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revisions ltr description date (yr-mo-da) approved c update boilerplate of document. add devices 06 and 07. add vendor cage 61772 as source of supply for devices 06 and 07. editorial changes throughout. 93-11-15 m. a. frye d changes in accordance with nor 5962-r187-95 95-08-14 m. a. frye e updated boilerplate to one-part, one-part number format. added provisions for the inclusion of radiation-hardened devices. - glg 00-01-21 raymond monnin f drawing updated to reflect current requirements. - glg 01-01-17 raymond monnin g updated boilerplate paragraphs. added 08 device. ksr 01-07-27 raymond monnin h added packages t and n. dose rate and total dose numbers were changed; vendor had not previously shipped radhard devices. ksr 02-02-04 raymond monnin the original first page of th is drawing has been replaced. rev sheet rev h h h h h h h h h h h h h h h h h h sheet 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 rev status rev h h h h h h h h h h h h h h of sheets sheet 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pmic n/a prepared by kenneth rice standard microcircuit drawing checked by ray monnin defense supply ce nter columbus columbus, ohio 43216 http://www.d scc.dla.mil this drawing is available for use by all approved by michael. a. frye departments and agencies of the department of defense drawing approval date 08 nov 1989 microcircuits, memory, digital, cmos, 4k x 9 fifo, monolithic silicon amsc n/a size a cage code 67268 5962-89568 revision level h sheet 1 of 31 dscc form 2233 apr 97 5962-e221-02 distribution statement a . approved for public release; distribution is unlimited.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope . this drawing documents two product assurance class le vels consisting of high reliability (device classes q and m) and space application (device class v). a choice of case outlines and lead finishes are available and are reflected in the part or identifying number (pin). when available, a choice of radiation hardness assurance (rha ) levels are reflected in the pin. 1.2 pin . the pin shall be as shown in the following example: for device classes m and q not using class designator in the pin: 5962 - 89568 01 x x | | | | | | | | | | | | | | | federal rha device case lead stock class designator type outline finish designator (see 1.2.1) (see 1.2. 2) (see 1.2.4) (see 1.2.5) \ / \/ drawing number for device classes q and v where class designator is included in the pin: 5962 d 89568 01 q x c | | | | | | | | | | | | | | | | | | federal rha device device case lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) \ / (see 1.2.3) \/ drawing number 1.2.1 (rha) designator . device classes q and v rha marked devices meet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. device class m rha marked devices meet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash (-) indicates a non-rha device. 1.2.2 device type(s) . the device type(s) shall identify the circuit function as follows: device type generic number circuit function access time 01 7204 4k x 9-bit parallel fifo 120 ns 02 7204 4k x 9-bit parallel fifo 80 ns 03 7204 4k x 9-bit parallel fifo 65 ns 04 7204 4k x 9-bit parallel fifo 50 ns 05 7204 4k x 9-bit parallel fifo 40 ns 06 7204 4k x 9-bit parallel fifo 30 ns 07 7204 4k x 9-bit parallel fifo 20 ns 08 7204 4k x 9-bit parallel fifo (very low power) 15 ns 1.2.3 device class designator . the device class designator shall be a single letter identifying the product assurance level as listed below. device class device requirements documentation m vendor self-certification to the requi rements for non-jan class b microcircuits in accordance with mil-prf-38535, appendix a q or v certification and qualification to mil-prf-38535
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 3 dscc form 2234 apr 97 1.2.4 case outline(s) . the case outline(s) shall be as designated in mil-std-1835, and as follows: outline letter descriptive designator terminals package style x gdip1-t28 or cdip2-t28 28 dual-in-line package y gdfp2-f28 28 flat package z cqcc1-n32 32 rectangular chip carrier u gdip4-t28 or cdip3-t28 28 dual-in-line package t see figure 1 28 dual-in-line package n see figure 1 28 flat package 1.2.5 lead finish . the lead finish is as specified in mil-prf-38535, appendix a. 1.3 absolute maximum ratings . terminal voltage with respect to gr ound.................................... -0.5 v dc to +7.0 v dc dc output current ...................................................................... 50 ma storage temperature range ....................................................... -65 c to +155 c maximum power dissi pation ...................................................... 1.0 w lead temperature (soldering, 10 seconds) ................................ +260 c thermal resistance, junction-to-case ( jc ) ................................ see mil-std-1835 junction temperature (t j ) .......................................................... +150 c 1 / 1.4 recommended operating conditions . supply voltage range (v cc )........................................................ +4.5 v dc to +5.5 v dc minimum high level input voltage (v ih ) ...................................... 2.2 v dc minimum 2 / input low voltage (v il ) ................................................................ 