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| description AMS2305 is the p-channel logic enhancement mode power field effec t transistor which is produced using high cell density, dmos trench te chnology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application suc h as cellular phone and notebook computer power management, other battery powered ci rcuits, and low in-line power loss are required. the product is in a very small o utline surface mount package. pin configuration sot-23 1.gate 2.source 3.drain part marking sot-23 y: year code a: process code feature -20v/-3.5a, r ds(on) = 63m-ohm (typ.) @vgs = -4.5v -20v/-3.0a, r ds(on) = 80m-ohm @vgs = -2.5v -20v/-2.0a, rds(on)= 100m-ohm @vgs=-1.8v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability sot-23 package design 3 1 2 d g s 3 1 2 05ya
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Price & Availability of AMS2305
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