio c srx = i csns / (i hs[x] +i _load_err_sys ) 14. see note (15) , but with i csns_meas obtained after compensation of i _load_err_rand (see activation and use of offset compensation ). further accuracy improvements can be obtained by performing a 1- or 2 point calibration 15. e srx_err =(i csns_meas / i csns_model ) -1, with i csns_model = (i(hs[x])+ i _load_err_sys ) * c srx , (i _load_err_sys defined above, see section current sense error model ). with this model, load current becomes: i(hs[x]) = i csns / csr x - i _load_err_sys table 3. static electrical characteristics (continued) unless specified otherwise: 8.0 v d v pwr d 36 v, 3.0 v d v dd d 5.5 v, - 40 q c d t a d 125 q c, gnd = 0 v. typical values are average values evaluated under nominal conditions t a = 25 c, v pwr = 28 v & v dd = 5.0 v, unless specified otherwise. parameter symbol min typ max unit analog integrated circuit device data 12 freescale semiconductor 06XS4200 electrical characteristics static electrical characteristics e sr1 output current sensing error (% after offset compensation (16) ) at output current level (sense ratio c sr1 selected): t j =-40 q c 2.25 a 0.75 a 0.375 a 0.225 a t j =125 q c 2.25 a 0.75 a 0.375 a 0.225 a t j =25 to 125 q c 2.25 a 0.75 a 0.375 a 0.225 a e sr1_err (comp) -10 -11 -18 -29 -8.0 -10 -12 -16 -8.0 -10 -13 -21 ? ? ? ? ? ? ? ? ? ? ? ? 10 11 18 29 8.0 10 12 16 8.0 10 13 21 % e sr0 output current sensing error in parallel mode (%, uncompensated (17) ) at outputs current level (sense ratio c sr0 selected): t j =-40 q c 9.0 a 4.5 a t j =125 q c 9.0 a 4.5 a t j =25 to 125 q c 9.0 a 4.5 a e sr0_err_par -10 -11 -8.0 -8.0 -8.0 -8.0 ? ? ? ? ? ? 10 11 8.0 8.0 8.0 8.0 % notes: 16. see note (17) , but with i csns_meas obtained after compensation of i _load_err_rand (see activation and use of offset compensation ). further accuracy improvements can be obtained by performing a 1- or 2 point calibration. 17. e srx_err =(i csns_meas / i csns_model ) -1, with i csns_model = (i(hs[x])+ i _load_err_sys ) * c srx , (i _load_err_sys defined above, see section current sense error model ). with this model, load current becomes: i(hs[x]) = i csns / csr x - i _load_err_sys table 3. static electrical characteristics (continued) unless specified otherwise: 8.0 v d v pwr d 36 v, 3.0 v d v dd d 5.5 v, - 40 q c d t a d 125 q c, gnd = 0 v. typical values are average values evaluated under nominal conditions t a = 25 c, v pwr = 28 v & v dd = 5.0 v, unless specified otherwise. parameter symbol min typ max unit analog integrated circuit device data 13 freescale semiconductor 06XS4200 electrical characteristics static electrical characteristics electrical characteristics of the output stage (hs0 and hs1) (continued) current sense clamping voltage (condition: r(csns) > 10 kohm) v cl(csns) 5.5 ? 7.5 v open-load detection current threshold in off state (18) i old(off) 30 ? 100 p a open-load fault detection voltage threshold (18) v old(thres) 4.0 ? 5.5 v open-load detection current threshold in on state (see open-load detection in on state (ol_on) ): csns_ratio bit = 0 csns_ratio bit = 1 (fast slew rate sr[1:0] = 10 mandatory for this function) i old(on) 200.0 5.0 500.0 7.0 999.9 10 ma time period of the periodically activa ted open-load in on state detection for csns_ratio bit = 1 t olled 105 150 195 ms output shorted-to-v pwr detection voltage threshold (channel in off state) v osd(thres) v pwr -1.2 v pwr -0.8 v pwr -0.4 v switch turn-on threshold for negative output voltages (protects against negative transients) - (measured at i out = 100 ma, channel in off state) v cl -35 ? -24 v switch turn-on threshold for negative output voltages difference from one channel to the other in parallel mode - (measured at i out = 100 ma, channel in off state) ' v cl -2.0 ? +2.0 v switching state (on/off) discrimination thresholds v hs_th 0.45*v pwr 0.5*v pwr 0.55*v pwr v shutdown temperature (power mosfet junction; 6.0 v < v pwr < 58 v) t sd 160 175 190 q c notes: 18. minimum required value of open-load impedance for detection of open-load in off-state: 200 k : .