0.8 v dc maximum 3 / case operating temperature range (t c ) .................................... -55 c to +125 c 1.5 radiation features . maximum total dose available (dose ra te = 0.1 rad/s) --------------------------- 10 k rads(si) 2. applicable documents 2.1 government specification, standards, and handbooks . the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the i ssues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation. specification department of defense mil-prf-38535 - integrated circuits, m anufacturing, general specification for. standards department of defense mil-std-883 - test method standard microcircuits. mil-std-1835 - interface standard elec tronic component case outlines. 1 / maximum junction temperature may be increas ed to +175 c during burn-in and steady state life. 2 / v ih is 2.2 v minimum for all input pins except xi which is 3.5 v minimum. 3 / 1.5 v undershoots are allowed for 10 ns once per cycle.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 4 dscc form 2234 apr 97 handbooks department of defense mil-hdbk-103 - list of standard microcircuit drawings (smd's). mil-hdbk-780 - standard microcircuit drawings. 2.2 non-government publications . the following document(s) form a part of this document to the extent specified herein. unless otherwise specified, the issues of the documents which are dod adopted are t hose listed in the issue of the dodiss cited in the solicitation. unless otherwise specified, the issues of documents not lis ted in the dodiss are the issues of the documents cited in the solicitation. american society for testing and materials (astm) astm standard f1192m-95 - standard guide fo r the measurement of single event phenomena from heavy ion irradiation of semiconductor devices. (applications for copies of astm public ations should be addressed to the americ an society for testing and materials, 1916 race street, philadelphia, pa 19103). electronics industries association (eia) jedec standard eia/jesd78 - ic latch-up test. (applications for copies should be address ed to the electronics industries associat ion, 2500 wilson boulevard, arlington, va 22201.) (non-government standards and other publicat ions are normally available from the organizations that prepare or distribute the documents. these documents also may be available in or through libraries or other informational services.) 2.3 order of precedence . in the event of a conflict between the text of th is drawing and the references cited herein, the text of this drawing shall take precedence. nothing in this document, however, supersedes applic able laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 item requirements . the individual item requirements for device cl asses q and v shall be in accordance with mil-prf- 38535 and as specified herein or as modified in the device manufacturer's quality managem ent (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as descr ibed herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non- jan class level b devices and as specified herein. 3.2 design, construction, and physical dimensions . the design, construction, and physica l dimensions shall be as specified in mil-prf-38535 and herein for device classes q and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outline(s) . the case outline(s) shall be in a ccordance with 1.2.4 herein and figure 1. 3.2.2 terminal connections . the terminal connections sha ll be as specified on figure 2. 3.2.3 truth table(s) . the truth table(s) shall be as specified on figure 3. 3.2.4 radiation exposure circuit . the radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 electrical performanc e characteristics and postirr adiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as s pecified in table i and shall apply over th e full case operating temperature range. 3.4 electrical test requirements . the electrical test requirements shall be the subgroups specified in tabl e iia. the electrical tests for each subgroup are defined in table i.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 5 dscc form 2234 apr 97 3.5 marking . the part shall be marked with the pin listed in 1.2 her ein. in addition, the manufacturer's pin may also be marked as listed in mil-hdbk-103. for pa ckages where marking of the entire smd pi n number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device cl asses q and v shall be in accordance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certification/compliance mark . the certification mark for device classes q and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certificate of compliance . for device classes q and v, a certificate of compliance shall be required from a qml-38535 listed manufacturer in order to supply to t he requirements of this drawing (see 6.6.1 herein). for device class m, a certifica te of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil-hdbk-103 (see 6.6.2 herein). the certificate of compliance submitted to ds cc-va prior to listing as an approv ed source of supply for this drawing shall affirm that the manufactu rer's product meets, for device classes q and v, the requirements of mil-prf-38535 and herein or for device class m, the requi rements of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance . a certificate of conformance as requir ed for device classes q and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided wi th each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m . for device class m, notification to dscc-va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in mil-prf-38535, appendix a. 3.9 verification and review for device class m . for device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. offs hore documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m . device class m devices covered by this drawing shall be in microcircuit group number 41 (see mil-prf-38535, appendix a). 