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| ! ! " # $ % & ' $ ( ) *& "&+ , ! - # ./ # 0 % ! # ! ./ # 0 % 1 2% - 3 ! 4 % * 4 % 5 6 ! 78 8 7!8 6 9 . : 5 . 8 ! ;6< 7!8!=< 9 IRG4PC30UPBF ultrafast speed igbt insulated gate bipolar transistor pd - 94923 e c g n-channel to-247ac features !"# $ %$&' ( ) * $ + % * ' # ,-. $ %$&'/ *( ) %$&'/ 0 )1 1 ( * $ +%2%$&'/ = 34 5674!% 56#- * - >>> !8 * 4 5 ?5 ( 4 6 81 >>> @a * - " ; 5 ,% >>> 1 a a + 78!9 >>> 7b9 a www.irf.com 1 8 IRG4PC30UPBF 2 www.irf.com c ( + 7 9 d e !" c ( + 7 9 d f8! ! 1 4 ? 8f c ( + 7 9 d !f e ! 2 0, d !e d * d $8 d 266 0, d ef ! !"5 1f ? d $e ! ! 5 * ? 2 4 + ' d 8! d , g g 266 4 + ' d 8 d - 4 ? 8 !5 !!5 ! 5 !1 4 + ' d 8 8 2 0, d d ! 5 * d ! d !"5 1f 266 0, d !f d ! 5 * ? ? d !1 d , g g 4 + ' d 8e d - 4 ? 8 ! 5 !1 ' d ! d h . 6 % % % d !! d 2 % % d e d %? 4 ? 8 e *& 6 % d !1 d i !8.hb d d 5 j" !f d d 5 !8" ? ? % 668 6 d 8 d @ 5 !8 " d !8$ 8! !" ! 4 d 8 d " 4 ? 85 d 8$ d !" 5 ! ( + + 8 d 8 5 j" ? @ ? % 668 6 + + d ! d @ 5 j" ? 8! f8 d 4 = ! 5 !" d d 5 d d 8 5 !5 d d ! 5 5 ! ( ' d d )! " ) !"# k ( j" $ !"# # + fj l , 6 8!m8 # + 8j 5 +8 *% & l 5 % + ;, /8 n % 8 7 4 6 8 ! ; 9 fm7 95 5 ' !jh5 * ? 5 74 6 8 ! 9 *% & l % + ;, / n % 8 IRG4PC30UPBF www.irf.com 3 9 (!%5% : (!%5% ; 0 10 20 30 40 0.1 1 10 100 f, frequency (khz) load current (a) a 60% of rated voltage ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j triangular wave: clamp voltage: 80% of rated power dissipation = 24w 0.1 1 10 100 0.1 1 10 ce c i , collector-to-emitter current (a) v , collector-to-emitter voltage (v) t = 150c t = 25c j j v = 15v 20s pulse width ge a 0.1 1 10 100 5 6 7 8 9 101112 c i , collector-to-emitter current (a) ge t = 25c t = 150c j j v , gate-to-emitter voltage (v) a v = 10v 5s pulse width cc IRG4PC30UPBF 4 www.irf.com ! " # ! 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 ce v , collector-to-emitter voltage (v) v = 15v 80s pulse width ge a t , junction temperature (c) j i = 24a i = 12a i = 6.0a c c c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c 0 5 10 15 20 25 25 50 75 100 125 150 maximum dc collector current (a t , case temperature (c) c v = 15v ge a IRG4PC30UPBF www.irf.com 5 $%# ! $%# & ' & # & " # " # 0 400 800 1200 1600 2000 1 10 100 ce c, capacitance (pf) v , collector-to-emitter voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c ge ies ge gc ce res gc oes ce gc c ies c res c oes 0 4 8 12 16 20 0 1020304050 ge v , gate-to-emitter voltage (v) g q , total gate charge (nc) a v = 400v i = 12a ce c 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 total switching losses (mj) a i = 6.0a i = 12a i = 24a r = 23 ? v = 15v v = 480v c c c g ge cc j t , junction temperature (c) 0.2 0.3 0.4 0.5 0 102030405060 g total switching losses (mj) r , gate resistance ( ? ) a v = 480v v = 15v t = 25c i = 12a cc ge j c IRG4PC30UPBF 6 www.irf.com $( $%# 0.0 0.4 0.8 1.2 1.6 0102030 c total switching losses (mj) i , collector-to-emitter current (a) a r = 23 ? t = 150c v = 480v v = 15v g j cc ge 0.1 1 10 100 1000 1 10 100 100 0 c ce ge v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) safe operating area v = 20v t = 125c ge j IRG4PC30UPBF www.irf.com 7 d.u.t. 50v l v * c * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor will increase to obtain rated id. 1000v . % ( 8' . < . .' . 480f 960v t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) = 8 >( 50v driver* 1000v d.u.t. i c c v l = 8 ' . IRG4PC30UPBF 8 www.irf.com 0 9 ; lead assignments notes: - d - 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) 3.65 (.143) 3.55 (.140) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 123 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-247-ac. 1 - gate 2 - drain 3 - source 4 - drain lead assignments hexfet 1 - gate 2 - drain 3 - source 4 - drain igbt 1 - gate 2 - collector 3 - emitter 4 - collector example: as s e mb le d on ww 35, 2000 lot code 5657 with assembly t his is an irfpe30 in the as sembly line "h" 035h logo int ernational rect ifier irfpe30 lot code assembly 56 57 part number dat e code year 0 = 2000 we e k 35 line h note: "p" in assembly line position indicates "lead-free" data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/03 note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ |
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