1999. 11. 30 1/1 semiconductor technical data mpsa56 epitaxial planar pnp transistor revision no : 3 audio frequency amplifier applications. features complementary to mpsa06. maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-80v, i e =0 - - -100 na emitter cut-off current i ceo v ce =-60v, i b =0 - - -100 na collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -80 - - v dc current gain h fe (1) v ce =-1v, i c =-10ma 100 - - h fe (2) v ce =-1v, i c =-100ma 100 - - collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma - - -0.25 v base-emitter voltage v be v ce =-1v, i c =-100ma - - -1.2 v transition frequency f t v ce =-1v, i e =0, i c =-100ma 50 - - mhz characteristic symbol rating unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -80 v emitter-base voltage v ebo -5 v collector current i c -500 ma emitter current i e 500 ma collector power dissipation p c 625 mw junction temperature t j 150 storage temperature t stg -55 150
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