4. quality assurance provisions 4.1 sampling and inspection . for device classes q and v, sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer's qua lity management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening . for device classes q and v, screening shall be in accordance with mil-prf-38535, and shall be conducted on all devices prior to qualification and technology conform ance inspection. for device class m, screening shall be in accordance with method 5004 of mil-std-883, and shall be conduct ed on all devices prior to qua lity conformance inspection. 4.2.1 additional criteria for device class m . a. delete the sequence specified as initial (preburn-in) elec trical parameters through interi m (postburn-in) electrical parameters of method 5004 and substitute li nes 1 through 6 of table iia herein. b. the test circuit shall be maintained by the manufac turer under document revision level control and shall be made available to the preparing or acquiring activity upon request. t he test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance wi th the intent specified in test method 1015. (1) dynamic burn-in (method 1015 of mil-std-883, test condition c or d; for circuit, see 4.2.1b herein). c. interim and final electrical parameters s hall be as specified in table iia herein.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 6 dscc form 2234 apr 97 table i. electrical perfo rmance characteristics. limits test symbol conditions -55 c t c +125 c v ss = 0 v 4.5 v v cc 5.5 v unless otherwise specified group a subgroups device type min max unit 0.0 v v in v cc 1, 2, 3 all -10 10 input leakage current i li m, d 1 1 / 2 / 2 / a 0.0 v v in v cc r v ih 1, 2, 3 all -10 10 output leakage current i lo m, d 1 1 / 2 / 2 / a v cc = 4.5 v, i ol = 8 ma 1, 2, 3 all 0.4 output low voltage v ol v il = 0.8, v ih = 2.2 v m, d 1 1 / 2 / v v cc = 4.5 v, i oh = -2 ma v il = 0.8, v ih = 2.2 v 1, 2, 3 all 2.4 output high voltage v oh m, d 1 1 / 2 / v 01-04, 06,07 150 f = f s , outputs open, v cc = 5.5 v 08 120 f = 15.3 mhz outputs open 1, 2, 3 05 150 operating supply current i cc1 v cc = 5.5 v m, d 1 1 / 2 / ma 01-07 25 r = w = rs = fl / rt = v ih 1, 2, 3 08 5 standby current i cc2 outputs open m, d 1 1 / 2 / ma 01-07 4 all inputs = vcc -0.2 v, outputs open 1, 2, 3 08 0.4 power down current i cc3 m, d 1 1 / 2 / ma 01-05, 08 8 input capacitance c in 4 06,07 10 pf output capacitance c out v i = 0.0 v, f = 1 mhz ta = +25 c, see 4.4.1e 4 all 12 pf see 4.4.1c 7,8a,8b functional tests m, d 7 1 / 2 / 2 / see footnotes at end of table.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 7 dscc form 2234 apr 97 table i. electrical per formance characteristics continued. limits test symbol conditions -55 c t c +125 c v ss = 0 v 4.5 v v cc 5.5 v unless otherwise specified group a subgroups device type min max unit 01 7.0 02 10 03 12.5 04 15 05 20 06 25 07 33.3 f s c l = 30 pf, see figures 4 and 5 9,10,11 08 40 shift frequency m, d 9 1 / 2 / mhz 01 140 02 100 03 80 04 65 05 50 06 40 07 30 t rc c l = 30 pf, see figures 4 and 5 9,10,11 08 25 read cycle time m, d 9 1 / 2 / ns 01 120 02 80 03 65 04 50 05 40 06 30 07 20 t a c l = 30 pf, see figures 4 and 5 9,10,11 08 15 access time m, d 9 1 / 2 / ns 01,02 20 03,04 15 t rr c l = 30 pf, see figures 4 and 5 9,10,11 05-08 10 read recovery time m, d 9 1 / 2 / ns see footnotes at end of table.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 8 dscc form 2234 apr 97 table i. electrical performanc e characteristics continued. limits test symbol conditions -55 c t c +125 c v ss = 0 v 4.5 v v cc 5.5 v unless otherwise specified group a subgroups device type min max unit 01 120 02 80 03 65 04 50 05 40 06 30 07 20 t rpw c l = 30 pf, see figures 4 and 5 9,10,11 08 15 read pulse width m, d 9 1 / 2 / ns 01-04 10 05-07 5.0 t rlz 3 / c l = 30 pf, see figures 4 and 5 9,10,11 08 0 read pulse low to data bus at low z m, d 9 1 / 2 / ns 01-04 06,07 5.0 05 10 t wlz 3 / 4 / c l = 30 pf, see figures 4 and 5 9,10,11 08 3 write pulse low to data bus at low z m, d 9 1 / 2 / ns c l = 30 pf, see figures 4 and 5 9,10,11 all 5.0 data valid from read pulse high t dv m, d 9 1 / 2 / ns see footnotes at end of table.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 9 dscc form 2234 apr 97 table i. electrical performanc e characteristics continued. limits test symbol conditions -55 c t c +125 c v ss = 0 v 4.5 v v cc 5.5 v unless otherwise specified group a subgroups device type min max unit 01 35 02-04 30 05 25 06 20 t rhz 3 / c l = 30 pf, see figures 4 and 5 9,10,11 07,08 15 read pulse high to data bus high z m, d 9 1 / 2/ ns 01 140 02 100 03 80 04 65 05 50 06 40 07 30 t wc c l = 30 pf, see figures 4 and 5 9,10,11 08 25 write cycle time m, d 9 1 / 2/ ns 01 120 02 80 03 65 04 50 05 40 06 30 07 20 t wpw c l = 30 pf, see figures 4 and 5 9,10,11 08 15 write pulse width m, d 9 1 / 2/ ns 01-02 20 03-04 15 t wr c l = 30 pf, see figures 4 and 5 9,10,11 05-08 10 write recovery time m, d 9 1 / 2/ ns 01,02 40 03,04 30 05 20 06 18 07 12 t ds c l = 30 pf, see figures 4 and 5 9,10,11 08 9 data setup time m, d 9 1 / 2/ ns see footnotes at end of table.