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| savantic semiconductor product specification silicon npn power transistors BUW24 d escription with to-3 package high dielectric strength short switching time applications suitable for use in clocked voltatge converters pinning (see fig.2) pin description 1 base 2 emitter 3 collector maximun ratings symbol parameter conditions value unit v cbo collector-base voltage open emitter 450 v v ceo collector-emitter voltage open base 350 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i b base current 3 a p t total power dissipation t mb , 25 100 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 1.25 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUW24 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo collector-emitter breakdown voltage i c =10ma ; i b =0 350 v v cesat collector-emitter saturation voltage i c =4a; i b =0.8a 0.8 v v besat base-emitter saturation voltage i c =4a; i b =0.8a 1.5 v i cbo collector cut-off current v cb =450v; i e =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =5v 10 80 h fe-2 dc current gain i c =4a ; v ce =5v 15 switching times t on turn-on time 2.0 s t s storage time 4.0 s t f fall time i c =5a i b1 =- i b2 =0.5a r l =10 < 1.2 s savantic semiconductor product specification 3 silicon npn power transistors BUW24 package outline fig.2 outline dimensions |
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