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| Datasheet File OCR Text: |
| description AMS2304 is the n-channel logic enhancement mode power field effect transistor which is produced using high cell density, dmos trench te chnology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application suc h as cellular phone and notebook computer power management, other battery powered ci rcuits, and low in-line power loss are required. the product is in a very small o utline surface mount package. pin configuration sot-23-3l 1.gate 2.source 3.drain part marking sot-23-3l y: year code a: process code feature 30v/3.2a, r ds(on) = 50m-ohm (typ.) @vgs = 4.5v 20v/3.1a, r ds(on) = 65m-ohm @vgs = 2.5v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability sot-23-3l package design 3 1 2 d g s 3 1 2 04ya
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Price & Availability of AMS2304
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