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 10 dscc form 2234 apr 97 table i. electrical performanc e characteristics continued. limits test symbol conditions -55 c t c +125 c v ss = 0 v 4.5 v v cc 5.5 v unless otherwise specified group a subgroups device type min max unit 01-03 10 04 5.0 t dh c l = 30 pf, see figures 4 and 5 9,10,11 05-08 0 data hold time m, d 9 1 / 2/ ns 01 140 02 100 03 80 04 65 05 50 06 40 07 30 t rsc c l = 30 pf, see figures 4 and 5 9,10,11 08 25 reset cycle time m, d 9 1 / 2/ ns 01 120 02 80 03 65 04 50 05 40 06 30 07 20 c l = 30 pf, see figures 4 and 5 9,10,11 08 15 reset pulse width t rs m, d 9 1 / 2/ ns 01,02 20 03,04 15 t rsr c l = 30 pf, see figures 4 and 5 9,10,11 05-08 10 reset recovery time m, d 9 1 / 2/ ns 01 120 02 80 03 65 04 50 05 40 06 30 t rss 3 / c l = 30 pf, see figures 4 and 5 9,10,11 07,08 20 reset setup time m, d 9 1 / 2/ ns see footnotes at end of table.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 11 dscc form 2234 apr 97 table i. electrical performanc e characteristics continued. limits test symbol conditions -55 c t c +125 c v ss = 0 v 4.5 v v cc 5.5 v unless otherwise specified group a subgroups device type min max unit 01 140 02 100 03 80 04 65 05 50 06 40 07 30 t rtc c l = 30 pf, see figures 4 and 5 9,10,11 08 25 retransmit cycle time m, d 9 1 / 2/ ns 01 120 02 80 03 65 04 50 05 40 06 30 07 20 t rt 3 / c l = 30 pf, see figures 4 and 5 9,10,11 08 15 retransmit pulse width m, d 9 1 / 2/ ns 01,02 20 03,04 15 t rtr c l = 30 pf, see figures 4 and 5 9,10,11 05-08 10 retransmit recovery time m, d 9 1 / 2/ ns 01 140 02 100 03 80 04 65 05 50 06 40 07 30 t efl c l = 30 pf, see figures 4 and 5 9,10,11 08 25 reset to empty flag low m, d 9 1 / 2/ ns see footnotes at end of table.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 12 dscc form 2234 apr 97 table i. electrical performanc e characteristics continued. limits test symbol conditions -55 c t c +125 c v ss = 0 v 4.5 v v cc 5.5 v unless otherwise specified group a subgroups device type min max unit 01-03 60 04 45 05 35 06 30 07 20 t ref c l = 30 pf, see figures 4 and 5 9,10,11 08 15 read low to empty flag low m, d 9 1 / 2/ ns 01-03 60 04 45 05 35 06 30 07 20 t rff c l = 30 pf, see figures 4 and 5 9,10,11 08 25 read high to full flag high m, d 9 1 / 2/ ns 01-03 60 04 45 05 35 06 30 07 20 t wef c l = 30 pf, see figures 4 and 5 9,10,11 08 15 write high to empty flag high m, d 9 1 / 2/ ns 01-03 60 04 45 05 35 06 30 t wff c l = 30 pf, see figures 4 and 5 9,10,11 07,08 20 write low to full flag low m, d 9 1 / 2/ ns 01 140 02 100 03 80 04 65 05 50 06 40 07 30 c l = 30 pf, see figures 4 and 5 9,10,11 08 25 reset to half-full and full-flag high t hfh t ffh m, d 9 1 / 2/ ns see footnotes at end of table.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 13 dscc form 2234 apr 97 table i. electrical performanc e characteristics continued. limits test symbol conditions -55 c t c +125 c v ss = 0 v 4.5 v v cc 5.5 v unless otherwise specified group a subgroups device type min max unit 01 120 02 80 03 65 04 50 05 40 06 30 07 20 t xol c l = 30 pf, see figures 4 and 5 9,10,11 08 15 expansion out low delay from clock m, d 9 1 / 2/ ns 01 120 02 80 03 65 04 50 05 40 06 30 07 20 t xoh c l = 30 pf, see figures 4 and 5 9,10,11 08 15 expansion out high delay from clock m, d 9 1 / 2/ ns 01 120 02 80 03 65 04 50 05 40 06 30 07 20 t xi c l = 30 pf, see figures 4 and 5 9,10,11 08 15 xi pulse width m, d 9 1 / 2/ ns c l = 30 pf, see figures 4 and 5 9,10,11 all 10 xi recovery time t xir m, d 9 1 / 2/ ns see footnotes at end of table.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 14 dscc form 2234 apr 97 table i. electrical performanc e characteristics continued. limits test symbol conditions -55 c t c +125 c v ss = 0 v 4.5 v v cc 5.5 v unless otherwise specified group a subgroups device type min max unit 01-05 15 t xis c l = 30 pf, see figures 4 and 5 9,10,11 06-08 10 xi set-up time m, d 9 1 / 2/ ns 01 120 02 80 03 65 04 50 05 40 06 30 07 20 t rts c l = 30 pf, see figures 4 and 5 9,10,11 08 15 retransmit setup time m, d 9 1 / 2/ ns 01 120 02 80 03 65 04 50 05 40 06 30 07 20 t rpe c l = 30 pf, see figures 4 and 5 9,10,11 08 15 read pulse width after ef high m, d 9 1 / 2/ ns 01 140 02 100 03 80 04 65 05 50 06 40 t whf c l = 30 pf, see figures 4 and 5 9,10,11 07-08 30 write low to half-full flag low m, d 9 1 / 2/ ns see footnotes at end of table.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 15 dscc form 2234 apr 97 table i. electrical performanc e characteristics continued. limits test symbol conditions -55 c t c +125 c v ss = 0 v 4.5 v v cc 5.5 v unless otherwise specified group a subgroups device type min max unit 01 140 02 100 03 85 04 65 05 50 06 40 t rhf c l = 30 pf, see figures 4 and 5 9,10,11 07,08 30 read high to half-full flag high m, d 9 1 / 2/ ns 01 120 02 80 03 65 04 50 05 40 06 30 07 20 t wpf c l = 30 pf, see figures 4 and 5 9,10,11 08 15 write pulse width after ff high m, d 9 1 / 2/ ns 1 / when performing postirradiation electr ical measurements for any rha level t a = +25 c. limits shown are guaranteed at t a = +25 c. the m and d in the test condition column are the pos tirradiation limits for the device types specified in the device types column. 2 preirradiation values for rha marked devices shall also be the postirradiati on values, unless otherwise specified. 3 / if not tested, shall be guaranteed to the limits specified in table i. 4 / only applies to read data flow through mode.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 16 dscc form 2234 apr 97 case outline t note: lead finishes are in accordance with mil-prf-38535. figure 1. case outlines .
