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  mitsubishi electric M5M5V408BFP,tp,rt,kv revision-k 2 .0 e , ' 99.03.10 4194304-bit (524288-word by 8-bit) cmos static ram mitsubishi lsis m5m5v408b## -70lw m5m5v408b## -85lw m5m5v408b## -70hw m5m5v408b## -85hw m5m5v408b## -70l m5m5v408b## -85l m5m5v408b## -70h m5m5v408b## -85h m5m5v408b## -70li m5m5v408b## -85li m5m5v408b## -70hi m5m5v408b## -85hi standard 0 ~ +70? w- version -20 ~ +85? i- version -40 ~ +85? version, part name (## stands for "fp","tp", "rt","kv"or"kr") power supply access time max. 25? stand-by current icc (pd) , vcc=3.0v 70ns 2.7 ~ 3.6v 2.7 ~ 3.6v 2.7 ~ 3.6v 2.7 ~ 3.6v 2.7 ~ 3.6v 2.7 ~ 3.6v --- --- --- 0.3? 0.3? 0.3? --- 1? 1? 3? 1? 3? typical * --- --- --- 40? 1? 1? 1? --- --- 30? 15? 30? 15? 60? 30? 30? 15? 60? 30? 70? 85?25? 40? --- --- --- --- --- 3? 85ns 70ns 85ns 70ns 85ns 70ns 85ns 70ns 85ns 70ns 85ns description ?single +2.7~+3.6v power supply ?small stand-by current: 0.3?(3v,typ.) ?no clocks, no refresh ?data retention supply voltage=2.0v to 3.6v ?all inputs and outputs are ttl compatible. ?easy memory expansion by s ?common data i/o ?three-state outputs: or-tie capability ?oe prevents data contention in the i/o bus ?process technology: 0.25? cmos ?package: M5M5V408BFP: 32 pin 525 mil sop m5m5v408btp/rt: 32 pin 400mil tsop(ll) m5m5v408bkv/kr: 32 pin 8mm x13.4mm stsop features active current 30ma (10mhz) 5ma (1mhz) ratings (max.) 1 operating temperature the m5m5v408b is a family of low voltage 4-mbit static rams organized as 524,288-words by 8-bit, fabricated by mitsubishi's high- performance 0.25? cmos technology. the m5m5v408b is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives. m5m5v408b is packaged in 32-pin plastic sop, 32-pin plastic tsop and 32-pin 8mm x 13.4mm stsop packages. two types of tsops and two types of stsops are available, m5m5v408btp (normal-lead-bend tsop), m5m5v408brt (reverse-lead-bend tsop), m5m5v408bkv (normal-lead-bend stsop) and m5m5v408bkr (reverse-lead-bend stsop). these two types tsops and two types stsops are suitable for a surface mounting on double-sided printed circuit boards. from the point of operating temperature, the family is divided into three versions; "standard", " w -version", and " i -version". those are summarized in the part name table below. part name table (3.0v, typ.) icc1 * "typical" parameter is sampled, not 100% tested.
mitsubishi electric M5M5V408BFP,tp,rt,kv revision-k 2 .0 e , ' 99.03.10 4194304-bit (524288-word by 8-bit) cmos static ram mitsubishi lsis a 4 a 5 a 6 a 7 a 14 a 16 a 17 vcc a 15 a 18 w a 13 a 8 a 9 a 11 a 12 gnd a 2 a 0 dq1 dq2 dq3 dq5 dq6 dq7 dq8 s a 10 oe a 1 a 3 dq4 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 outline 32p3k-c a 11 a 9 a 8 a 13 a 18 a 15 vcc a 17 a 16 a 14 a 12 a 7 a 6 a 5 a 4 w oe a 10 s dq8 dq7 dq6 dq5 dq4 gnd dq3 dq2 dq1 a 0 a 1 a 2 a 3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 outline 32p3k-b 2 pin configuration (top view) outline 32p3y-j (rt) outline 32p2m-a (fp) 32p3y-h (tp) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 a 9 oe s a 13 a 8 a 15 dq 6 dq 5 dq 4 dq 8 dq 7 a 11 w v cc a 10 gnd dq 3 dq 2 dq 1 a 12 a 14 a 16 a 18 a 6 a 2 a 3 a 5 a 1 a 0 a 7 a 4 a 17
