50v-1000v 1.0a surface mount high efficiency rectifiers e-mail: sales@taychipst.com web site: www.taychipst.com 1 of 2 uf1a thru uf1m features for surface mounted applications low profile package built-in strain relief easy pick and place ultrafast recovery times for high efficiency plastic package has underwriters laboratory flammability classification 94v-o glass passivated junction high temperature soldering o 260 c/10 seconds at terminals mechanical dat a case: jedec do-214acmolded plastic t erminals: solder plated, solderable per mil-std-750, method 2026 polarity: indicated by cathode band standard packaging: 12mm tape (eia-481) maximum ratings and electrical characteristics rating at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol uf1a uf1b uf1d UF1G uf1j uf1k uf1m units maximum recurrent peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified current .375 (9.5mm) lead length @t a = 55 o c i (av) 1.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 30 a maximum instantaneous forward voltage @ 1.0a v f 1.0 1.7 v maximum dc reverse current @ t a =25 o c at rated dc blocking voltage @ t a =125 o c i r 5.0 150 ua ua maximum reverse recovery time ( note 1 ) trr 50 75 ns typical junction capacitance ( note 2 ) cj 17 pf typical thermal resistance (note 3) r ja r jl 60 15 o c/w operating/storage temperature range t j, t stg -55 to + 150 o c notes: 1. reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a 2. measured at 1 mhz and applied reverse voltage of 4.0 v d.c. 3. thermal resistance from junction to ambient and from junction to lead length .375? (9.5mm), mounted on 0.2? x 0.2? (5mm x 5mm) cu pads.
surface mount high efficiency rectifiers e-mail: sales@taychipst.com web site: www.taychipst.com 50v-1000v 1.0a 2 of 2 uf1a thru uf1m fig . 1 - r ev er se re co ve ry ti me ch ar ac te ris tic an d t es t c irc uit di ag ra m 50 non ind uct ive 1 no n- ind uct ive not es :1. ris e t ime =7 ns m ax. in put im ped anc e= 1 m ego hm . 22 pf 2. r ise tim e= 10n s m ax. s our ce i mp eda nce =5 0 o hm s. 10 non ind uct ive d.u .t. os cil los co pe not e 1 pul se gen era tor not e 2 25 vdc (ap pro x) (+) (+) () () set time base for 10ns/cm 1cm -1.0 -0.25 0 +0.5a t rr fig. 2 - f or wa rd ch ar ac te ris tic s fig. 4 - f or wa rd cu rr en t d er atin g c ur ve 2.0 1.0 25 50 7 5 1 00 1 25 15 0 175 o lea d t em per atu re , c a v e r a g e f o r w a r d c u r r e n t , a m p e r e s sing le ph ase half w ave 60h z resi stive or indu ctiv e lo ad p.c.b m ount ed on 0 .315x 0.315 "(8.0x 8.0m m) copp er pa d are as 0 .2 .4 .6 .8 1.0 1.2 1.4 10 1.0 0.1 .01 0 t =2 5 c j ty pic al us1a us1g us1k i a p k f m , 30 25 20 15 10 5 8.3ms single half since-wave jedec method 1 2 5 10 20 50 100 fig. 5 - peak forward surge current number of cycles at 60hz p e a k f o r w a r d s u r g e c u r r e n t , a m p e r e s 100 10 1 0.1 1 10 100 fig. 3 - typical junction capa citance reverse volt age, volts 0 t j =2 5 c f= 1.0 mh z vs ig= 50 mv p-p j u n c t i o n c a p a c i t a n c e , p f
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