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 17 dscc form 2234 apr 97 case outline t - continued. millimeters inches symbol min max min max a 3.30 5.84 .130 .230 q 0.38 2.54 .015 .100 b 0.36 0.58 .014 .023 b1 0.96 1.65 .038 .065 c 0.20 0.38 .008 .015 d - 37.72 - 1.485 s1 0.13 - .005 - e 6.10 7.87 .240 .310 l 2.92 5.08 .115 .200 s - 2.54 - .100 e1 7.37 8.13 .290 .320 e 2.54 bsc .100 bsc s2 0.13 - .005 - 0 ? 15 0 ? 15 l1 3.30 - .130 - n 28 note: although dimensions are in inches, t he us government preferred system of m easurement is the metric si system. however, since this item was originally designed using inch-pound units of measuremen t, in the event of conflict between the two, the inch-pound units shall take precedence. metric equivalents are for general information only. figure 1. case outlines - continued.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 18 dscc form 2234 apr 97 case outline n. note: lead finishes are in accordance with mil-prf-38535. figure 1. case outlines - continued.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 19 dscc form 2234 apr 97 case outline n - continued. millimeters inches symbol min max min max a 2.29 3.30 .090 .130 b 0.38 0.48 .015 .019 c 0.08 0.15 .003 .006 d --- 18.80 --- .740 e 9.65 10.67 .380 .420 e2 4.57 --- .180 --- e3 0.76 --- .030 --- e 1.27 bsc .050 bsc l 6.35 9.40 .250 .370 q 0.66 --- .026 --- s --- 1.30 --- .051 s1 0.00 --- .000 --- n 28 figure 1. case outlines - continued.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 20 dscc form 2234 apr 97 device types all case outlines x,y,u,t,n z terminal number terminal symbol 1 w nc 2 d 8 w 3 d 3 d 8 4 d 2 d 3 5 d 1 d 2 6 d 0 d 1 7 xi d 0 8 ff xi 9 q 0 ff 10 q 1 q 0 11 q 2 q 1 12 q 3 nc 13 q 8 q 2 14 gnd q 3 15 r q 8 16 q 4 gnd 17 q 5 nc 18 q 6 r 19 q 7 q 4 20 hf / xo q 5 21 ef q 6 22 rs q 7 23 fl/rt hf / xo 24 d 7 ef 25 d 6 rs 26 d 5 fl/rt 27 d 4 nc 28 v cc d 7 29 d 6 30 d 5 31 d 4 32 v cc nc = no connection figure 2. terminal connections .
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 21 dscc form 2234 apr 97 reset and retransmit single device configuration/width expansion mode | | | | | | mode | inputs | internal status | outputs | | | | | | | | | | | | | | | | | | rs | rt | xi | read pointer | write pointer | ef | ff | hf | | | | | | | | | | | | | | | | | | | | | | reset | 0 | x | 0 | location zero | location zero | 0 | 1 | 1 | | retransmit | 1 | 0 | 0 | location zero | unchanged | x | x | x | | read/write | 1 | 1 | 0 | increment 1 / | increment 1 / | x | x | x | | | | | | | | | | | 1 / pointer will increment if flag is high. reset and first load depth expansion/compound expansion mode | | | | | | | inputs | internal status | outputs | | | | | | | | | | | | | | | | mode | rs | fl | xi | read pointer | write pointer | ef | ff | | | | | | | | | | | | | | | | | | | | reset first device | 0 | 0 | 1 / | location zero | location zero | 0 | 1 | | reset all other devices | 0 | 1 | 1 / | location zero | location zero | 0 | 1 | | read/write | 1 | x | 1 / | x | x | x | x | | | | | | | | | | 1 / xi is connected to xo of previous device. notes: rs = reset input, fl / rt = first load/retransmit, ef = empty flag output, ff = full flag output, xi = expansion input, and hf = half-full flag output 0 = low level voltage 1 = high level voltage x = don't care figure 3. truth tables .
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 22 dscc form 2234 apr 97 note: c l includes scope and jig capacitance. ac test conditions | | | | input pulse levels | gnd to 3.0 v | | input rise and fall times | 5 ns | | input timing reference levels | 1.5 v | | output reference levels | 1.5 v | | | | figure 4. output load circuit and ac test conditions .
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 23 dscc form 2234 apr 97 notes: 1. ef , ff , and hf may change status during reset but flags will be valid at t rsc . 2. w and r = v ih around the rising edge of rs . figure 5. timing waveforms - continued.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 24 dscc form 2234 apr 97 figure 5. timing waveforms - continued.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 25 dscc form 2234 apr 97 note 3: ef , ff , and hf may change status during retransmit but flags will be valid to t rtc . figure 5. timing waveforms - continued.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 26 dscc form 2234 apr 97 figure 5. timing waveforms - continued.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 27 dscc form 2234 apr 97 figure 5. timing waveforms .