mitsubishi electric M5M5V408BFP,tp,rt,kv revision-k 2 .0 e , ' 99.03.10 4194304-bit (524288-word by 8-bit) cmos static ram mitsubishi lsis function table block diagram 3 mode dq icc s w oe write read h l l l l x l h h h x x non selection high-impedance high-impedance active standby read a 4 a 5 a 6 a 7 a 12 a 14 a 16 a 17 a 18 a 11 a 9 a 8 12 a 0 11 a 1 10 a 2 9 a 3 a 13 25 26 27 28 8 7 6 5 4 3 2 30 1 a 15 31 a 10 23 dq 1 dq 2 dq 3 dq 4 v cc (3v) gnd (0v) w oe dq 5 dq 6 dq 7 dq 8 s 24 13 14 15 17 32 22 18 19 20 21 29 16 a0 ~ a18 dq1 ~ dq8 s w oe vcc gnd address input data input / output chip select input write control input output inable input power supply ground supply pin function data input (d) active active memory array 524288 words x 8 bits clock generator function the m5m5408bfp,tp,rt,kv,kr is organized as 524,288- words by 8-bit. these devices operate on a single +2.7~3.6v power supply, and are directly ttl compatible to both input and output. its fully static circuit needs no clocks and no refresh, and makes it useful. a write operation is executed during the s low and w low overlap time. the address(a0~a18) must be set up before the write cycle a read operation is executed by setting w at a high level and oe at a low level while s are in an active state(s=l). when setting s at a high level, the chips are in a non- selectable mode in which both reading and writing are disabled. in this mode, the output stage is in a high-impedance state, allowing or-tie with other chips. setting the oe at a high level,the output stage is in a high-impedance state, and the data bus contention problem in the write cycle is eliminated. the power supply current is reduced as low as 0.3?(25?, typical), and the memory data can be held at +2v power supply, enabling battery back-up operation during power failure or power-down operation in the non-selected mode. data output (q) 20 19 18 17 1 2 3 4 16 15 14 13 12 11 10 9 6 7 31 32 21 22 23 25 8 30 26 27 28 29 5 24 m5m5v408bkv/kr m5m5v408b fp/tp/rt m5m5v408bkv/kr m5m5v408b fp/tp/rt
mitsubishi electric M5M5V408BFP,tp,rt,kv revision-k 2 .0 e , ' 99.03.10 4194304-bit (524288-word by 8-bit) cmos static ram mitsubishi lsis 4 absolute maximum ratings pf 8 10 v i =gnd, v i =25mvrms, f=1mhz v o = gnd,v o =25mvrms, f=1mhz c i c o symbol parameter limits conditions units ? ma ? ma v icc 1 icc 2 icc 4 v ih v il i o icc 3 v oh1 i oh = -0.5ma v oh2 i oh = -0.05ma v ol i ol =2ma i i v i =0 ~ vcc s=v ih or oe=v ih, v i/o =0 ~ vcc vcc+0.3v 0.6 2.2 -0.3 * 2.4 0.5 0.4 ? 4030 20 vcc-0.5v ? 7 -hw, -hi max typ min dc electrical characteristics +70? +70? +40? 2 0.3 f= 10mhz f= 1mhz - - - - - - - - - - supply voltage input voltage output voltage power dissipation operating temperature storage temperature v mw ? ? conditions ta=25? 700 -20 ~ +85 -65 ~150 ratings v cc v i v o p d t a t stg -0.5 * ~ +4.6 -0.5 * ~ vcc + 0.5 0 ~ vcc symbol parameter units -40 ~ +85 0 ~ +70 standard w- version i- version with respect to gnd f= 10mhz f= 1mhz 5 4030 75 +85? +85? -20 ~ +25? -40 ~ +25? -l, -lw, -li -h, -hw, -hi 0 ~ +25? -h -hw -hi - -lw, -li - - 0.3 0.3 1 2 2 5 - - - - 40 40 80 - (-l, -h) (-lw, -hw) (-li, -hi) with respect to gnd with respect to gnd ( vcc=2.7 ~ 3.6v, unless otherwise noted) high-level input voltage low-level input voltage high-level output voltage 1 high-level output voltage 2 low-level output voltage input leakage current output leakage current active supply current ( ac, cmos-level ) ( ac,ttl-level ) active supply current stand by supply current (cmos-level input) (ttl-level input) stand by supply current s 0.2v other inputs 0.2v or 3 vcc-0.2v output-open s=vil other inputs=v ih or v il output-open s=v ih ,other inputs= 0 ~ vcc s 3 vcc-0.2v other inputs=0~vcc * -3.0v in case of ac (pulse width 30ns) note 1: direction for current flowing into ic is indicated as positive (no mark) note 2: typical value is for vcc=3.0v capacitance (vcc=2.7 ~ 3.6v, unless otherwise noted) symbol parameter conditions limits max typ min units input capacitance output capacitance * -3.0v in case of ac (pulse width 30ns) vcc=3.6v, max.
