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| jmnic product specification silicon npn power transistors 2SC2344 description ? with to-220 package ? complement to type 2sa1011 applications ? high voltage switching ? audio frequency power amplifier; ? 100w output predriver applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 180 v v ceo collector-emitter voltage open base 160 v v ebo emitter-base voltage open collector 6 v i c collector current 1.5 a i cm collector current-peak 3.0 a p t total power dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220) and symbol
jmnic product specification 2 silicon npn power transistors 2SC2344 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo base-emitter breakdown voltage i c =10ma ,r be = ?t 160 v v (br)cbo collector-base breakdown voltage i c =1ma; i e =0 180 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 6 v v cesat collector-emitter saturation voltage i c =0.5a; i b =50ma 0.3 v v be base-emitter voltage i c =10ma ; v ce =5v 1.5 v i cbo collector cut-off current v cb =120v; i e =0 10 | a i ebo emitter cut-off current v eb =4v; i c =0 10 | a h fe dc current gain i c =0.3a ; v ce =5v 60 200 f t transition frequency i c =50ma ; v ce =10v 100 mhz c ob output capacitance f=1mhz ; v cb =10v 23 pf switching times resistive load t on turn-on time 0.15 | s t s storage time 0.81 | s t f fall time i c =0.5a i b1 =- i b2 =50ma 0.48 | s ? h fe classifications d e 60-120 100-200 jmnic product specification 3 silicon npn power transistors 2SC2344 package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm) jmnic product specification 4 silicon npn power transistors 2SC2344 jmnic product specification 5 silicon npn power transistors 2SC2344 |
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