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| symbol max p-channel units v ds v v gs v i dm t j ,t stg c symbol typ max 40 50 67 80 r q jl 33 40 symbol typ max 38 50 66 80 r q jl 30 40 maximumjunctiontolead c steadystate c/w parameter units maximumjunctiontoambient a t10s r q ja maximumjunctiontoambient a steadystate maximumjunctiontoambient a steadystate c/w maximumjunctiontolead c steadystate c/w thermal characteristics: p-channel c/w c/w units c/w junctionandstoragetemperaturerange 55to150 55to150 thermal characteristics: n-channelparameter maximumjunctiontoambient a t10s r q ja t a =70c powerdissipation t a =25c p d 30 30 20 drainsourcevoltage absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel w 7.5 6 30 2.51.6 5.3 6.6 2.51.6 30 20 gatesourcevoltage a continuousdraincurrent a t a =25c i d t a =70c pulseddraincurrent b aop605complementary enhancement mode field effect transistor features n-channel p-channelv ds (v)=30v30v i d =7.5a (v gs =10v) 6.6a (v gs =10v) r ds(on) <28m w (v gs =10v) <35m w (v gs =10v) <43m w (v gs =4.5v) <58m w (v gs =4.5v) general description theaop605/lusesadvancedtrenchtechnologytoprovideexcellentr ds(on) andlowgatecharge.the complementarymosfetsformahighspeedpowerinverter,suitableforamultitudeofapplications. aop605andaop605lareelectricallyidentical. rohscompliant aop605lishalogenfree g1 s1 g2 s2 d1 d1 d2 d2 12 3 4 87 6 5 pdip-8 g2 d2s2 g1 d1s1 n-channel p-channel pdip8top view bottom view alpha & omega semiconductor, ltd.
aop605 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 30 a 22.6 28 t j =125c 33 43 m g fs 12 16 s v sd 0.76 1 v i s 4 a c iss 680 820 pf c oss 102 pf c rss 77 pf r g 1.2 2 q g (10v) 13.84 16.6 nc q g 6.74 8.1 nc q gs 1.82 nc q gd 3.2 nc t d(on) 4.6 ns t r 4.1 ns t d(off) 20.6 ns t f 5.2 ns t rr 16.5 20 ns q rr 7.8 nc thisproducthasbeendesignedandqualifiedfortheconsumermarket.applicationsorusesascritical componentsinlifesupportdevicesorsystemsarenotauthorized.aosdoesnotassumeanyliabilityarising outofsuchapplicationsorusesofitsproducts.aosreservestherighttoimproveproductdesign, functionsandreliabilitywithoutnotice. bodydiodereverserecoverycharge bodydiodereverserecoverytime totalgatecharge v gs =4.5v,v ds =15v,i d =7.5a i f =7.5a,di/dt=100a/ s i f =7.5a,di/dt=100a/ s turnoffdelaytime turnofffalltime turnondelaytime v gs =10v,v ds =15v,r l =2.0 , r gen =6 gateresistance v gs =0v,v ds =0v,f=1mhz bodydiodeforwardvoltage i s =1a,v gs =0v v gs =0v,v ds =15v,f=1mhz reversetransfercapacitance inputcapacitance outputcapacitance. switching parameters totalgatecharge gatesourcecharge gatedraincharge turnonrisetime maximumbodydiodecontinuouscurrent dynamic parameters m v gs =4.5v,i d =6.0a r ds(on) staticdrainsourceonresistance v gs =10v,i d =7.5a forwardtransconductance v ds =5v,i d =7.5a gatethresholdvoltage v ds =v gs i d =250 a onstatedraincurrent v gs =10v,v ds =5v a gatebodyleakagecurrent