1998. 6. 15 1/1 semiconductor technical data BFQ31 epitaxial planar npn transistor revision no : 1 high frequency application. vhf band amplifier application. maximum rating (ta=25 1 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 3 v collector current i c 100 ma emitter current i e -100 ma collector power dissipation p c 200 mw junction temperature t j 150 1 storage temperature range t stg -65 150 1 characteristic symbol test condition min. typ. max. unit collector-emitter breakdown voltage v (br)ceo i c =3ma, i b =0 15 - - v collector-base breakdown voltage v (br)cbo i c =1 a, i e =0 30 - - v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 3.0 - - v collector cut-off current i cbo v cb =15v, i e =0 - - 10 na dc current gain h fe v ce =1v, i c =3ma 20 - - base-emitter saturation voltage v be(sat) i c =10ma, i b =1ma - - 1.0 v collector-emitter saturation voltage v ce(sat) i c =10ma, i b =1ma - - 0.4 v transition frequency f t i c =4ma, v ce =10v, f=100mhz 600 - - mhz collector input capacitance c ib v eb =0.5v, i c =0, f=1mhz - - 2.0 pf collector output capacitance c ob v cb =0v, i e =0, f=1mhz - - 3.0 pf v cb =10v, i e =0, f=1mhz - - 1.7 noise figure nf v ce =6v, i c =1ma, rg=400 u , f=60mhz - - 6.0 db type name marking lot no. s2
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