AO4932 fet1(n-channel) fet2(n-channel) v ds = 30v 30v i d = 11a (v gs =10v) 8a (v gs =10v) r ds(on) r ds(on) < 12.5m (v gs =10v) < 19m (vgs=10v) < 15m (v gs =4.5v) < 23m (vgs=4.5v) the AO4932 uses advanced trench technology to provi de excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combination for use in dc-dc converters. a monolithically integrated schottky diode in paralle l with the synchronous mosfet to boost efficiency further. g1 d2 d2 s2/d1 s2/d1 g2 top view srfet tm s oft r ecovery mos fet : integrated schottky diode d2 d1 symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 32 40 74 90 r q ja 48 maximum junction-to-ambient a 62.5 c/w thermal characteristics parameter typ max units c a mj avalanche energy l=0.1mh c -55 to 150 t a =70c 11 junction and storage temperature range power dissipation b 2 1.3 p d t a =25c 1.3 18 2 30 8 a 20 v 6.5 40 19 w v 12 absolute maximum ratings t a =25c unless otherwise noted max fe1 drain-source voltage 30 max fet2 gate-source voltage units parameter pulsed drain current c continuous drain current avalanche current c 11 i d t a =25c t a =70c 9 60 15 s1 g1 s2/d1 s2/d1 g2 s2 g1 s1 www.freescale.net.cn 1/9 asymmetric dual n-channel mosfet general description features
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.5 t j =125c 500 i gss 100 na v gs(th) gate threshold voltage 1.1 1.65 2.1 v i d(on) 60 a 10 12.5 t j =125c 15 18 12 15 m w g fs 75 s v sd 0.4 0.7 v i s 4 a c iss 930 1170 1400 pf c oss 90 128 170 pf c rss 45 89 125 pf r g 0.7 1.4 2.1 w q g (10v) 16 20 24 nc q g (4.5v) 7 8.7 10.5 nc q gs 3.2 nc q gd 3 nc t d(on) 6 ns turn-on delaytime switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz output capacitance v ds =0v, v gs = 12v v ds =v gs i d =250 m a input capacitance total gate charge v gs =10v, v ds =15v, i d =11a gate source charge gate drain charge total gate charge fet1 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions dynamic parameters v gs =10v, v ds =5v v gs =10v, i d =11a m w v gs =4.5v, i d =9a r ds(on) static drain-source on-resistance maximum body-diode + schottky continuous current drain-source breakdown voltage on state drain current i s =1a,v gs =0v v ds =5v, i d =11a ma i dss zero gate voltage drain current i d =1ma, v gs =0v v gs =0v, v ds =15v, f=1mhz reverse transfer capacitance gate-body leakage current forward transconductance diode forward voltage t r 2.4 ns t d(off) 23 ns t f 4 ns t rr 5.5 7 8.5 ns q rr 5 6.5 8 nc body diode reverse recovery charge i f =11a, di/dt=500a/ m s turn-off fall time turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.4 w , r gen =3 w i f =11a, di/dt=500a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user's spec ific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. www.freescale.net.cn 2/9 AO4932 asymmetric dual n-channel mosfet
fet1: typical electrical and thermal characteristic s 17 5 2 10 0 18 0 5 10 15 20 25 30 35 1.5 1.8 2.1 2.4 2.7 3 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 6 8 10 12 14 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =4.5v i d =9a v gs =10v i d =11a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 25 30 35 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.25v 2.5v 10v 2.75v 4.5v 3v 18 40 voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 4: on - resistance vs. junction temperature (note e) 5 10 15 20 25 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =11a 25 c 125 c www.freescale.net.cn 3/9 AO4932 asymmetric dual n-channel mosfet
fet1: typical electrical and thermal characteristic s 0 2 4 6 8 10 0 5 10 15 20 25 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 300 600 900 1200 1500 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =11a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms figure 10: single pulse power rating junction - to-ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note f) in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90 c/w t on t p d www.freescale.net.cn 4/9 AO4932 asymmetric dual n-channel mosfet
