low capacitance bi-directi onal double esd protection di ode general description low capacitance bi-directional double esd protection diode in the small sot-23 plastic package designed to protect 2 data lines from the damage caused by esd and other transients applications z cellular handsets and accessories z portable electronics z computers and peripherals z communication systems z audio and video equipment features z bi-directional esd protection of 2 lines z low diode capacitance z max. peak pulse power :p pk =130w at tp=8/20us z low clamping voltage: v cl(r) =14v at i pp =12a z ultra low leakage current: i rm =1ua at v rwm =5v z esd protection > 30v iec61000-4-2;level 4 (esd) iec61000-4-5(surge);i pp =12a at tp=8/20us functional diagram sot-23 absolute ratings (t amb =25 c ) symbol parameter value units p pp peak pulse power (t p = 8/20 s) 130 w t l maximum lead temperature for soldering during 10s 260 c t stg storage temperature range -55 to +155 c t op operating temperature range -40 to +125 c t j maximum junction temperature 150 c v pp electrostatic discharge iec61000-4-2 (contact) iec61000-4-2 hmb mil-std 883 30 10 kv z willas electronic corp. 2012-09 SESOTA05BC
electrical parameter symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm i t test current v br breakdown voltage @ i t electrical characteristics maximum leakage current breakdown voltage maximum clamping voltage maximum pulse peak current maximum capacita nce rated stand-off voltage @ v rm 1ma v br 1a 1) 5a 1) tp=8/20us 0v, 1mhz v rm i rm v v cl i ppm c part numbers v a min typ max v v a pf SESOTA05BC 5.0 1.0 5.5 6.7 9.5 9.8 10 12 35 typical characteristics fig1. 8/20us pulse waveform according to iec61000-4-5 willas electronic corp. 2012-09 low capacitance bi-directi onal double esd protection di ode SESOTA05BC
fig2. esd pulse waveform fig3.peak pulse power dissipation as a according to iec 61000-4-2 function of pulse time;typical values application note electrostatic discharge (esd) is a major cause of failure in electronic systems. transient voltage suppressors (tvs) are an ideal choice for esd prot ection. they are capable of clamping the incoming transient to a low enough level such that damage to the protected semiconductor is prevented. surface mount tvs arrays offer the best choice for minimal lead inductance. they serve as parallel protection elements, connected between the signal line to ground. as the transient rises above the operating voltage of the device, the tvs array beco mes a low impedance path diverting the transient current to ground. the sesota 05 bc array is the ideal board evel protection of esd sensitive semiconductor components. the tiny sot-23 package allows design flexibility in the design of high density boards where the space saving is at a premium. this enables to shorten the routing and contributes to hardening against esd. willas electronic corp. 2012-09 low capacitance bi-directi onal double esd protection di ode SESOTA05BC
package mechanical data type number marking code SESOTA05BC 5b marking willas electronic corp. 2012-09 low capacitance bi-directi onal double esd protection di ode SESOTA05BC dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .086(2.20) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .013(0.35) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
|
