features ? excellent h fe linearity ? complementary t o ktc407 6 applications ? general purpose switching m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage - 35 v v ceo collector - emitter voltage - 30 v v ebo emitter - base voltage - 5 v i c collector current - 500 m a p c collector power dissipation 100 m w r ja thermal resistance fro m j u nction to a mbient 1250 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown volta ge v (br) cbo i c = - 1 0 0 a , i e =0 - 35 v collector - emitter breakdown voltage v (br) c e o i c = - 1 ma, i b =0 - 30 v emitter - base breakdown voltage v (br)eb o i e = - 1 0 0 a , i c =0 - 5 v collector cut - off current i cbo v cb = - 35 v, i e =0 - 0.1 a emitter cut - off current i e bo v eb = - 5 v, i c =0 - 0.1 a h fe(1) v ce = - 1 v, i c = - 100 m a 70 240 dc current gain h fe(2) v ce = - 6 v, i c = - 400m a 25 collector - emitter saturation voltage v ce(sat) i c = - 10 0 m a, i b = - 1 0 ma - 0.25 v base - emitter voltage v b e v ce = - 1 v, i c = - 100 m a - 1 v transition frequency f t v c b = - 6 v,i c = - 20 ma , 200 mhz collector output capacitance c ob v cb = - 6 v, i e =0, f=1mhz 13 pf classification of h fe(1) , h fe(2) rank o(2) y(4) o y rang h fe ( 1 ) 70 C 140 120 C 240 h fe ( 2 ) 25 min 40 min marking zo zy zo zy so t C 3 23 1. base 2. emitter 3. collector KTA2015 transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
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