mitsubishi electric M5M5V408BFP,tp,rt,kv revision-k 2 .0 e , ' 99.03.10 4194304-bit (524288-word by 8-bit) cmos static ram mitsubishi lsis output disable time after oe high output enable time after s low output enable time after oe low output disable time after s high 5 t cr ns t a (s) t a (oe) t dis (s) t dis (oe) t en (s) t en (oe) t v (a) t a (a) 30 30 85 60 0 70 70 35 0 0 5 5 1ttl cl dq 70 10 5 10 70 70 35 25 25 25 70 55 0 65 65 35 0 0 5 5 t cw t w (w) t su (a) t su (a-wh) t su (s) t su (d) t h (d) t rec (w) t dis (w) t dis (oe) t en (w) t en (oe) 85 10 5 10 85 85 45 30 30 25 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns input rise time and fall time reference level output loads 2.7v~3.6v v ih =2.4v,v il =0.4v v oh =v ol =1.5v transition is measured ?00mv from steady state voltage.(for t en ,t dis ) 5ns fig.1,cl=30pf cl=5pf (for ten,tdis) ac electrical characteristics (vcc=2.7 ~ 3.6v, unless otherwise noted) (1) test conditions (2) read cycle symbol parameter limits units max min max min read cycle time address access time chip select access time output enable access time data valid time after address (3) write cycle symbol parameter limits max min maxmin units write cycle time write pulse width address set up time address set up time with respect to w high chip select set up time data set up time data hold time write recovery time output disable time after w low output disable time after oe high output enable time after w high output enable time after oe low supply voltage input pulse fig.1 output load including scope and jig capacitance m5m5v408b fp,tp,rt,kv,kr-70 m5m5v408b fp,tp,rt,kv,kr-85 m5m5v408b fp,tp,rt,kv,kr-70 m5m5v408b fp,tp,rt,kv,kr-85
mitsubishi electric M5M5V408BFP,tp,rt,kv revision-k 2 .0 e , ' 99.03.10 4194304-bit (524288-word by 8-bit) cmos static ram mitsubishi lsis t en (w) 6 t a (a) t a (s) t v (a) t dis (s) t a (oe) t en (oe) t dis (oe) t cr t h (d) t su (d) dq 1~8 t su (s) t su (a-wh) t en (oe) t dis (oe) t w (w) t rec (w) t su (a) t dis (w) t cw t en (s) w = "h" level a 0~18 dq 1~8 a 0~18 oe oe s w s (4)timing diagrams read cycle (note3) (note3) (note3) (note3) valid data write cycle ( w control mode ) data in stable (note3) (note3)
mitsubishi electric M5M5V408BFP,tp,rt,kv revision-k 2 .0 e , ' 99.03.10 4194304-bit (524288-word by 8-bit) cmos static ram mitsubishi lsis 7 note 3: hatching indicates the state is "don't care". note 4: a write occurs during the overlap of a low s and a low w. note 5: if w goes low simultaneously with or prior to s,the output remains in the high impedance state. note 6: don't apply inverted phase signal externally when dq pin is in output mode. t h (d) t su (d) dq 1~8 t su (s) t rec (w) t su (a) t cw a 0~18 w s write cycle (s control mode) data in stable (note3) (note3) (note4) (note5)
mitsubishi electric M5M5V408BFP,tp,rt,kv revision-k 2 .0 e , ' 99.03.10 4194304-bit (524288-word by 8-bit) cmos static ram mitsubishi lsis 8 t su (pd) t rec (pd) ns0 5 ms 2.2v t su (pd) 2.7v2.7v 2.2v t rec (pd) s 3 vcc - 0.2v vcc v v 2.0 vcc (pd) v i (s) icc (pd) 2.0 s -hw, -hi +70? +70? +40? +85? +85? -l, -lw, -li -h, -hw, -hi 0 ~ +25? -lw, -li -20 ~ +25? -40 ~ +25? -h -hw -hi 15 1 0.3 0.3 0.3 1 1 1 3 - - - - 30 30 60 - - - - - - - - ? ? ? ? ? ? ? ? power down characteristics (1) electrical characteristics symbol parameter test conditions limits min typ max units power down supply voltage chip select input s power down supply current vcc=3.0v , s 3 vcc-0.2v, other inputs = 0 ~ vcc (2) timing requiremints symbol parameter test conditions limits min typ max units power down set up time power down recovery time (3) timing diagram s control mode typical value is based on sampling.
