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insulated gate bipolar transistor 7/26/04 www.irf.com 1 IRGB4B60KPBF irgs4b60k irgsl4b60k v ces = 600v i c = 6.8a, t c =100c t sc > 10s, t j =150c v ce(on) typ. = 2.1v features low vce (on) non punch through igbt technology. 10s short circuit capability. square rbsoa. positive vce (on) temperature coefficient. maximum junction temperature rated at 175c. to-220 is available in pbf as a lead-free. benefits benchmark efficiency for motor control. rugged transient performance. low emi. excellent current sharing in parallel operation. d 2 pak irgs4b60k to-262 irgsl4b60k to-220 IRGB4B60KPBF e c g n-channel absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 12 i c @ t c = 100c continuous collector current 6.8 a i cm pulse collector current (ref.fig.c.t.5) 24 i lm clamped inductive load current 24 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 63 w p d @ t c = 100c maximum power dissipation 31 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) thermal / mechanical characteristics parameter min. typ. max. units r jc junction-to-case- igbt ??? ??? 2.4 c/w r cs case-to-sink, flat, greased surface ??? 0.50 ??? r ja junction-to-ambient ??? ??? 62 r ja junction-to-ambient (pcb mount, steady state) ??? ??? 40 wt weight ??? 1.44 ??? g
IRGB4B60KPBF irgs/sl4b60k 2 www.irf.com note to are on page 16 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig. v (br)ces collector-to-emitter breakdown voltage 600??v v ge = 0v, i c = 500a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ?0.28?v/c v ge = 0v, i c = 1ma (25c-150c) ?2.12.5 i c = 4.0a, v ge = 15v, t j = 25c 5,6,7 v ce(on) collector-to-emitter voltage ? 2.5 2.8 v i c = 4.0a, v ge = 15v, t j = 150c 9,10,11 ?2.62.8 i c = 4.0a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 3.5 4.5 5.5 v v ce = v ge , i c = 250a 9,10,11 ? v ge(th) / ? t j threshold voltage temp. coefficient ? -8.1 ? mv/c v ce = v ge , i c = 1ma (25c-150c) 12 gfe forward transconductance ? 1.7 ? s v ce = 50v, i c = 4.0a, pw = 80s ?1.0150 v ge = 0v, v ce = 600v i ces zero gate voltage collector current ? 54 300 a v ge = 0v, v ce = 600v, t j = 150c ? 300 800 v ge = 0v, v ce = 600v, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig. q g total gate charge (turn-on) ? 12 ? i c = 4.0a 23 q ge gate-to-emitter charge (turn-on) ? 1.7 ? nc v cc = 400v ct1 q gc gate-to-collector charge (turn-on) ? 6.5 ? v ge = 15v e on turn-on switching loss ? 73 80 i c = 4.0a, v cc = 400v ct4 e off turn-off switching loss ? 47 53 j v ge = 15v, r g = 100 ? , l = 2.5mh e tot total switching loss ? 120 130 t j = 25c t d(on) turn-on delay time ? 22 28 i c = 4.0a, v cc = 400v t r rise time ? 18 23 ns v ge = 15v, r g = 100 ? , l = 2.5mh ct4 t d(off) turn-off delay time ? 100 110 t j = 25c t f fall time ? 66 80 e on turn-on switching loss ? 130 150 i c = 4.0a, v cc = 400v ct4 e off turn-off switching loss ? 83 140 j v ge = 15v, r g = 100 ? , l = 2.5mh 13,15 e tot total switching loss ? 220 280 t j = 150c wf1,wf 2 t d(on) turn-on delay time ? 22 27 i c = 4.0a, v cc = 400v 14,16 t r rise time ? 18 22 ns v ge = 15v, r g = 100 ? , l = 2.5mh ct4 t d(off) turn-off delay time ? 120 130 t j = 150c wf1 t f fall time ? 79 89 wf2 c ies input capacitance ? 190 ? v ge = 0v c oes output capacitance ? 25 ? pf v cc = 30v 22 c res reverse transfer capacitance ? 6.2 ? f = 1.0mhz rbsoa reverse bias safe operating area full square t j = 150c, i c = 24a, vp = 600v 4 v cc =500v,v ge = +15v to 0v,r g = 100 ? ct2 scsoa short circuit safe operating area 10 ? ? s t j = 150c, vp = 600v, r g = 100 ? ct3 v cc =360v,v ge = +15v to 0v wf3
IRGB4B60KPBF irgs/sl4b60k www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c; t j 150c fig. 4 - reverse bias soa t j = 150c; v ge =15v 0 20 40 60 80 100 120 140 160 180 t c (c) 0 10 20 30 40 50 60 70 p t o t ( w ) 0 20 40 60 80 100 120 140 160 180 t c (c) 0 2 4 6 8 10 12 i c ( a ) 10 100 1000 v ce (v) 0 1 10 100 i c a ) 0 1 10 100 1000 10000 v ce (v) 0.01 0.1 1 10 100 i c ( a ) 10ms dc 1ms 100s
IRGB4B60KPBF irgs/sl4b60k 4 www.irf.com fig. 7 - typ. igbt output characteristics t j = 150c; tp = 80s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80s fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80s 0 2 4 6 8 10 12 v ce (v) 0 5 10 15 20 25 30 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 2 4 6 8 10 12 v ce (v) 0 5 10 15 20 25 30 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 2 4 6 8 10 12 v ce (v) 0 5 10 15 20 25 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v
IRGB4B60KPBF irgs/sl4b60k www.irf.com 5 fig. 9 - typical v ce vs. v ge t j = 25c fig. 8 - typical v ce vs. v ge t j = -40c fig. 11 - typ. transfer characteristics v ce = 360v; tp = 10s fig. 10 - typical v ce vs. v ge t j = 150c 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 2.0a i ce = 4.0a i ce = 8.0a 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 2.0a i ce = 4.0a i ce = 8.0a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 2.0a i ce = 4.0a i ce = 8.0a 0 5 10 15 20 v gs , gate-to-source voltage (v) 0 5 10 15 20 25 30 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c
IRGB4B60KPBF irgs/sl4b60k 6 www.irf.com fig. 13 - typ. switching time vs. i c t j = 150c; l=2.5mh; v ce = 400v r g = 100 ? ; v ge = 15v fig. 12 - typ. energy loss vs. i c t j = 150c; l=2.5mh; v ce = 400v, r g = 100 ? ; v ge = 15v fig. 15 - typ. switching time vs. r g t j = 150c; l=2.5mh; v ce = 400v i ce = 4.0a; v ge = 15v fig. 14 - typ. energy loss vs. r g t j = 150c; l=2.5mh; v ce = 400v i ce = 4.0a; v ge = 15v 12345678910 i c (a) 0 50 100 150 200 250 300 350 e n e r g y ( j ) e off e on 0 100 200 300 400 500 r g ( ? ) 0 50 100 150 200 250 300 350 e n e r g y ( j ) e on e off 0 2 4 6 8 10 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 100 200 300 400 500 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on
IRGB4B60KPBF irgs/sl4b60k www.irf.com 7 fig. 16 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 17 - typical gate charge vs. v ge i ce = 4.0a; l = 3150h 02468101214 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 300v 400v 0 20 40 60 80 100 v ce (v) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres fig 18. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.0429 0.000001 1.3417 0.000178 1.0154 0.000627 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri
IRGB4B60KPBF irgs/sl4b60k 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit l rg vcc diode clamp / dut dut / driver - 5v rg vcc dut r = v cc i cm l rg 80 v dut 480v + - dc driver dut 360v
IRGB4B60KPBF irgs/sl4b60k www.irf.com 9 fig. wf3- typ. s.c waveform @ t c = 150c using fig. ct.3 fig. wf1- typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2- typ. turn-on loss waveform @ t j = 150c using fig. ct.4 -100 0 100 200 300 400 500 600 700 0.4 0.6 0.8 1 1.2 time (us) vce (v) -2 0 2 4 6 8 10 12 14 ice (a) tf eoff loss 90% ice 5% vce 5% ice vce ic e -100 0 100 200 300 400 500 600 700 0.35 0.45 0.55 0.65 time (us) vce (v) -2 0 2 4 6 8 10 12 14 ice (a) eo n loss tr 90% ice 10% ice 5% vce vce ic e -50 0 50 100 150 200 250 300 350 400 30 40 50 60 70 time (us) -5 0 5 10 15 20 25 30 35 40 i (a) vce ic e i ce (a) v ce (v)
IRGB4B60KPBF irgs/sl4b60k 10 www.irf.com lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copac k 1- gate 2- collector 3- emitter 4- collector

