IRGPC50MD2 short circuit rated fast copack igbt insulated gate bipolar transistor with ultrafast soft recovery diode features ? short circuit rated -10s @125c, v ge = 15v ? switching-loss rating includes all "tail" losses ? hexfred tm soft ultrafast diodes ? optimized for medium operating frequency ( 1 to 10khz) see fig. 1 for current vs. frequency curve e g n-channel c v ces = 600v v ce(sat) 2.0v @v ge = 15v, i c = 35a description co-packaged igbts are a natural extension of international rectifier's well known igbt line. they provide the convenience of an igbt and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. these new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. thermal resistance parameter min. typ. max. units r q jc junction-to-case - igbt ------ ------ 0.64 r q jc junction-to-case - diode ------ ------ 0.83 c/w r q cs case-to-sink, flat, greased surface ------ 0.24 ------ r q ja junction-to-ambient, typical socket mount - ---- ----- 40 wt weight ------ 6 (0.21) ------ g (oz) pd - 9.1145 t o-247ac parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 60 i c @ t c = 100c continuous collector current 35 i cm pulsed collector current ? 120 a i lm clamped inductive load current ? 120 i f @ t c = 100c diode continuous forward current 25 i fm diode maximum forward current 120 t sc short circuit withstand time 10 s v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 200 w p d @ t c = 100c maximum power dissipation 78 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1 n?m) absolute maximum ratings
IRGPC50MD2 ? repetitive rating; v ge =20v, pulse width limited by max. junction temperature. ( see fig. 20 ) notes: parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage ? 600 ---- ---- v v ge = 0v, i c = 250a d v (br)ces / d t j temperature coeff. of breakdown voltage ---- 0.62 ---- v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ---- 1.8 2.0 i c = 35a v ge = 15v ---- 2.3 ---- v i c = 60a see fig. 2, 5 ---- 2.0 ---- i c = 35a, t j = 150c v ge(th) gate threshold voltage 3.0 ---- 5.5 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage ---- -14 ---- mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 11 20 ---- s v ce = 100v, i c = 35a i ces zero gate voltage collector current ---- ---- 250 a v ge = 0v, v ce = 600v ---- ---- 6500 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ---- 1.3 1.7 v i c = 25a see fig. 13 ---- 1.2 1.5 i c = 25a, t j = 150c i ges gate-to-emitter leakage current ---- ---- 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge (turn-on) ---- 120 180 i c = 35a q ge gate - emitter charge (turn-on) ---- 25 38 nc v cc = 400v q gc gate - collector charge (turn-on) ---- 40 60 see fig. 8 t d(on) turn-on delay time ---- 78 ---- t j = 25c t r rise time ---- 110 ---- ns i c = 35a, v cc = 480v t d(off) turn-off delay time ---- 340 510 v ge = 15v, r g = 5.0 w t f fall time ---- 265 400 energy losses include "tail" and e on turn-on switching loss ---- 2.1 ---- diode reverse recovery. e off turn-off switching loss ---- 4.0 ---- mj see fig. 9, 10, 11, 18 e ts total switching loss ---- 6.1 9.5 t sc short circuit withstand time 10 ---- ---- s v cc = 360v, t j = 125c v ge = 15v, r g = 5.0 w , v cpk < 500v t d(on) turn-on delay time ---- 80 ---- t j = 150c, see fig. 9, 10, 11, 18 t r rise time ---- 110 ---- ns i c = 35a, v cc = 480v t d(off) turn-off delay time ---- 610 ---- v ge = 15v, r g = 5.0 w t f fall time ---- 440 ---- energy losses include "tail" and e ts total switching loss ---- 9.4 ---- mj diode reverse recovery. l e internal emitter inductance ---- 13 ---- nh measured 5mm from package c ies input capacitance ---- 2900 ---- v ge = 0v c oes output capacitance ---- 230 ---- pf v cc = 30v see fig. 7 c res reverse transfer capacitance ---- 30 ---- ? = 1.0mhz t rr diode reverse recovery time ---- 50 75 ns t j = 25c see fig. ---- 105 160 t j = 125c 14 i f = 25a i rr diode peak reverse recovery current ---- 4.5 10 a t j = 25c see fig. ---- 8.0 15 t j = 125c 15 v r = 200v q rr diode reverse recovery charge ---- 112 375 nc t j = 25c see fig. ---- 420 1200 t j = 125c 16 di/dt = 200a/ s di (rec)m /dtdiode peak rate of fall of recovery ---- 250 ---- a/s t j = 25c see fig. during t b ---- 160 ---- t j = 125c 17 ? pulse width 80s; duty factor 0.1%. ? v cc =80%(v ces ), v ge =20v, l=10h, r g = 5.0 w , ( see fig. 19 ) ? pulse width 5.0s, single shot.
fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics IRGPC50MD2 0 10 20 30 40 0.1 1 10 10 0 f, frequency (khz) pow er d issipation = 40w duty cycle: 50% t = 125c t = 90c gate drive as specified turn-on losses include effects of reverse recovery sink j 1 10 100 1000 5 10152 0 c i , collector-to-emitter current (a) 150c 25c v , gate-to-emitter voltage (v) ge v = 100v 5s pulse width cc 1 10 100 1000 0.111 0 ce c i , collector-to-emitter current (a) 150c 25c v , collector-to-emitter voltage (v) v = 15v 20s pulse width ge
fig. 5 - collector-to-emitter voltage vs. case temperature fig. 4 - maximum collector current vs. case temperature IRGPC50MD2 fig. 6 - maximum igbt effective transient thermal impedance, junction-to-case 0 10 20 30 40 50 60 25 50 75 100 125 15 0 maximum dc collector current (a) t , case temperature (c) c v = 15v ge 1.0 1.5 2.0 2.5 3.0 3.5 -60 -40 -20 0 20 40 60 80 100 120 140 16 0 t , case temperature (c) c ce v , collector-to-emitter voltage (v) i = 70a i = 35a i = 17a c c c v = 15v 80s pulse width ge 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c
IRGPC50MD2 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. case temperature 1 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 c t , case temperature (c) total switching losses (mj) r = 5 v = 15v v = 480v g ge cc w i = 35a a i = 70a i = 17a c c c 6.0 6.1 6.2 6.3 6.4 6.5 6.6 0 102030405060 g total switching losses (mj) r , gate resistance ( ) w w v = 480v v = 15v t = 25c i = 35a cc ge c c 0 1000 2000 3000 4000 5000 6000 110100 ce c, capacitance (pf) v , collector-to-emitter voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c ge ies ge gc ce res gc oes ce gc c ies c res c oes 0 4 8 12 16 20 0306090120 ge v , gate-to-emitter voltage (v) q , total gate charge (nc) g v = 400v i = 35a ce c
fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current IRGPC50MD2 0 5 10 15 20 25 0 20406080 c total switching losses (m j) i , collector-to-emitter current (a) r = 5 t = 150c v = 480v v = 15v g c cc ge w a 1 10 100 1000 1 10 100 100 0 c ce ge v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) safe operating area v = 20v t = 125c ge j 1 10 100 0.6 1.0 1.4 1.8 2.2 2.6 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j
fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt IRGPC50MD2 0 300 600 900 1200 1500 100 1000 f di /dt - (a/s) rr q - (nc) i = 10a i = 25a i = 50a f f f v = 200v t = 125c t = 25c r j j 100 1000 10000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 50a i = 25a i = 10a f f f v = 200v t = 125c t = 25c r j j 20 40 60 80 100 120 140 100 1000 f di /dt - (a/s) t - (ns) rr i = 50a i = 25a i = 10a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 10a i = 25a i = 50a f f f v = 200v t = 125c t = 25 c r j j
t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff = fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = er ec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt same t ype device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr IRGPC50MD2
vg gate signal device under tes t current d.u.t. vol tage i n d. u.t. current in d1 t0 t1 t2 fig. 18e - macro waveforms for test circuit of fig. 18a fig. 19 - clamped inductive load test circuit r l = 480v 4 x i c @25c 0 - 480v fig. 20 - pulsed collector current test circuit IRGPC50MD2 dimensions in millimeters and ( inches ) conforms to jedec outline to-247ac (to-3p) - d - 5.30 (.209) 4.70 (.185) 3.65 (.143) 3.55 (.140) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 12 3 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) * notes: 1 dimensions & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 dimensions are shown millimeters (inches). 4 conforms t o jedec outline to-247ac. lead assignments 1 - gate 2 - collector 3 - emit ter 4 - collector * longer leaded (20mm) version available (to-247ad) to order add "-e" suffix to part number d.u.t. v * c 50v l 1000v 6000f 100v
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