aot42s60/AOTF42S60 600v 39a a aa a mos tm power transistor v ds @ t j,max 700v i dm 166a r ds(on),max 0.099 w q g,typ 40nc e oss @ 400v 9.2 m j symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction temperature. AOTF42S60l aot42s60 AOTF42S60l 65 65 417 37.9 3.3 0.3 39 20 a 11 w 0.4 mj mj 39* 25* 234 39* 25* 3.3 0.3 25 2.5 1345 50 avalanche current c junction and storage temperature range t c =25c dv/dt power dissipation b single pulsed avalanche energy g p d repetitive avalanche energy c v a 166 t c =100c pulsed drain current c continuous drain current t c =25c i d 30 gate-source voltage the aot42s60 & AOTF42S60 have been fabricated using the advanced a mos tm high voltage process that is designed to deliver high levels of performance and robustness in switching applications. by providing low r ds(on) , q g and e oss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage 600 AOTF42S60 aot42s60 c/w w/ o c c thermal characteristics maximum junction-to-case c/w derate above 25 o c parameter -55 to 150 100 units v/ns maximum junction-to-ambient a,d 300 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds j c AOTF42S60 65 c/w maximum case-to-sink a 0.5 -- -- g d s www.freescale.net.cn 1/7 general description features
symbol min typ max units 600 - - 650 700 - - - 1 - 10 - i gss gate-body leakage current - - 100 n a v gs(th) gate threshold voltage 2.5 3.2 3.8 v - 0.085 0.099 w - 0.24 0.28 w v sd - 0.84 - v i s maximum body-diode continuous current - - 39 a i sm - - 166 a c iss - 2154 - pf c oss - 135 - pf c o(er) - 103 - pf c o(tr) - 344 - pf c rss - 2.7 - pf r g - 1.7 - w q g - 40 - nc q gs - 11.7 - nc q gd - 11.9 - nc t d(on) - 38.5 - ns t r - 53 - ns t d(off) - 136 - ns t f - 46 - ns t rr - 473 - ns i rm - 38.5 - a q rr - 10.5 - m c peak reverse recovery current i f =21a,di/dt=100a/ m s,v ds =400v v v gs =10v, i d =21a, t j =150c drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c m a v ds =0v, v gs =30v v ds =600v, v gs =0v v ds =5v,i d =250 m a v ds =480v, t j =150c zero gate voltage drain current body diode reverse recovery charge i f =21a,di/dt=100a/ m s,v ds =400v maximum body-diode pulsed current turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime body diode reverse recovery time i f =21a,di/dt=100a/ m s,v ds =400v reverse transfer capacitance bv dss v gs =10v, v ds =400v, i d =21a, r g =25 w turn-off fall time total gate charge v gs =10v, v ds =480v, i d =21a gate source charge gate drain charge v gs =10v, i d =21a, t j =25c switching parameters i dss effective output capacitance, time related i r ds(on) static drain-source on-resistance i s =21a,v gs =0v, t j =25c diode forward voltage input capacitance v gs =0v, v ds =100v, f=1mhz output capacitance v gs =0v, v ds =100v, f=1mhz gate resistance v gs =0v, v ds =0v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i d =250 a, v gs =0v, t j =150c effective output capacitance, energy related h v gs =0v, v ds =0 to 480v, f=1mhz a. the value of r q ja is measured with the device in a still air environ ment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is use d. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c, ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. l=60mh, i as =6.7a, v dd =150v, starting t j =25c h. c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss. i. c o(tr) is a fixed capacitance that gives the same chargin g time as c oss while v ds is rising from 0 to 80% v (br)dss. j. wavesoldering only allowed at leads. www.freescale.net.cn 2/7 aot42s60/AOTF42S60 600v 39a a aa a mos tm power transistor
typical electrical and thermal characteristics 0 10 20 30 40 50 60 70 80 0 5 10 15 20 v ds (volts) figure 1: on-region characteristics@25c i d (a) v gs =4.5v 6v 10v 7v 0.01 0.1 1 10 100 1000 2 3 4 5 6 7 8 9 10 v gs (volts) figure 3: transfer characteristics i d (a) -55c v ds =20v 25c 125c 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 15 30 45 60 75 90 i d (a) figure 4: on-resistance vs. drain current and gate voltage r ds(on) ( w w w w ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 5: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =21a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 6: break down vs. junction temperature bv dss (normalized) 0 10 20 30 40 50 60 0 5 10 15 20 v ds (volts) figure 2: on-region characteristics@125c i d (a) v gs =4.5v 5v 10v 6v 5v 5.5v 5.5v 7v www.freescale.net.cn 3/7 aot42s60/AOTF42S60 600v 39a a aa a mos tm power transistor
typical electrical and thermal characteristics 0 3 6 9 12 15 0 15 30 45 60 q g (nc) figure 8: gate-charge characteristics v gs (volts) v ds =480v i d =21a 1 10 100 1000 10000 0 100 200 300 400 500 600 v ds (volts) figure 9: capacitance characteristics capacitance (pf) c iss c oss c rss 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 7: body-diode characteristics (note e) i s (a) 25c 125c 0 4 8 12 16 20 0 100 200 300 400 500 600 v ds (volts) figure 10: coss stored energy eoss(uj) e oss 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 12: maximum forward biased safe operating area for AOTF42S60(note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 1s 10s 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 11: maximum forward biased safe operating area for aot42s60(note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s www.freescale.net.cn 4/7 aot42s60/AOTF42S60 600v 39a a aa a mos tm power transistor
typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 t case (c) figure 15: current de-rating (note b) current rating i d (a) 0 300 600 900 1200 1500 25 50 75 100 125 150 175 t case (c) figure 14: avalanche energy e as (mj) 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds (volts) i d (amps) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 1s figure 13: maximum forward biased safe operating area for AOTF42S60l(note f) 10s www.freescale.net.cn 5/7 aot42s60/AOTF42S60 600v 39a a aa a mos tm power transistor
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 18: normalized maximum transient thermal imp edance for AOTF42S60l (note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3.3c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 15: normalized maximum transient thermal imp edance for AOTF42S60(note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 17: normalized maximum transient thermal imp edance for AOTF42S60(note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 16: normalized maximum transient thermal imp edance for AOTF42S60(note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.3c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t o n t p d t o n t p d t on t p d www.freescale.net.cn 6/7 aot42s60/AOTF42S60 600v 39a a aa a mos tm power transistor
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar www.freescale.net.cn 7/7 aot42s60/AOTF42S60 600v 39a a aa a mos tm power transistor
|
