unisonic technologies co., ltd ut136n03 preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2010 unisonic technologies co., ltd qw-r502-459.a n-channel enhancement mode ? description the ut136n03 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * v ds (v)= 30 v * i d =136 a * r ds(on) = 4.5m ? @v gs =10 v * r ds(on) = 5.6m ? @v gs =4.5 v ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing ut136n03l-ta3-r UT136N03G-TA3-T to-220 g d s tube ut136n03l-tq2-t ut136n03g-tq2-t to-263 g d s tube ut136n03l-tq2-r ut136n03g-tq2-r to-263 g d s tape reel
ut136n03 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-459.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current i d 136 a pulsed drain current (note1) i dm 400 a single pulsed avalanche energy (note4) e as 875 mj power dissipation p d 100 w junction temperature t j +175 c storage temperature t stg -55 ~ +175 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are st ress ratings only and functional device operation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 1.4 c/w ? electrical characteristics (t j =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250 a 30 v drain-source leakage current i dss v ds =30 v,v gs =0 v 1 a gate-source leakage current i gss v ds =0 v, v gs = 20 v 100 na on characteristics (note2) gate threshold voltage v gs(th) v ds =v gs , i d =250 a 1 3 v v gs =10 v, i d =40 a 3.6 4.5 static drain-source on-resistance r ds(on) v gs =4.5 v, i d =40 a 5.6 m ? dynamic parameters (note3) input capacitance c iss 3800 output capacitance c oss 800 reverse transfer capacitance c rss v ds =15v, v gs =0v, f=1.0mhz 600 pf switching parameters (note3) total gate charge q g 60 72 gate source charge q gs 20.8 gate drain charge q gd v ds =15v, v gs =5v, i d =16a 22 nc turn-on delay time t d(on) 25.7 50 turn-on rise time t r 10 20 turn-off delay time t d(off) 128 200 turn-off fall-time t f v dd =15v, i d =1a, r gen =6 ? v gs =10 v 34 70 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =20 a,v gs =0 v 1.5 v drain-source diode forward current i s 90 a note : 1. pulse width limited by maximum junction temperature 2. pulse test : pulse width < 300 s, duty cycle < 2%. 3. guaranteed by design, not s ubject to production testing. 4. l = 0.5mh, i as = 35a, v dd = 25v, r g = 25 ? , starting t j = 25c.
ut136n03 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-459.a ? test circuit and waveform utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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