mitsubishi electric M5M5V408BFP,tp,rt,kv revision-k 2 .0 e , ' 99.03.10 4194304-bit (524288-word by 8-bit) cmos static ram mitsubishi lsis 9 revision history revision no. history date remarks k0.1e the first edition '98.3.05 preliminary k0.2e added M5M5V408BFP/tp/rt '98.7.30 preliminary k1.0e the first product version '98.9.7 --- k2.0e 1) speed items revised: 70ns added and 100ns deleted 2) icc3 and icc(pd) limits revised '99.3.10 ---
keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electric corporation or a third party. mitsubishi electric corporation assumes no responsibili ty for any damage, or infringement of any third- party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http://www.mitsubishichips.com). when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mi tsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in whole or in part these materials. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein. mitsubishi electric
sop32-p-525-1.27 weight(g) jedec code 1.29 eiaj package code lead material alloy 42 32p2m-a plastic 32pin 525mil sop symbol min nom max a a 2 b c d e l l 1 y dimension in millimeters h e a 1 i 2 .35 0 0 .13 0 .55 20 .3 11 .8 13 .6 0 .27 1 .1 0 .75 2 .4 0 .15 0 .75 20 .4 11 .27 1 .1 14 .8 0 .35 1 .34 13 .2 0 .05 3 .5 0 .2 0 .95 20 .5 11 .4 14 .0 1 .15 0 b 2 ?76 0 0 ? e e 1 32 17 16 1 h e e d b e y f a a 2 a 1 l 1 l c e b 2 e 1 i 2 recommended mount pad detail f mar.?8
tsop 32-p-400-1.27 weight(g) 0.53 jedec code eiaj package code lead material alloy 42 32p3y-h symbol min nom max a a 2 b c d e h e l l 1 y b 2 dimension in millimeters a 1 0.2 0.125 0.76 i 2 0.9 m e 10.36 10 0 0.1 0.8 0.6 0.5 0.4 11.96 11.76 11.56 1.27 10.26 10.16 10.06 21.05 20.95 20.85 0.175 0.125 0.105 0.5 0.4 0.35 1.0 0.05 1.2 e ii plastic 32pin 400mil tsop ( ) detail f recommended mount pad h e e e e y a 2 a 1 l 1 a f m e i 2 b 2 b d l 1 16 17 32 c mar.?8
tsop 32-p-400-1.27 weight(g) 0.53 jedec code eiaj package code lead material alloy 42 32p3y-j plastic 32pin 400mil tsop ( ) symbol min nom max a a 2 b c d e h e l l 1 y b 2 dimension in millimeters a 1 0.2 0.125 0.76 i 2 0.9 m e 10.36 10 0 0.1 0.8 0.6 0.5 0.4 11.96 11.76 11.56 1.27 10.26 10.16 10.06 21.05 20.95 20.85 0.175 0.125 0.105 0.5 0.4 0.35 1.0 0.05 1.2 e ii detail f recommended mount pad h e e e e y a 2 a 1 l 1 a f m e i 2 b 2 b d l 1 16 17 32 c mar.?8
weight(g) jedec code eiaj package code lead material alloy 42 32p3k-b plastic 32pin 8 5 13.4mm tsop ( ) symbol min nom max a a 2 b c d e l l 1 y dimension in millimeters h d a 1 m d .15 0 .05 0 .13 0 .7 11 .9 7 .2 13 .4 0 .9 0 .125 0 .0 1 .2 0 .15 0 .8 11 .0 8 .5 0 .4 13 .5 0 .8 0 .2 0 .2 1 .3 0 .2 0 .9 11 .1 8 .6 13 .6 0 .1 0 b 2 i 2 .225 0 .0 12 0 ?0 e recommended mount pad f a d h d e 1 16 17 32 l a 2 c l 1 a 1 l 2 b 2 m d e b e detail f y mar.?8
weight(g) jedec code eiaj package code lead material alloy 42 32p3k-c plastic 32pin 8 5 13.4mm tsop ( ) symbol min nom max a a 2 b c d e l l 1 y dimension in millimeters h d a 1 m d .15 0 .05 0 .13 0 .7 11 .9 7 .2 13 .4 0 .9 0 .125 0 .0 1 .2 0 .15 0 .8 11 .0 8 .5 0 .4 13 .5 0 .8 0 .2 0 .2 1 .3 0 .2 0 .9 11 .1 8 .6 13 .6 0 .1 0 b 2 i 2 .225 0 .0 12 0 ?0 e recommended mount pad f a d h d e 1 16 17 32 l a 2 c l 1 a 1 l 2 b 2 m d e b e detail f y mar.?8


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