(v old(thres) = v hs @ i old(off) ) table 3. static electrical characteristics (continued) unless specified otherwise: 8.0 v d v pwr d 36 v, 3.0 v d v dd d 5.5 v, - 40 q c d t a d 125 q c, gnd = 0 v. typical values are average values evaluated under nominal conditions t a = 25 c, v pwr = 28 v & v dd = 5.0 v, unless specified otherwise. parameter symbol min typ max unit analog integrated circuit device data 14 freescale semiconductor 06XS4200 electrical characteristics static electrical characteristics electrical characteristics of the control interface pins logic input voltage, high (19) v ih 2.0 ? 5.5 v logic input voltage, low (19) v il -0.3 ? 0.8 v wake-up threshold voltage (in[0:1] and rstb) (20) v wake 1.0 ? 2.2 v internal pull-down current source (on inputs: clock, sclk and si) (21) i dwn 5.0 ? 20 p a internal pull-up current source (input csb) (22) i up_csb 5.0 ? 20 p a internal pull-up current source (input conf[0:1]) (23) i up_conf 25 ? 100 p a capacitance of so, fsb and fsob pins in tri-state c so ? ? 20 pf internal pull-down resistance (rstb and in[0:1]) r dwn 125 250 500 k : input capacitance (24) c in ? 4.0 12 pf electrical characteristics of the control interface pins (continued) so high-state output voltage (i oh = 1.0 ma) v soh v dd -0.4 ? ? v sync, so, fsob and fsb low-state output voltage (i ol = -1.0 ma) v sol ? ? 0.4 v sync, so, csns, fsob and fsb tri-state leakage current: ( 0 v < v(so) < v dd , or v(fs) or v(sync) = 5.5 v, or v(fso) = 36 v or v(csns) = 0 v) i so(leak) - 2.0 0 2.0 p a conf[0:1]: required values of the external pull-down resistor lighting applications dc motor applications r conf 1.0 50 ? ? 10 infinite k : notes 19. high and low voltage ranges apply to si, csb, sclk, rstb, in [0:1] and clock input signals. the in[0:1] signals may be derive d from v pwr and can tolerate voltages up to 58 v. 20. voltage above which the device will wake-up 21. valid for v si > 0.8 v and v sclk > 0.8 v and v clock > 0.8 v. 22. valid for v csb < 2.0 v. csb has an internal pull-up current source derived from v dd 23. pins conf[0:1] are connected to an internal current source, derived from an internal voltage regulator (v reg ~ 3.0 v). 24. input capacitance of si, csb, sclk, rstb, in[0:1], conf[0:1 ], and clock pins. this parameter is guaranteed by the manufactur ing process but is not tested in production. table 3. static electrical characteristics (continued) unless specified otherwise: 8.0 v d v pwr d 36 v, 3.0 v d v dd d 5.5 v, - 40 q c d t a d 125 q c, gnd = 0 v. typical values are average values evaluated under nominal conditions t a = 25 c, v pwr = 28 v & v dd = 5.0 v, unless specified otherwise. parameter symbol min typ max unit analog integrated circuit device data freescale semiconductor 15 06XS4200 electrical ch aracteristics dynamic electrical characteristics dynamic electrical characteristics table 4. dynamic electri cal characteristics unless specified otherwise: 8.0 v d v pwr d 36 v, 3.0 v d v dd d 5.5 v, - 40 q c d t a d 125 q c, gnd = 0 v. typical values are average values evaluated under nominal conditions t a = 25 c,v pwr = 28 v & v dd = 5.0 v, unless specified otherwise. parameter symbol min typ max unit output voltage switching characteristics rising and falling edge medium slew rate (sr[1:0] = 00) (25) v pwr = 16 v v pwr = 28 v v pwr = 36 v sr r_00 sr f_00 0.164 0.28 0.34 ? ? ? 0.65 0.79 0.90 v/ p s rising edge low slew rate (sr[1:0] = 01) (25) v pwr = 16 v v pwr = 28 v v pwr = 36 v sr r_01 sr f_01 0.081 0.14 0.17 ? ? ? 0.32 0.395 0.45 v/ p s rising edge high slew rate / sr[1:0] = 10) (25) v pwr = 16 v v pwr = 28 v v pwr = 36 v sr r_10 sr f_10 0.29 0.55 0.68 ? ? ? 1.30 1.58 1.80 v/ p s rising/falling edge slew rate matching per channel 16 v < v pwr < 36 v sr r /sr f 0.75 ? 