SSM0410 3.5 a, 100v, r ds(on) 220m ? n-channel enhancement mode power mosfet elektronische bauelemente 11-may-2010 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the SSM0410 provide the designer with best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. the sot-223 package is universally prefe rred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. features ? fast switching ? low on-resistance ? logic level compatible marking maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit drain ? source voltage v ds 100 v gate ? source voltage v gs 20 v continuous drain current 3 , v gs @5v t a = 25c i d 3.5 a t a = 70c 2.2 a pulsed drain current 1,2 i dm 14 a total power dissipation p d 2.7 w linear derating factor 0.02 w/c operating junction & storage temperature range t j , t stg -65~150 c thermal data maximum junction?ambient 3 r ja 45 c/w sot-223 ref. millimete r ref. millimete r min. max. min. max. a 6.20 6.70 g - 0.10 b 6.70 7.30 h - - c 3.30 3.70 j 0.25 0.35 d 1.42 1.90 k - - e 4.50 4.70 l 2.30 ref. f 0.60 0.82 m 2.90 3.10 top view 1 2 3 4 a m b d l k f g h j e c gate source drain
SSM0410 3.5 a, 100v, r ds(on) 220m ? n-channel enhancement mode power mosfet elektronische bauelemente 11-may-2010 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min typ max unit test condition drain-source breakdown voltage bv dss 100 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 1.0 - 2.5 v v ds = 10v , i d =1ma forward transconductance g fs - 4.0 - s v ds =10v, i d =2.5a gate-source leakage current i gss - - 100 na v gs =20v drain-source leakage current i dss - - 10 a v ds =100v, v gs =0v drain-source on resistance r ds(on) - - 0.22 ? v gs =10v, i d =2.6a - - 0.28 v gs =5.0v, i d =1.7a total gate charge 2 q g - 11.2 - nc v gs =5v v ds =80v i d =3.5a gate-source charge q gs - 4.4 - gate-drain (?miller?) charge q gd - 3.0 - turn-on delay time 2 t d(on) - 9 - ns v dd =30v v gs =10v i d =1a r g =6 ? , r l =30 ? rise time t r - 9.4 - turn-off delay time t d(off) - 26.8 - fall time t f - 2.6 - input capacitance c iss - 975 - pf v ds =25v v gs =0v f=1mhz output capacitance c oss - 38 - reverse transfer capacitance c rss - 27 - source-drain diode forward on voltage 3 v sd - - 1.5 v v gs =0v, i s =3.5a note: 1. pulse width limited by maximum junction temperature. 2. pulse width Q 300 s, duty cycle Q 2% 3. surface mounted on 1 in 2 copper pad of fr4 board; 120c/w when mounted on min. copper pad.
SSM0410 3.5 a, 100v, r ds(on) 220m ? n-channel enhancement mode power mosfet elektronische bauelemente 11-may-2010 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
SSM0410 3.5 a, 100v, r ds(on) 220m ? n-channel enhancement mode power mosfet elektronische bauelemente 11-may-2010 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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