55GN01NA no. a1116-1/6 features high cutoff frequency : f t = 5.5ghz typ. high gain : ? s21e ? 2 =7db typ (f=1ghz). =13db typ (f=400mhz). specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo 20 v collector-to-emitter voltage v ceo 10 v emitter-to-base voltage v ebo 3v collector current i c 70 ma collector dissipation p c 400 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =10v, i e =0a 0.1 a emitter cutoff current i ebo v eb =2v, i c =0a 1 a dc current gain h fe v ce =5v, i c =10ma 100 180 gain-bandwidth product f t v ce =5v, i c =20ma 3.5 5.5 ghz output capacitance cob v cb =10v, f=1mhz 1.2 1.4 pf reverse transfer capacitance cre v cb =10v, f=1mhz 0.8 pf marking : zd continued on next page. sanyo semiconductors data sheet www.semiconductor-sanyo.com/network ordering number : ena1116 42809ab ms im tc-00001957 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 55GN01NA npn epitaxial planar silicon transistor uhf wide-band low-noise amplifier applications
55GN01NA no. a1116-2/6 012345678910 0 5 10 15 20 25 30 35 40 45 50 collector-to-emitter voltage, v ce -- v collector current, i c -- ma i c -- v ce it06252 i b =0 ma 0.30ma 0.25ma 0.20ma 0.15ma 0.10ma 0.05ma 0 0.2 0.4 0.6 0.8 1.0 1.2 0 80 70 60 50 40 30 20 10 base-to-emitter voltage, v be -- v collector current, i c -- ma it06253 i c -- v be v ce =5v continued from preceding page. ratings parameter symbol conditions min typ max unit forward transfer gain ? s21e ? 2 1v ce =5v, i c =20ma, f=1ghz 5 7 db ? s21e ? 2 2v ce =5v, i c =20ma, f=400mhz 10 13 db noise figure nf v ce =3v, i c =5ma, f=1ghz, z s =z l =50 1.9 db package dimensions unit : mm (typ) 7522-003 123 5.0 4.0 4.0 0.45 0.45 0.44 0.5 1.3 1.3 5.0 0.6 2.0 14.0 1 : base 2 : emitter 3 : collector sanyo : np
55GN01NA no. a1116-3/6 0 20 40 60 80 100 120 140 160 0 50 100 150 200 250 300 350 400 450 it07410 collector dissipation, p c -- mw p c -- ta ambient temperature, ta -- c collector current, i c -- ma 1.0 23 57 23 57 10 100 ? s21e ? 2 -- i c forward transfer gain, ? s21e ? 2 -- db it07407 cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf it07408 cre -- v cb collector-to-base voltage, v cb -- v reverse transfer capacitance, cre -- pf it07409 1.0 1.5 3.0 2.0 2.5 1.0 23 57 10 nf -- i c collector current, i c -- ma noise figure, nf -- db it05674 v ce =3v f=1ghz zo=50 0.1 23 57 1.0 23 23 55 7 10 5 7 2 5 3 1.0 f=1mhz 0.1 23 57 1.0 23 23 57 10 2 4 16 12 14 6 8 10 v ce =5v f=1ghz f=400mhz 5 7 5 3 1.0 2 f=1mhz h fe -- i c collector current, i c -- ma dc current gain, h fe it06254 1.0 5 7 10 2 3 1.0 23 57 23 57 10 100 f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- ghz it07406 v ce =5v 100 2 7 5 3 1.0 357 2357 10 23 57 100 v ce =5v