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 28 dscc form 2234 apr 97 table iia. electrical test requirements . 1 / 2 / 3 / 4 / 5 / 6 / 7 / subgroups (per method 5005, table i) subgroups (per mil-prf-38535, table iii) line no. test requirements device class m device class q device class v 1 interim electrical parameters (see 4.2) 1,7,9 1,7,9 2 static burn-in i method 1015 not required not required not required 3 same as line 1 1*,7* ? 4 dynamic burn-in (method 1015) required required required 5 same as line 1 1*,7* ? 6 final electrical parameters 1*,2,3,7*, 8a,8b,9,10,11 1*,2,3,7*, 8a,8b,9,10,11 1*,2,3,7*, 8a,8b,9,10,11 7 group a test requirements 1,2,3,4**,7,8a, 8b,9,10,11 1,2,3,4**,7, 8a,8b,9,10,11 1,2,3,4**,7, 8a,8b,9,10,11 8 group c end-point electrical parameters 2,3,7, 8a,8b 2,3,7, 8a,8b 1,2,3,7, 8a,8b,9,10,11 ? 9 group d end-point electrical parameters 2,3,7, 8a,8b 2,3,7, 8a,8b 2,3,7 8a,8b 10 group e end-point electrical parameters 1,7,9 1,7,9 1,7,9 1 / blank spaces indicate tests are not applicable. 2 / any or all subgroups may be combined when using high-speed testers. 3 / subgroups 7 and 8 functional tests shall verify the truth table. 4 / * indicates pda applies to subgroups 1 and 7. 5 / ** see 4.4.1e. 6 / ? indicates delta limit (see table iib) shall be requi red where specified, and the delta values shall be computed with reference to the previous interim elec trical parameters (see line 1).for device classes q and v performance of delta limits shall be as s pecified in the manufacturer's qm plan. 7 / see 4.4.1d. 4.2.2 additional criteria for device classes q and v . a. the burn-in test duration, test condition and test temperatur e, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the burn-in test circuit shall be maintained under document revision level control of the device manufacturer' s technology review board (trb) in accordance with mil- prf-38535 and shall be made available to the acquiring or prepari ng activity upon request. the te st circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of mil-std-883. b. interim and final electrical test parameter s shall be as specified in table iia herein. c. additional screening for device class v beyond the requirem ents of device class q shall be as specified in mil-prf- 38535, appendix b.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 29 dscc form 2234 apr 97 4.3 qualification inspection for device classes q and v . qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. inspections to be perform ed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspec tions (see 4.4.1 through 4.4.4). 4.4 conformance inspection . technology conformance inspection for classe s q and v shall be in accordance with mil-prf- 38535 including groups a, b, c, d, and e in spections and as specified herein except where option 2 of mil-prf-38535 permits alternate in-line control testing. quality conformance ins pection for device class m shall be in accordance with mil-prf-38535 , appendix a and as specified herein. inspecti ons to be performed for device class m s hall be those specified in method 5005 of mil-std-883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4.1 group a inspection . a. tests shall be as specified in table iia herein. b. subgroups 5 and 6 of table i of method 5005 of mil-std-883 shall be omitted. c. for device class m, subgroups 7 and 8 tests shall be sufficient to verify the truth table. for device classes q and v, subgroups 7 and 8 shall include verifying the functionality of the device. d. o/v (latch-up) tests shall be measured only for initial qualification and after any design or process changes which may affect the performance of the device. for device class m, procedures and circuits s hall be maintained under document revision level control by the manufacturer and shall be made av ailable to the preparing acti vity or acquiring activity upon request. for device classes q and v, the procedures and circuits shall be under the control of the device manufacturer's trb in accordance with mil-prf-38535 and s hall be made available to the preparing activity or acquiring activity upon request. testing shall be on all pins, on fi ve devices with zero failures. latch-up test shall be considered destructive. informat ion contained in jedec standard eia/ jesd78 may be used for reference. e. subgroup 4 (c in and c out measurements) shall be measured only for in itial qualification and after any process or design changes which may affect input or output c apacitance. capacitance shall be measured between the designated terminal and gnd at a frequency of 1 mhz. sample size is 15 devices with no failures, and all input and output terminals tested. 4.4.2 group c inspection . the group c inspection end-point el ectrical parameters shall be as s pecified in table iia herein. 4.4.2.1 additional criteria for device class m . a. steady-state life test conditions, method 1005 of mil-std-883: (1) test condition c. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activi ty upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005. (2) t a = +125 c, minimum. (3) test duration: 1,000 hours, except as specified in method 1005 of mil-std-883. 4.4.2.2 additional criteria for device classes q and v . the steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the test circuit shall be maintained under document revision level cont rol by the device manufacturer's trb in accordance with mil- prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. 4.4.3 group d inspection . the group d inspection end-point electrical paramet ers shall be as specified in table iia herein.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 30 dscc form 2234 apr 97 table iib. delta limits at +25 c . | | device types | | parameter 1 / | | | | all | | i cc2 ,i cc3 | + 10% of specified value | | | in table i. | | i li , i lo | + 10% of specified value | | | in table i. | 1 / the above parameter shall be recorded before and after the required burn-in and life tests to determine the delta. 4.4.4 group e inspection . group e inspection is required only for par ts intended to be marked as radiation hardness assured (see 3.5 herein). rha levels for device classes m, q and v shall be as specified in mil-prf-38535. end-point electrical parameters shall be as specified in table iia herein. 