? 2000 ixys all rights reserved 1 - 2 advanced technical information v ces = 1700 v i c25 = 25 a v ce(sat) = 3.3 v ixbh 16n170 ixbt 16n170 g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad (ixbh) 98657 (9/99) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1700 v v ge(th) i c = 250 a, v ce = v ge 2.5 5 v i ces v ce = 0.8 v ces t j = 25 c50 a v ge = 0 v t j = 125 c 1.5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 3.3 v t j = 125 c 2.9 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1700 v v cgr t j = 25 c to 150 c; r ge = 1 m 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c25a i c90 t c = 90 c16a i cm t c = 25 c, 1 ms 40 a ssoa v ge = 15 v, t vj = 125 c, r g = 33 i cm =40 a (rbsoa) clamped inductive load v ces = 1350 v p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature for soldering smd devices for 10 s 260 c m d mounting torque (m3) 1.13/10 nm/lb.in. weight to-247 ad 6 g to-268 4 g to-268 (ixbt) g e high voltage, high gain bimosfet tm monolithic bipolar mos transistor features ? high blocking voltage jedec to-268 surface and jedec to-247 ad low conduction losses high current handling capability mos gate turn-on - drive simplicity molding epoxies meet ul 94 v-0 flammability classification applications ac motor speed control uninterruptible power supplies (ups) switched-mode and resonant-mode power supplies capacitor discharge circuits advantages high power density suitable for surface mounting easy to mount with 1 screw, (isolated mounting screw hole) ixys reserves the right to change limits, test conditions, and dimensions.
? 2000 ixys all rights reserved 2 - 2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 11 14 s pulse test, t 300 s, duty cycle 2 % c ies 1700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 83 pf c res 31 pf q g 69 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 13 nc q gc 24 nc t d(on) 35 ns t ri 25 ns t d(off) 600 1000 ns t fi 1110 1600 ns e off 12 16 mj t d(on) 35 ns t ri 28 ns e on 2.0 mj t d(off) 660 ns t fi 1600 ns e off 15 mj r thjc 0.83 k/w r thck (to-247) 0.25 k/w reverse diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = i c90 , v ge = 0 v, pulse test, 3.3 v t < 300 us, duty cycle d < 2% i rm i f = 25 a, v ge = 0 v, -di f /dt = 50 a/us 24 a t rr v r = 100a 360 ns inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 33 inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 33 ixbh 16n170 ixbt 16n170 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g to-247 ad outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 to-268aa (d 3 pak) min. recommended footprint ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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