55GN01NA no. a1116-4/6 s parameters (common emitter) v ce =5v, i c =1ma, z o =50 freq(mhz) ? s 11 ? s 11 ? s 21 ? s 21 ? s 12 ? s 12 ? s 22 ? s 22 100 0.943 --21.54 3.196 157.89 0.049 75.41 0.976 --12.26 200 0.859 --42.64 3.033 137.45 0.089 62.59 0.918 --23.34 400 0.621 --84.31 2.581 101.05 0.141 42.68 0.765 --40.98 600 0.398 --128.72 2.188 70.15 0.163 34.48 0.643 --53.98 800 0.293 175.87 1.845 43.99 0.186 31.55 0.557 --67.68 1000 0.321 128.34 1.586 21.39 0.224 30.55 0.476 --85.66 1200 0.412 98.48 1.387 1.15 0.286 25.00 0.402 --111.30 1400 0.506 79.14 1.203 --17.54 0.360 14.93 0.338 --149.61 1600 0.608 63.42 1.041 --34.64 0.428 1.54 0.338 162.40 1800 0.682 49.93 0.880 --48.35 0.479 --13.03 0.409 121.17 2000 0.730 37.12 0.746 --59.47 0.510 --27.54 0.507 91.78 v ce =5v, i c =3ma, z o =50 freq(mhz) ? s 11 ? s 11 ? s 21 ? s 21 ? s 12 ? s 12 ? s 22 ? s 22 100 0.804 --32.40 8.238 142.84 0.045 73.04 0.893 --19.66 200 0.585 --55.65 6.453 116.32 0.073 62.58 0.746 --30.06 400 0.290 --84.97 4.082 82.70 0.123 54.56 0.584 --41.23 600 0.130 --115.59 2.993 59.77 0.168 48.90 0.499 --51.80 800 0.085 161.69 2.401 40.03 0.223 40.68 0.418 --66.00 1000 0.175 112.07 2.029 21.35 0.280 31.13 0.324 --84.62 1200 0.293 91.78 1.768 3.22 0.336 20.03 0.227 --112.98 1400 0.412 77.04 1.538 --14.06 0.389 7.76 0.157 --164.54 1600 0.531 63.46 1.337 --30.59 0.433 --5.27 0.199 134.30 1800 0.621 50.74 1.147 --45.02 0.466 --17.84 0.303 100.00 2000 0.685 38.34 0.990 --57.83 0.491 --30.60 0.411 79.31 v ce =5v, i c =5ma, z o =50 freq(mhz) ? s 11 ? s 11 ? s 21 ? s 21 ? s 12 ? s 12 ? s 22 ? s 22 100 0.682 --38.10 11.302 132.99 0.040 71.69 0.817 --22.99 200 0.442 --56.42 7.763 106.10 0.068 65.81 0.660 --30.32 400 0.208 --71.35 4.460 77.25 0.121 59.57 0.531 --39.30 600 0.088 --86.87 3.190 57.12 0.176 52.06 0.459 --50.11 800 0.034 149.18 2.542 39.04 0.235 42.45 0.378 --65.34 1000 0.140 104.71 2.150 21.30 0.295 30.94 0.279 --84.88 1200 0.266 89.28 1.863 3.90 0.350 18.79 0.177 --116.24 1400 0.390 75.83 1.622 --12.95 0.401 5.97 0.121 179.23 1600 0.510 63.13 1.413 --28.93 0.438 --6.84 0.192 118.31 1800 0.602 50.55 1.219 --43.09 0.467 --19.34 0.299 90.37 2000 0.668 38.16 1.055 --55.85 0.490 --31.84 0.403 72.89 v ce =5v, i c =10ma, z o =50 freq(mhz) ? s 11 ? s 11 ? s 21 ? s 21 ? s 12 ? s 12 ? s 22 ? s 22 100 0.485 --41.64 15.144 118.22 0.036 72.52 0.696 --25.07 200 0.302 --47.04 8.855 95.57 0.063 71.31 0.571 --27.92 400 0.173 --47.23 4.759 72.34 0.123 63.65 0.483 --36.07 600 0.093 --47.78 3.367 54.88 0.184 54.28 0.422 --48.07 800 0.016 30.84 2.673 38.26 0.246 42.91 0.342 --64.25 1000 0.113 95.22 2.252 21.35 0.309 30.98 0.237 --85.29 1200 0.241 86.37 1.949 4.47 0.363 17.56 0.132 --122.60 1400 0.369 74.46 1.689 --11.79 0.410 4.53 0.105 153.44 1600 0.493 62.03 1.477 --27.39 0.444 --8.58 0.202 103.83 1800 0.588 50.01 1.273 --40.99 0.468 --21.13 0.313 81.36 2000 0.656 37.87 1.111 --53.67 0.489 --33.27 0.409 66.66
