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| inchange semiconductor product specification silicon pnp power transistors 2N6226 2n6227 2n6228 description ? with to-3 package ? low collector saturation voltage ? excellent safe operating area applications ? for high power audio;stepping motor and other linear applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2N6226 -100 2n6227 -120 v cbo collector-base voltage 2n6228 open emitter -140 v 2N6226 -100 2n6227 -120 v ceo collector-emitter voltage 2n6228 open base -140 v v ebo emitter-base voltage open collector -7 v i c collector current -6 a p d total power dissipation t c =25 ?? 150 w t j junction temperature 150 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 0.92 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2N6226 2n6227 2n6228 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2N6226 -100 2n6227 -120 v ceo(sus) collector-emitter sustaining voltage 2n6228 i c =-0.2a ;i b =0 -140 v v cesat collector-emitter saturation voltage i c =-4a; i b =-0.4a -1.2 v v be base-emitter on voltage i c =-3a ; v ce =-2v -1.8 v i ceo collector cut-off current v ce =rated v ceo ; i b =0 -5.0 ma i cbo collector cut-off current v cb =rated v cbo ; i e =0 -1.0 ma i ebo emitter cut-off current v eb =-7v; i c =0 -0.1 ma 2N6226 25 100 2n6227 20 80 h fe dc current gain 2n6228 i c =-3a ; v ce =-2v 15 60 f t transition frequency i c =-0.5a ; v ce =-4v 1 mhz inchange semiconductor product specification 3 silicon pnp power transistors 2N6226 2n6227 2n6228 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) |
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