dimensions are shown in millimeters (inches)

example: in the assembly line "c" t his is an irf1010 lot code 1789 as s e mb le d on ww 19, 1997 part numbe r as s e mb l y lot code dat e code year 7 = 1997 line c we e k 19 logo rectifier int e rnat ional note: "p" in assembly line position indicates "lead-free"
IRGB4B60KPBF irgs/sl4b60k www.irf.com 11

dimensions are shown in millimeters (inches) note: "p" in assembly line pos ition i ndi cates "l ead- f r ee" f 530s this is an irf530s wit h l ot code 8024 assembled on ww 02, 2000 in the assembly line "l" assembly lot code int ernat ional rectifier logo part number dat e code ye ar 0 = 2000 week 02 line l f 530s a = assembly site code we e k 02 p = de s ignat e s l e ad-f r e e product (optional) rectifier int e rnat ional logo lot code as s e mb l y year 0 = 2000 dat e code part number
IRGB4B60KPBF irgs/sl4b60k 12 www.irf.com to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) as s e mb l y lot code re ct if ier int ernational as s e mb le d on ww 19, 1997 note: "p" in as s embly line pos i ti on i ndi cates "l ead- f r ee" in the assembly line "c" logo t his is an irl 3103l l ot code 1789 example: line c dat e code we e k 19 ye ar 7 = 1997 part number part number logo lot code as s e mb l y int ernat ional rect if ier product (optional) p = de s ignat e s l e ad- f r e e a = as s e mb l y s it e code we e k 19 ye ar 7 = 1997 dat e code or
IRGB4B60KPBF irgs/sl4b60k www.irf.com 13 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/04 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site. to-220ab package is not recommended for surface mount application. notes: v cc = 80% (v ces ), v ge = 20v, l = 100h, r g = 50 ?. when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. energy losses include "tail" and diode reverse recovery, using diode fd059h06a5.

dimensions are shown in millimeters (inches) 3 4 4 trr f eed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl f eed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 ) 23.90 (.941 ) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362 ) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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