55GN01NA no. a1116-5/6 s parameters (common emitter) v ce =5v, i c =15ma, z o =50 freq(mhz) ? s 11 ? s 11 ? s 21 ? s 21 ? s 12 ? s 12 ? s 22 ? s 22 100 0.393 --39.40 16.513 111.47 0.034 76.73 0.638 --24.75 200 0.262 --38.91 9.160 91.74 0.063 73.11 0.540 --25.92 400 0.173 --37.43 4.855 70.51 0.125 65.36 0.468 --34.48 600 0.104 --38.16 3.423 54.12 0.187 55.16 0.409 --47.14 800 0.028 7.07 2.718 37.90 0.252 43.45 0.329 --63.84 1000 0.106 91.07 2.289 21.31 0.314 30.76 0.221 --85.01 1200 0.234 85.64 1.977 4.65 0.369 17.31 0.117 --126.09 1400 0.364 74.15 1.712 --11.33 0.414 3.76 0.106 143.44 1600 0.488 61.92 1.493 --26.87 0.447 --9.20 0.213 99.23 1800 0.582 49.99 1.298 --40.45 0.470 --21.60 0.321 78.78 2000 0.651 37.88 1.128 --52.86 0.488 --33.58 0.415 64.58 v ce =5v, i c =20ma, z o =50 freq(mhz) ? s 11 ? s 11 ? s 21 ? s 21 ? s 12 ? s 12 ? s 22 ? s 22 100 0.346 --36.01 17.139 107.73 0.033 76.49 0.608 --23.92 200 0.246 --33.91 9.298 89.56 0.063 75.27 0.526 --24.72 400 0.173 --32.88 4.887 69.69 0.125 66.04 0.463 --33.79 600 0.108 --33.77 3.442 53.42 0.189 55.58 0.403 --46.59 800 0.034 7.28 2.732 37.56 0.255 43.56 0.321 --63.41 1000 0.104 89.49 2.301 21.18 0.315 30.73 0.213 --85.68 1200 0.232 85.18 1.991 4.67 0.371 17.24 0.110 --127.83 1400 0.363 73.90 1.721 --11.37 0.413 3.77 0.107 139.24 1600 0.486 61.86 1.504 --26.71 0.447 --9.38 0.216 97.22 1800 0.582 49.85 1.298 --40.20 0.469 --21.77 0.324 77.62 2000 0.652 37.81 1.132 --52.56 0.488 --33.82 0.417 63.99 v ce =5v, i c =30ma, z o =50 freq(mhz) ? s 11 ? s 11 ? s 21 ? s 21 ? s 12 ? s 12 ? s 22 ? s 22 100 0.293 --31.14 17.643 103.73 0.033 80.19 0.576 --22.37 200 0.228 --27.21 9.367 87.38 0.063 75.47 0.511 --23.14 400 0.169 --27.83 4.896 68.61 0.125 66.51 0.455 --32.68 600 0.107 --29.09 3.448 52.73 0.190 55.90 0.397 --45.90 800 0.039 15.22 2.739 36.98 0.255 43.60 0.316 --62.93 1000 0.110 88.31 2.302 20.77 0.316 30.46 0.206 --85.04 1200 0.238 84.51 1.989 4.29 0.371 17.10 0.102 --127.75 1400 0.367 73.61 1.719 --11.62 0.415 3.59 0.106 134.87 1600 0.491 61.74 1.503 --26.98 0.448 --9.46 0.219 95.38 1800 0.584 49.63 1.295 --40.37 0.470 --21.95 0.327 76.66 2000 0.654 37.73 1.133 --52.81 0.488 --33.87 0.418 62.92 v ce =5v, i c =50ma, z o =50 freq(mhz) ? s 11 ? s 11 ? s 21 ? s 21 ? s 12 ? s 12 ? s 22 ? s 22 100 0.234 --26.34 17.554 100.28 0.033 79.67 0.552 --20.20 200 0.190 --22.28 9.191 85.28 0.063 77.35 0.504 --21.25 400 0.141 --22.30 4.777 67.06 0.126 66.81 0.454 --31.75 600 0.085 --19.60 3.367 51.37 0.189 55.97 0.397 --45.02 800 0.045 52.54 2.670 35.54 0.255 43.62 0.315 --62.21 1000 0.136 89.35 2.250 19.09 0.317 30.77 0.206 --83.77 1200 0.261 83.49 1.943 2.65 0.371 17.07 0.101 --126.95 1400 0.390 72.58 1.678 --13.25 0.413 3.62 0.102 135.16 1600 0.510 60.71 1.460 --28.69 0.448 --9.60 0.217 95.69 1800 0.600 48.78 1.265 --42.00 0.469 --21.99 0.323 76.16 2000 0.667 37.06 1.104 --54.45 0.489 --34.03 0.415 63.17
55GN01NA no. a1116-6/6 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party?s intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of april, 2009. specifications and information herein are subject to change without notice.
|