4.4.4.1 total dose irradiation testing . total dose irradiation testing shall be performed in accordance with mil-std-883 method 1019, condition b and as specified herein. 4.4.4.1.1 accelerated aging test . accelerated aging tests shall be performed on all devices requiring a rha level greater than 5k rads(si). the post-anneal end-point electrical parameter limits shall be as specified in table ia herein and shall be the pre-irradiation end-point electr ical parameter limit at 25 c 5 c. testing shall be performed at initial qualification and after any design or process changes which may affe ct the rha response of the device. 4.4.4.2 dose rate induced latchup testing . dose rate induced latchup testing shall be performed in accordance with test method 1020 of mil-std-883 and as specified herein. test sha ll be performed on devices, sec, or approved test structures at technology qualification and after any design or process changes which may affect the rha capability of the process. 4.4.4.3 dose rate upset testing . dose rate upset testing shall be performed in accordance with test method 1021 of mil- std-883 and herein. a. transient dose rate upset testing shall be performed at initial qualification and after any design or process changes which may affect the rha performance of the devices. test 10 devices with 0 defects unless otherwise specified. b. transient dose rate upset testing for class q and v devices shall be performed as specified by a trb approved radiation hardness assurance plan and mil-prf-38535. 4.4.4.4 single event phenomena (sep) . sep testing shall be required on class v devices. sep testing shall be performed on the standard evaluation circuit (sec) or alternate sep test vehicle as approved by the qualifying activity at initial qualification and after any design or process changes which may affe ct the upset or latchup characteristics. test four devices with zero failures. astm standard f1192 may be used as a guide line when performing sep testing. the test conditions for sep are as follows: a. the ion beam angle of incidence shall be normal to the di e surface and 60 degrees to the normal, inclusive (i.e., 0 < angle < 60 ). no shadowing of the ion beam due to fixturing or package related effects is allowed. b. the fluence shall be greater than 100 errors or > 10 7 ions/cm 2 . c. the flux shall be between 10 2 and 10 5 ion/cm 2 /s. the cross section shall be verified to be flux independent by measuring the cross section at two flux rates which differ by at least an order of magnitude. d. the particle range shall be > 20 microns in silicon. e. the test temperature shall be +25 c and the maximum rated operating temperature + 10 c. f. bias conditions shall be v dd = 3.14 v dc for the upset measurements and v dd = 3.46 v dc for the latchup measurements. g. test four devices with zero failures. h. sep test limits shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 31 dscc form 2234 apr 97 4.5 delta measurements for device class v . delta measurements, as specified in table iia, shall be made and recorded before and after the required burn-in screens and steady-state life tests to determine delta compliance. the electrical parameters to be measured, with associated delta limits are listed in table iib. the device manufacturer may, at his option, either perform delta measurements or within 24 hours after life te st perform final electrical par ameter tests, subgroups 1, 7, 9. 5. packaging 5.1 packaging requirements . the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 6. notes 6.1 intended use . microcircuits conforming to this drawing are in tended for use for government microcircuit applications (original equipment), design applic ations, and logistics purposes. 6.1.1 replaceability . microcircuits covered by this drawing will repl ace the same generic device covered by a contractor- prepared specification or drawing. 6.1.2 substitutability . device class q devices will replace device class m devices. 6.2 configuration control of smd's . all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this coordination will be a ccomplished using dd form 1692, engineering change proposal. 6.3 record of users . military and industrial users shall inform defens e supply center columbus when a system application requires configuration control and which smd's are applicable to t hat system. dscc will maintain a record of users and this li st will be used for coordination and distribution of changes to the dr awings. users of drawings covering microelectronics devices (fsc 5962) should contact dscc-va, telephone (614) 692-0544. 6.4 comments . comments on this drawing should be directed to dscc-va, columbus, ohio 43216-5000, or telephone (614) 692-0547. 6.5 abbreviations, symbols, and definitions . the abbreviations, symbols, and definitions used herein are defined in mil- prf-38535 and mil-std-1331, and as follows. c in ................................................... input terminal capacitance. c out ................................................ output and bidire ctional output terminal capacitance. gnd................................................ ground zero voltage potential. i cc ................................................... supply current. i li ..................................................... input leakage current. i lo ................................................... output leakage current. t c .................................................... case temperature. v cc .................................................. positive supply voltage.
standard microcircuit drawing size a 5962-89568 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 32 dscc form 2234 apr 97 6.5.2 waveforms . waveform symbol input output must be valid will be valid change from h to l will change from h to l change from l to h will change from l to h don't care any change permitted changing state unknown high impedance 6.6 sources of supply . 6.6.1 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml- 38535. the vendors listed in qml-38535 have submitted a certif icate of compliance (see 3.6 herein) to dscc-va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m . approved sources of supply for cl ass m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agreed to this drawi ng and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc-va.