1.2 edge slew rate difference from one channel to the other in parallel mode (25) 16 v < v pwr < 36 v sr[1:0] = 00 sr[1:0] = 01 sr[1:0] = 10 ' sr -0.1 -0.06 -0.14 0.0 0.0 0.0 +0.1 +0.06 +0.14 v/ p s output turn-on and turn-off delays (medium slew rate: sr[1:0] = 00) (26) 16 v < v pwr < 36 v t dly_00 39 - 145 p s output turn-on and turn-off delays (low slew rate / sr[1:0] = 01) (26) 16 v < v pwr < 36 v t dly_01 50 - 280 p s output turn-on and turn-off delays (high slew rate / sr[1:0] = 10) (26) 16 v < v pwr < 36 v t dly_10 22 - 80 p s turn-on and turn-off delay time matching per channel (t dly(on) - t dly(off) ) f pwm = 400 hz, 16 v < v pwr < 36 v , duty cycle on in[x] = 50 %, sr[1:0] = 00 ' t rf_00 -25 0.0 25 p s turn-on and turn-off delay time matching per channel (t dly(on) - t dly(off) ) f pwm = 200 hz, 16 v < v pwr < 36 v , duty cycle on in[x] = 50 %, sr[1:0] = 01 ' t rf_01 -60 0.0 60 p s turn-on and turn-off delay time matching per channel (t dly(on) - t dly(off) ) f pwm = 1.0 khz, 16 v < v pwr < 36 v , duty cycle on in[x] = 50 %, sr[1:0] = 10 ' t rf_10 -13 0.0 13 p s notes 25. rising and falling edge slew rates specified for a 20% to 80% voltage variation on a 10.0 : resistive load (see figure 4 ). 26. turn-on delay time measured as delay between a rising edge of the channel control signal (in[0 : 1] = 1) and the associated rising edge of the output voltage up to: v hs[0 : 1] = v pwr / 2 (where r l = 5.0 : ). turn-off delay time is measured as time between a falling edge of the channel control signal (in[0 : 1] = 0) and the associated falling edge of the output voltage up to the instant at which: v hs[0 : 1] = v pwr / 2 (r l = 10.0 : ) analog integrated circuit device data 16 freescale semiconductor 06XS4200 electrical characteristics dynamic electrical characteristics switching characteristics (continued) delay time difference from one channel to the other in parallel mode (27) 16 v < v pwr < 36 v sr[1:0] = 00 sr[1:0] = 01 sr[1:0] = 10 ' t (dly) -41 -21 -12 0.0 0.0 0.0 41 21 12 p s fault detection delay time (28) t fault ? 5.0 8.0 p s output shutdown delay time (29) t detect ? 12.0 17 p s current sense output settling time for sr[1:0] = 00 (medium slew rate) (30) 16 v < v pwr < 36 v t csnsval_00 0.0 - 200 p s current sense output settling time for sr[1:0] = 01(low slew rate) (30) 16 v < v pwr < 36 v t csnsval_01 0.0 - 315 p s current sense output settling time for sr[1:0] = 10 (high slew rate) (30) 16 v < v pwr < 36 v t csnsval_10 0.0 - 165 p s sync output signal delay for sr[1:0] = 00 (medium sr) (30) t syncval_00 46 - 155 p s sync output signal delay for sr[1:0] = 01 (low sr) (30) t syncval_01 55 - 280 p s sync output signal delay for sr[1:0] = 10 (high sr) (30) t syncval_10 22 - 80 p s recommended sync_to_read delay sr[1:0] = 00 (medium slew rate) (30) t synread_00 0.0 - 200 s recommended sync_to_read delay sr[1:0] = 01 (low slew rate) (30) t synread_01 0.0 - 200 s recommended sync_to_read delay sr[1:0] = 10 (high slew rate) (30) t synread_10 0.0 - 200 s upper over-current threshold duration t och1 t och2 6.0 12.0 8.6 17.2 11.2 22.4 ms medium over-current threshold duration (conf = 0; lighting profile) t ocm1_l t ocm2_l 48 96 67 137 87 178 ms medium over-current threshold duration (conf = 1; dc motor profile) t ocm1_m t ocm2_m 150 301 214 429 278 557 ms frequency & pwm duty cycle ranges (31) (protections fully operational, see protective functions ) switching frequency range - direct inputs f control 0.0 ? 1000 hz switching frequency range - external clock with internal pwm (recommended) f pwm_ext 20 ? 1000 hz switching frequency range - internal clock with internal pwm (recommended) f pwm_int 60 ? 1000 hz duty cycle range r control 0.0 ? 100 % notes: 27. rising and falling edge slew rates specified for a 20% to 80% voltage variation on a 10.0 : resistive load (see figure 4 ). 28. time required to detect and report the fault to the fsb pin. 29. time required to switch off the channel after detection of over -temperature (ot), over-current (oc), sc or uv error (time me asured between start of the negative edge on the fsb pin and the falling edge on the output voltage until v(hs[0:1)) = 50% of v pwr 30. settling time ( = t csnsval_xx ), sync output signal delay ( = t syncval_xx ) and read-out delay ( = t synread_xx ) are defined for a stepped load current (100 ma< i(load) |