4v drive pch mosfet RU1E002SP ? structure ? dimensions (unit : mm) silicon p-channel mosfet ? features 1) high-speed switching. 2) small package (umt3f). 3) 4v drive. ? application switching ? packaging specifications ? inner circuit package taping code tcl basic ordering unit (pieces) 3000 RU1E002SP ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss ? 30 v gate-source voltage v gss ? 20 v continuous i d ? 0.25 a pulsed i dp ? 0.5 a power dissipation p d 0.2 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 p w ? 10 ? s, duty cycle ? 1% *2 each terminal mounted on a reference land. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 625 ? c / w *each terminal mounted on a reference land. parameter type drain current parameter umt3f 2.0 0.32 0.65 0.65 1.3 2.1 1.25 0.425 0.425 (1) (2) (3) 0.9 0.53 0.53 0.13 *2 *1 * abbreviated symbol : wp (1) gate (2) source (3) drain ?2 ?1 (3) (1) (2) ? 1 body diode ? 2 esd protection diode 1/5 2011.08 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RU1E002SP ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss ? 30 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 1 ? av ds = ? 30v, v gs =0v gate threshold voltage v gs (th) ? 1- ? 2.5 v v ds = ? 10v, i d = ? 1ma - 0.9 1.4 i d = ? 0.25a, v gs = ? 10v - 1.4 2.1 i d = ? 0.15a, v gs = ? 4.5v - 1.6 2.4 i d = ? 0.15a, v gs = ? 4v forward transfer admittance l y fs l 0.2 - - s v ds = ? 10v, i d = ? 0.15a input capacitance c iss - 30 - pf v ds = ? 10v output capacitance c oss - 10 - pf v gs =0v reverse transfer capacitance c rss - 5 - pf f=1mhz turn-on delay time t d(on) -4-nsv dd ? 15v, i d = ? 0.15a rise time t r -6-nsv gs = ? 10v turn-off delay time t d(off) - 20 - ns r l =100 ? fall time t f - 23 - ns r g =10 ? *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 0.1a, v gs =0v *pulsed conditions conditions ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * * * 2/5 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RU1E002SP ? electrical characteristic curves (ta=25 ? c) 0 0.05 0.1 0.15 0.2 0.25 0 0.2 0.4 0.6 0.8 1 drain current : - i d [a] drain - source voltage : - v ds [v] fig.1 typical output characteristics ( ) v gs = - 2.5v v gs = - 10.0v v gs = - 4.0v v gs = - 4.5v t a =25 c pulsed 0 0.05 0.1 0.15 0.2 0.25 0 2 4 6 8 10 drain current : - i d [a] drain - source voltage : - v ds [v] fig.2 typical output characteristics ( ) v gs = - 2.5v v gs = - 2.0v t a =25 c pulsed v gs = - 10.0v v gs = - 4.0v v gs = - 4.5v 100 1000 10000 0.01 0.1 1 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.3 static drain - source on - state resistance vs. drain current t a =25 c pulsed v gs = - 4.0v v gs = - 4.5v v gs = - 10v 100 1000 10000 0.01 0.1 1 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs = - 10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 100 1000 10000 0.01 0.1 1 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs = - 4.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 100 1000 10000 0.01 0.1 1 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs = - 4v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 3/5 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RU1E002SP 0.01 0.1 1 0.001 0.01 0.1 1 forward transfer admittance y fs [s] drain current : - i d [a] fig.7 forward transfer admittance vs. drain current v ds = - 10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.001 0.01 0.1 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : - i d [a] gate - source voltage : - v gs [v] fig.8 typical transfer characteristics v ds = - 10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.01 0.1 1 0.0 0.5 1.0 1.5 2.0 source current : - i s [a] source - drain voltage : - v sd [v] fig.9 source current vs. source - drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 1000 2000 3000 4000 5000 0 2 4 6 8 10 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : - v gs [v] fig.10 static drain - source on - state resistance vs. gate - source voltage i d = - 0.25a i d = - 0.15a t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 switching time : t [ns] drain current : - i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P - 15v v gs = - 10v r g =10 t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 capacitance : c [pf] drain - source voltage : - v ds [v] fig.12 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 4/5 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RU1E002SP ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10 % 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) 5/5 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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