fet1: typical electrical and thermal characteristic s 0 2 4 6 8 10 12 0 2 4 6 8 10 12 0 5 10 15 20 25 30 i rm (a) q rr (nc) i s (a) di/dt=800a/ m s 125oc 125oc 25oc 25oc q rr i rm 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 0 5 10 15 20 25 30 s t rr (ns) i s (a) di/dt=800a/ m s 125oc 125oc 25oc 25oc t rr s 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 0 50 100 150 200 i r (a) temperature (c) figure 12: diode reverse leakage current vs. junction temperature v ds =15v v ds =30v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 50 100 150 200 v sd (v) temperature (c) figure 13: diode forward voltage vs. junction temperature i s =1a 10a 20a 5a 40 i s (a) figure 14: diode reverse recovery charge and peak current vs. conduction current 0 2 4 6 8 10 0 2 4 6 8 10 0 200 400 600 800 1000 i rm (a) q rr (nc) di/dt (a/ m mm m s) figure 16: diode reverse recovery charge and peak current vs. di/dt 125oc 125oc 25oc 25oc i s =20a q rr i rm i s (a) figure 15: diode reverse recovery time and softness factor vs. conduction current 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 0 200 400 600 800 1000 s t rr (ns) di/dt (a/ m mm m s) figure 17: diode reverse recovery time and softness factor vs. di/dt 125oc 25oc 25oc 125oc i s =20a t rr s www.freescale.net.cn 5/9 AO4932 asymmetric dual n-channel mosfet
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 1.2 1.8 2.4 v i d(on) 40 a 15.5 19 t j =125c 21 25 18.6 23 m w g fs 30 s v sd 0.75 1 v i s 2.5 a c iss 600 740 888 pf c oss 77 110 145 pf c rss 50 82 115 pf r g 0.5 1.1 1.7 w q g (10v) 12 15 18 nc q g (4.5v) 6 7.5 9 nc q gs 2 2.5 3 nc q gd 2 3 5 nc t d(on) 5 ns t r 3.5 ns on state drain current output capacitance fet2 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions r ds(on) i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 16v zero gate voltage drain current m w v gs =4.5v, i d =4a drain-source breakdown voltage i d =250 m a, v gs =0v static drain-source on-resistance i s =1a,v gs =0v maximum body-diode continuous current input capacitance diode forward voltage dynamic parameters v gs =10v, v ds =5v v gs =10v, i d =8a gate-body leakage current switching parameters gate drain charge total gate charge reverse transfer capacitance v gs =0v, v ds =0v, f=1mhz gate resistance total gate charge v gs =10v, v ds =15v, i d =8a gate source charge v ds =5v, i d =8a v gs =0v, v ds =15v, f=1mhz forward transconductance turn-on delaytime turn-on rise time v gs =10v, v ds =15v, r l =1.8 w , t r 3.5 ns t d(off) 19 ns t f 3.5 ns t rr 6 8 10 ns q rr 14 18 22 nc turn-on rise time body diode reverse recovery charge i f =8a, di/dt=500a/ m s turn-off delaytime i f =8a, di/dt=500a/ m s v gs =10v, v ds =15v, r l =1.8 w , r gen =3 w body diode reverse recovery time turn-off fall time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environm ent with t a =25 c. the value in any given application depends on the user's specific bo ard design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junctio n temperature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction to le ad r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtaine d using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient the rmal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. www.freescale.net.cn 6/9 AO4932 asymmetric dual n-channel mosfet
fet2: typical electrical and thermal characteristic s 17 5 2 10 0 18 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 0 5 10 15 20 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =4.5v i d =4a v gs =10v i d =8a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3v 10v 3.5v 4v 5v 18 40 voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 4: on - resistance vs. junction temperature (note e) 10 15 20 25 30 35 40 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =8a 25 c 125 c www.freescale.net.cn 7/9 AO4932 asymmetric dual n-channel mosfet
p-channel: typical electrical and thermal characteri stics 0 2 4 6 8 10 0 3 6 9 12 15 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =8a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe 10 m s 10s 1ms dc r ds(on) t j(max) =150 c t a =25 c 100 m s 10ms figure 10: single pulse power rating junction - to-ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note f) in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90 c/w t on t p d www.freescale.net.cn 8/9 AO4932 asymmetric dual n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & w aveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & w aveforms t t r d(on) t on t d(off) t f t off l vds bv unclamped inductive switching (uis) test circuit & w aveforms vds dss 2 e = 1/2 li ar ar vdd vgs id vgs rg dut - + vdc vgs vds id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr www.freescale.net.cn 9/9 AO4932 asymmetric dual n-channel mosfet
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