standard microcircuit drawing bulletin date: 02-02-04 approved sources of supply for smd 5962-89568 are listed below for immediate acquisition only and shall be added to mil-hdbk-103 and qml-38535 during the next revision. mil-hdbk-103 and qml-38535 will be revised to include the addition or deletion of sources. the vendors lis ted below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by dscc- va. this bulletin is superseded by the next dated revision of mil-hdbk-103 and qml-38535 . | | | | | standardized |vendor | vendor | | military drawing | cage | similar | | pin 1 / |number | pin 3 / | | | | | | | | | | 5962-8956801xa | 61772 | idt7204l120db | | | 2 / | mm1i-67204-55mb | | | | | | 5962-8956801ya | 61772 | idt7204l120xeb | | | | | | 5962-8956801za | 61772 | idt7204l120lb | | | 2 / | mm4j-67204-55mb | | | | | | 5962-8956802xa | 61772 | idt7204l80db | | | 2 / | mm1i-67204-55mb | | | | | | 5962-8956802ya | 61772 | idt7204l80xeb | | | | | | 5962-8956802za | 61772 | idt7204l80lb | | | 2 / | mm4j-67204-55mb | | | | | | 5962-8956803xa | 61772 | idt7204l65db | | | 2 / | mm1i-67204-55mb | | | | | | 5962-8956803ya | 61772 | idt7204l65xeb | | | | | | 5962-8956803za | 61772 | idt7204l65lb | | | 2 / | mm4j-67204-55mb | | | | | | 5962-8956804xa | 61772 | idt7204l50db | | | 2 / | mm1i-67204-45mb | | | 2 / | am7204a-50bxa | | | | | | 5962-8956804ua | 61772 | idt7204l50tdb | | | | | | 5962-8956804ya | 61772 | idt7204l50xeb | | | | | | 5962-8956804za | 61772 | idt7204l50lb | | | 2 / | mm4j-67204-45mb | | | 2 / | am7204a-50bua | | | | | | 5962-8956804quc | 2 / |mmcp-67204ev-50mq | | | | | | 5962-8956804vuc | 2 / |smcp-67204ev-50sv | | | | | | 5962-8956804qyc | 2 / |mmdp-67204ev-50mq | | | | | | 5962-8956804vyc | 2 / |smdp-67204ev-50sv | | | | | | 5962-8956804qtc |f7400 |mmcp-67204ev-50mq | | | | | | 5962-8956804vtc |f7400 |smcp-67204ev-50sv | | | | | | 5962-8956804qnc |f7400 |mmdp-67204ev-50mq | | | | | | 5962-8956804vnc |f7400 |smdp-67204ev-50sv | | | | | see footnote at end of list. 1 of 3
standardized military drawing source approval bulletin - continued. | | | | | standardized |vendor | vendor | | military drawing | cage | similar | | pin 1 / |number | pin 3 / | | | 2/ | | | 5962-8956805xa | 61772 | idt7204l40db | | | 2 / | mm1i-67204-35mb | | | 2 / | am7204a-40bxa | | | | | | 5962-8956805ua | 61772 | idt7204l40tdb | | | | | | 5962-8956805ya | 61772 | idt7204l40xeb | | | | | | 5962-8956805za | 61772 | idt7204l40lb | | | 2 / | mm4j-67204-35mb | | | 2 / | am7204a-40bua | | | | | | 5962-8956805quc | 2 / |mmcp-67204ev-40mq | | | | | | 5962-8956805vuc | 2 / |smcp-67204ev-40sv | | | | | | 5962-8956805qyc | 2 / |mmdp-67204ev-40mq | | | | | | 5962-8956805vyc | 2 / |smdp-67204ev-40sv | | | | | | 5962-8956805qtc |f7400 |mmcp-67204ev-40mq | | | | | | 5962-8956805vtc |f7400 |smcp-67204ev-40sv | | | | | | 5962-8956805qnc |f7400 |mmdp-67204ev-40mq | | | | | | 5962-8956805vnc |f7400 |smdp-67204ev-40sv | | | | | | 5962-8956806xa | 61772 | idt7204l30db | | | | | | 5962-8956806ya | 61772 | idt7204l30xeb | | | | | | 5962-8956806za | 61772 | idt7204l30lb | | | | | | 5962-8956806ua | 61772 | idt7204l30tdb | | | | | | 5962-8956806quc | 2 / |mmcp-67204fv-30mq | | | | | | 5962-8956806vuc | 2 / |smcp-67204fv-30sv | | | | | | 5962-8956806qyc | 2 / |mmdp-67204fv-30mq | | | | | | 5962-8956806vyc | 2 / |smdp-67204fv-30sv | | | | | | 5962-8956806qtc |f7400 |mmcp-67204fv-30mq | | | | | | 5962-8956806vtc |f7400 |smcp-67204fv-30sv | | | | | | 5962d8956806vtc |f7400 |s mcp-67204fv-30sr | | | | | | 5962-8956806qnc |f7400 |mmdp-67204fv-30mq | | | | | | 5962-8956806vnc |f7400 |smdp-67204fv-30sv | | | | | | 5962d8956806vnc |f7400 |s mdp-67204fv-30sr | | | | | see footnote at end of list. 2 of 3
standardized military drawing source approval bulletin - continued. | | | | | standardized |vendor | vendor | | military drawing | cage | similar | | pin 1 / |number | pin 3 / | | | 2/ | | | 5962-8956807xa | 61772 | idt7204l20db | | | | | | 5962-8956807ya | 61772 | idt7204l20xeb | | | | | | 5962-8956807za | 61772 | idt7204l20lb | | | | | | 5962-8956807ua | 61772 | idt7204l20tdb | | | | | | 5962-8956808quc | 2 / |mmcp-67204fv-15mq | | | | | | 5962-8956808vuc | 2 / |smcp-67204fv-15sv | | | | | | 5962-8956808qyc | 2 / |mmdp-67204fv-15mq | | | | | | 5962-8956808vyc | 2 / |smdp-67204fv-15sv | | | | | | 5962-8956808qtc |f7400 |mmcp-67204fv-15mq | | | | | | 5962-8956808vtc |f7400 |smcp-67204fv-15sv | | | | | | 5962d8956808vtc |f7400 |s mcp-67204fv-15sr | | | | | | 5962-8956808qnc |f7400 |mmdp-67204fv-15mq | | | | | | 5962-8956808vnc |f7400 |smdp-67204fv-15sv | | | | | | 5962d8956808vnc |f7400 |s mdp-67204fv-15sr | | | | | 1 / the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for the part. if the desired lead finish is not listed, contact the vendor to determine its availability. 2 / no longer available from an approved source. 3 / caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. vendor cage vendor name number and address 61772 integrated device technology, incorporated 2975 stender way santa clara, ca 95054-8015 f7400 atmel nantes la chantrerie bp 70602 44306 nantes cedex 03 france the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in this information bulletin. 3 of 3

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