november 2011 doc id 15354 rev 4 1/12 12 2N3700HR hi-rel 80 v - 1 a npn bipolar transistor features hi-rel npn bipolar transistor linear gain characteristics escc qualified european preferred part list - eppl 100 krad low dose rate radiation level: lot specific total dose contact marketing for specified level description the 2N3700HR is a silicon planar epitaxial npn transistor in to-18 and lcc-3 packages. it is specifically designed for aerospace hi-rel applications and escc qualified according to the 5201-004 specification. in case of conflict between this datasheet and escc detailed specification, the latter prevails. figure 1. internal schematic diagram bv ceo 80 v i c (max) 1 a h fe at 10 v - 150 ma > 100 operating temperature range -65c to +200c to-18 lcc-3 3 1 2 lcc-3ub 3 1 2 4 3 1 2 table 1. device summary order codes escc part num. qual. level rad level packages lead finish mass (g) eppl 2n37000ub1 - eng. model lcc-3ub gold 0.06 - 2n37000ubsw 5201/004/07 escc flight 100 krad lcc-3ub solder dip 0.06 y 2n37000ub06 5201/004/06 escc flight lcc-3ub gold 0.06 - 2n37000ub07 5201/004/07 escc flight lcc-3ub solder dip 0.06 - soc37000 - eng. model lcc-3 gold 0.06 - soc3700sw 5201/004/05 escc flight 100 krad lcc-3 solder dip 0.06 y soc3700hrb 5201/004/04 or 05 es cc flight lcc-3 gold/solder dip (1) 0.06 y 2n3700t1 - eng. model to-18 gold 0.40 - 2N3700HR 5201/004/01 or 02 escc flight to-18 gold/solder dip (1) 0.40 - 1. depending escc part number mentioned on the purchase order www.st.com www.datasheet.net/ datasheet pdf - http://www..co.kr/
electrical ratings 2N3700HR 2/12 doc id 15354 rev 4 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 140 v v ceo collector-emitter voltage (i b = 0) 80 v v ebo emitter-base voltage (i c = 0) 7 v i c collector current 1 a p tot total dissipation at t amb 25 c for 2N3700HR for soc3700hrb for soc3700hrb (1) total dissipation at t c 25 c for 2N3700HR 1. when mounted on a 15 x 15 x 0.6 mm ceramic substrate. 0.5 0.5 0.76 1.8 w w w w t stg storage temperature -65 to 200 c t j max. operating junction temperature 200 c table 3. thermal data for through-hole package symbol parameter to-18 unit r thjc r thja thermal resistance junction-case __ max thermal resistance junction-ambient __ max 97 350 c/w c/w table 4. thermal data for smd package symbol parameter soc unit r thja r thja thermal resistance junction-ambient max thermal resistance junction-ambient (1) max 1. when mounted on a 15 x 15 x 0.6 mm ceramic substrate. 350 230 c/w c/w www.datasheet.net/ datasheet pdf - http://www..co.kr/
2N3700HR electrical characteristics doc id 15354 rev 4 3/12 2 electrical characteristics t case = 25 c unless otherwise specified. table 5. electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 90 v v cb = 90 v t amb = 110 c v cb = 90 v t amb = 150 c 10 100 10 na na a i ebo emitter cut-off current (i c = 0) v eb = 5 v 10 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = 100 a 140 v v (br)ceo (1) 1. pulsed duration = 300 s, duty cycle 2 % collector-emitter breakdown voltage (i b = 0) i c = 30 ma 80 v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 100 a 7 v v ce(sat) (1) collector-emitter saturation voltage i c = 150 ma i b = 15 ma i c = 500 ma i b = 50 ma 0.2 0.5 v v v be(sat) (1) base-emitter saturation voltage i c = 150 ma i b = 15 ma i c = 150 ma i b = 15 ma t amb = 110 c 0.75 0.65 0.87 0.77 1 0.9 v v h fe (1) dc current gain i c = 10 ma v ce = 10 v i c = 150 ma v ce = 10 v i c = 500 ma v ce = 10 v i c = 150 ma v ce = 10 v t amb = - 55 c 90 100 50 40 300 h fe small signal current gain v ce = 10 v i c = 50 ma f = 20 mhz 5 c cbo output capacitance (i e = 0) v cb = 10 v f = 1 mhz 12 pf c ibo input capacitance (i c = 0) v eb = 0.5 v f = 1 mhz 60 pf www.datasheet.net/ datasheet pdf - http://www..co.kr/
electrical characteristics 2N3700HR 4/12 doc id 15354 rev 4 2.1 electrical characteristics (curves) figure 2. dc current gain (v ce =1 v) figure 3. dc current gain (v ce =10 v) figure 4. collector emitter saturation voltage figure 5. base emitter saturation voltage ! - v , f $ (
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