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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD1187 description collector-emitter breakdown voltage- : v (br)ceo = 80v(min) low collector saturation voltage- : v ce(sat) = 0.5v(max.) @ i c = 6a high power dissipation applications high power switching applications dc-dc converter and dc-ac inverter applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 5 v i c collector current-continuous 10 a i b b base current-continuous 2 a p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1187 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma ; i b = 0 80 v v ce (sat) collector-emitter saturation voltage i c = 6a; i b = 0.3a b 0.5 v v be (sat) base-emitter saturation voltage i c = 6a; i b = 0.3a b 1.4 v i cbo collector cutoff current v cb = 100v; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe-1 dc current gain i c = 1a; v ce = 1v 70 240 h fe-2 dc current gain i c = 6a; v ce = 1v 30 c ob output capacitance i e = 0; v cb = 10v; f test = 1.0mhz 350 pf f t current-gain?bandwidth product i c = 1a; v ce = 4v 10 mhz switching times t on turn-on time 0.5 s t stg storage time 2.5 s t f fall time i b1 = -i b2 = 0.3a; r l = 5 ; v cc = 30v; p w =20 s; duty cycle 1% 0.8 s ? h fe- 1 classifications o y 70-140 120-240 isc website www.iscsemi.cn 2 |
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