v ds =0v,v gs =20v n-channel mosfet electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drainsourcebreakdownvoltage i d =250 a,v gs =0v i dss zerogatevoltagedraincurrent v ds =24v,v gs =0v a:thevalueofr ja ismeasuredwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.thevalue inany givenapplicationdependsontheuser'sspecificboarddesign.thecurrentratingisbasedonthet 10sthermalresistancerating. b:repetitiverating,pulsewidthlimitedbyjunctiontemperature. c.ther ja isthesumofthethermalimpedencefromjunctiontoleadr jl andleadtoambient. d.thestaticcharacteristicsinfigures1to6areobtainedusing80 spulses,dutycycle0.5%max. e.thesetestsareperformedwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.thesoa curveprovidesasinglepulserating. rev4:jan2009 alphaomegasemiconductor,ltd. !1 1 1 1 2 " 1 3 (3 0 &4 52 " %4 $'#%'# (0 3 (3 0 &4-'% +2 '6%' $'#%'# (0 ( 0 &4-'% 72 " %#% 89 ' -''% / % 3 4% (0 ( w ww w 0 .> .> .> .> .> .j .j 3 (3 0 &4-'% 2 : / / /% #$'#%'# i % %'-'% ( ,0 &4-'% ;2 " %#% 89 )-# % %'-'% ' <%/ " %#% 3 (3 0 &4-'% 2 " %#% 89 %" -'#% 3 4% (0 ( w ww w 0 ;#:+ 7 :+7 !9$(=9$%4+/( !1 1 1 1 2 " 1 = 4 (0 &4-'% >2 %"$'4% #$'#%'# 3 (3 0 i 3 (3 0 &4-'% ?2 ##% $'#%'# ##% (&0 !"" - % /$ (0 &4-'% 52 4 % - % .%' 4 )-# " " % ( % 0 .%' - % /$ (0 &4-'% 552 ' <%/ - '% $%' %/#% @ q qq q ) ' <%/ '% $%' %#% $"" %"" 3 (3 0 ( 0 &4-'% a2 - & '.'/ :%/ 6% %'4 '% ( % 0 m " " " " " " & ;! !7( 0:a ! ;7+,=;"7 $ < 4,1 j, 0 3 q & q & q <5 $ , +(7"97(! +$%(7% 4+4+4+ 4+4+4+"! ;7+#=;"7 0:a ) 0*? m " ;#:+ 7 :+7 !9$(=9$%4+/( > j (" - > j " " ' ' " ' ( :% 7 :7+ :% 7+7"+ !%9=!+k+5 :87)$% " > j - / " (" "( "( !$(7+& 79$87%6+ 7 "+ !%9=!+k +5 :87 )$% " ( "+> ("+j (<( & 0 %% (( (( ' +++ +>+++( %% > j - ( ( " ( " " & / & " ( " h i h & 7 " !" !8 7 + @ !9 ! + 7 " + !%9 = !+k +5 : 8 7 )$ % " % ($ $ ($)) ) $)) ;#:+ 7 :+7 !9$(=9$%4+/( aop605 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1.2 2 2.4 v i d(on) 30 a 28 35 t j =125c 37 45 44 58 m g fs 13 s v sd 0.76 1 v i s 4.2 a c iss 920 1100 pf c oss 190 pf c rss 122 pf r g 3.6 4.4 q g (10v) 18.5 22.2 nc q g (4.5v) 9.6 11.6 nc q gs 2.7 nc q gd 4.5 nc t d(on) 7.7 ns t r 5.7 ns t d(off) 20.2 ns t f 9.5 ns t rr 20 24 ns q rr 8.8 nc thisproducthasbeendesignedandqualifiedfortheconsumermarket.applicationsorusesascritical componentsinlifesupportdevicesorsystemsarenotauthorized.aosdoesnotassumeanyliabilityarising outofsuchapplicationsorusesofitsproducts.aosreservestherighttoimproveproductdesign, functionsandreliabilitywithoutnotice. p-channel mosfet electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drainsourcebreakdownvoltage i d =250 a,v gs =0v i dss zerogatevoltagedraincurrent v ds =24v,v gs =0v a gatebodyleakagecurrent v ds =0v,v gs =20v m v gs =4.5v,i d =5a gatethresholdvoltage v ds =v gs i d =250 a onstatedraincurrent v gs =10v,v ds =5v v ds =5v,i d =6.6a r ds(on) staticdrainsourceonresistance forwardtransconductance v gs =10v,i d =6.6a diodeforwardvoltage i s =1a,v gs =0v maximumbodydiodecontinuouscurrent outputcapacitance reversetransfercapacitance gateresistance dynamic parameters inputcapacitance v gs =0v,v ds =15v,f=1mhz v gs =0v,v ds =0v,f=1mhz totalgatecharge(4.5v) gatesourcecharge gatedraincharge switching parameters totalgatecharge(10v) v gs =10v,v ds =15v,i d =6.6a turnondelaytime v gs =10v,v ds =15v,r l =2.3 , r gen =3 turnonrisetime turnoffdelaytime turnofffalltime bodydiodereverserecoverytime i f =6.6a,di/dt=100a/ s bodydiodereverserecoverycharge i f =6.6a,di/dt=100a/ s a:thevalueofr ja ismeasuredwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.the valueinanyagivenapplicationdependsontheuser'sspecificboarddesign.thecurrentratingisbasedonthet 10sthermalresistance rating. b:repetitiverating,pulsewidthlimitedbyjunctiontemperature. c.ther ja isthesumofthethermalimpedencefromjunctiontoleadr jl andleadtoambient. d.thestaticcharacteristicsinfigures1to6,12,14areobtainedusing80 spulses,dutycycle0.5%max. e.thesetestsareperformedwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.the soacurveprovidesasinglepulserating. a:thevalueofr ja ismeasuredwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.the valueinany givenapplicationdependsontheuser'sspecificboarddesign.thecurrentratingisbasedonthet 10sthermalresistance rating. b:repetitiverating,pulsewidthlimitedbyjunctiontemperature. c.ther ja isthesumofthethermalimpedencefromjunctiontoleadr jl andleadtoambient. d.thestaticcharacteristicsinfigures1to6,12,14areobtainedusing80 spulses,dutycycle0.5%max. e.thesetestsareperformedwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.the soacurveprovidesasinglepulserating. rev4:jan2009 alphaomegasemiconductor,ltd. 2, /+./. & /++*.&0/+ *& .& d+,> *./ "3 (3 0 &4 52 " %4 $'#%'# " (0 > > > > > "3 (3 0 &4-'% +2 '6%' $'#%'# " (0 " (0 &4-'% 72 " %#% 89 ' -''% / % 3 4% (0 ( w ww w 0 .> .> .> .> .> .> .j .j "3 (3 0 &4-'% 2 : /" /% $'#%'# " (0 % %'-'% (,0 &4-'% ;2 " %#% 89 )-# % %'-'% ' <%/ " %#% > > i "3 (3 0 &4-'% 2 " %#% 89 %" -'#% 3 4% (0 ( w ww w 0 > > > > > > > ;#:+ 7 :+7 !9$(=9$%4+/( !1 1 1 1 2 " 1 "= 4 (0 &4-'% >2 %"$'4% $'#%'# "3 (3 0 "3 (3 0 &4-'% ?2 ##% $'#%'# ##% (&0 !"" - % /$ (0 &4-'% 52 4 % - % .%' 4 )-# " " % ( % 0 .%' (0 - % /$ (0 &4-'% 552 ' <%/ - '% $%' %/#% @ q qq q ) ' <%/ '% $%' %#% $"" %"" "3 (3 0 " ( 0 &4-'% a2 - & '.'/ :%/ 6% %'4 '% ( % 0 m " " " " " " & ;! !7( 0:a 4+ > > ! ;7+,=;"7 $ < 4,1 j, 0 3 q & q & q <5 $ , +(7"97(! +$%(7% 4+4+4+ 4+4+4+"! ;7+#=;"7 0:a m " ;#:+ 7 :+7 !9$(=9$%4+/( (" - " " ' ' " ' ( :% 7 :7+ :% 7+7"+ !%9=!+k+5:87)$% > j > j > " > j - / " " ( !$ ( 7 +& 7 9 $ 8 7 %6 + 7 " + !%9 = !+k +5 : 8 7 )$ % " ( " +> ( " +j ( <( & 0 %% ( ( ( ( ' +++ +>+++( %% >" ( > ( " > > - (( " (" " & / & & 7 "!"!87+ @ !9 ! + 7 "+ !%9=!+k +5 : 87 )$ % " > j " (" ih h % $ ($ )) ) $ )) ($ ;#:+ 7 :+7 !9$(=9$%4+/( |
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